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Title: Bismuth interstitial impurities and the optical properties of GaP 1- x - yBi xN y

Abstract

Two distinctive regimes of behavior are observed from GaP 1-x-y Bi x N y alloys with x < 2.4%, y < 3.4% grown by molecular beam epitaxy. These regimes are correlated with abundant bismuth interstitial impurities that are encouraged or suppressed according to the sample growth temperature, with up to 55% of incorporated bismuth located interstitially. When bismuth interstitials are present, radiative recombination arises at near-band-edge localized states rather than from impurity bands and deep state luminescence. Finally, this change demonstrates a novel strategy for controlling luminescence in isoelectronic semiconductor alloys and is attributed to a disruption of carrier transfer processes.

Authors:
 [1];  [2];  [2];  [2];  [2];  [2]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1409005
Report Number(s):
NREL/JA-5K00-70115
Journal ID: ISSN 0021-4922
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Japanese Journal of Applied Physics
Additional Journal Information:
Journal Volume: 56; Journal Issue: 11; Journal ID: ISSN 0021-4922
Publisher:
Japan Society of Applied Physics
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; SEMICONDUCTORS; IMPURITIES; BISMIDE

Citation Formats

Christian, Theresa M., Beaton, Daniel A., Perkins, John D., Fluegel, Brian, Alberi, Kirstin, and Mascarenhas, Angelo. Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy. United States: N. p., 2017. Web. doi:10.7567/JJAP.56.111201.
Christian, Theresa M., Beaton, Daniel A., Perkins, John D., Fluegel, Brian, Alberi, Kirstin, & Mascarenhas, Angelo. Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy. United States. doi:10.7567/JJAP.56.111201.
Christian, Theresa M., Beaton, Daniel A., Perkins, John D., Fluegel, Brian, Alberi, Kirstin, and Mascarenhas, Angelo. Tue . "Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy". United States. doi:10.7567/JJAP.56.111201. https://www.osti.gov/servlets/purl/1409005.
@article{osti_1409005,
title = {Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy},
author = {Christian, Theresa M. and Beaton, Daniel A. and Perkins, John D. and Fluegel, Brian and Alberi, Kirstin and Mascarenhas, Angelo},
abstractNote = {Two distinctive regimes of behavior are observed from GaP1-x-y Bi x N y alloys with x < 2.4%, y < 3.4% grown by molecular beam epitaxy. These regimes are correlated with abundant bismuth interstitial impurities that are encouraged or suppressed according to the sample growth temperature, with up to 55% of incorporated bismuth located interstitially. When bismuth interstitials are present, radiative recombination arises at near-band-edge localized states rather than from impurity bands and deep state luminescence. Finally, this change demonstrates a novel strategy for controlling luminescence in isoelectronic semiconductor alloys and is attributed to a disruption of carrier transfer processes.},
doi = {10.7567/JJAP.56.111201},
journal = {Japanese Journal of Applied Physics},
number = 11,
volume = 56,
place = {United States},
year = {2017},
month = {10}
}

Journal Article:
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Cited by: 1 work
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