Bismuth interstitial impurities and the optical properties of GaP_{1-x -y}Bi_xN_y

Journal Article · 10 October 2017 · Japanese Journal of Applied Physics

DOI: https://doi.org/10.7567/JJAP.56.111201 · OSTI ID:1409005

Christian, Theresa M. ^[1]; Beaton, Daniel A. ^[2]; Perkins, John D. ^[2]; Fluegel, Brian ^[2]; Alberi, Kirstin ^[2]; Mascarenhas, Angelo ^[2]

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1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
2. National Renewable Energy Lab. (NREL), Golden, CO (United States)

Two distinctive regimes of behavior are observed from GaP_1-x-y Bi _x N _y alloys with x < 2.4%, y < 3.4% grown by molecular beam epitaxy. These regimes are correlated with abundant bismuth interstitial impurities that are encouraged or suppressed according to the sample growth temperature, with up to 55% of incorporated bismuth located interstitially. When bismuth interstitials are present, radiative recombination arises at near-band-edge localized states rather than from impurity bands and deep state luminescence. Finally, this change demonstrates a novel strategy for controlling luminescence in isoelectronic semiconductor alloys and is attributed to a disruption of carrier transfer processes.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• Grant/Contract Number: AC36-08GO28308
• OSTI ID: 1409005
• Report Number(s): NREL/JA-5K00-70115
• Journal Information: Japanese Journal of Applied Physics, Vol. 56, Issue 11; ISSN 0021-4922
• Publisher: Japan Society of Applied PhysicsCopyright Statement
• Country of Publication: United States
• Language: English