Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy

Christian, Theresa M.; Beaton, Daniel A.; Perkins, John D.; Fluegel, Brian; Alberi, Kirstin; Mascarenhas, Angelo

doi:10.7567/JJAP.56.111201

Title: Bismuth interstitial impurities and the optical properties of GaP_1-_x _-_yBi_xN_y

Full Record
Other Related Research

Abstract

Two distinctive regimes of behavior are observed from GaP_1-x-yBi _x N _y alloys with x < 2.4%, y < 3.4% grown by molecular beam epitaxy. These regimes are correlated with abundant bismuth interstitial impurities that are encouraged or suppressed according to the sample growth temperature, with up to 55% of incorporated bismuth located interstitially. When bismuth interstitials are present, radiative recombination arises at near-band-edge localized states rather than from impurity bands and deep state luminescence. Finally, this change demonstrates a novel strategy for controlling luminescence in isoelectronic semiconductor alloys and is attributed to a disruption of carrier transfer processes.

Authors:

Christian, Theresa M. ^[1]; Beaton, Daniel A. ^[2]; Perkins, John D. ^[2]; Fluegel, Brian ^[2]; Alberi, Kirstin ^[2]; Mascarenhas, Angelo ^[2]

National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: 2017-10-10

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1409005

Report Number(s):: NREL/JA-5K00-70115
Journal ID: ISSN 0021-4922

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Japanese Journal of Applied Physics

Additional Journal Information:: Journal Volume: 56; Journal Issue: 11; Journal ID: ISSN 0021-4922

Publisher:: Japan Society of Applied Physics

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; SEMICONDUCTORS; IMPURITIES; BISMIDE

Citation Formats


                    Christian, Theresa M., Beaton, Daniel A., Perkins, John D., Fluegel, Brian, Alberi, Kirstin, and Mascarenhas, Angelo. Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy.  United States: N. p., 2017. 
Web.  doi:10.7567/JJAP.56.111201.

Copy to clipboard


                    Christian, Theresa M., Beaton, Daniel A., Perkins, John D., Fluegel, Brian, Alberi, Kirstin, & Mascarenhas, Angelo. Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy.  United States.  https://doi.org/10.7567/JJAP.56.111201

Copy to clipboard


                    Christian, Theresa M., Beaton, Daniel A., Perkins, John D., Fluegel, Brian, Alberi, Kirstin, and Mascarenhas, Angelo. Tue .  
"Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy".  United States.  https://doi.org/10.7567/JJAP.56.111201.  https://www.osti.gov/servlets/purl/1409005.

Copy to clipboard


                    
@article{osti_1409005,

  title        = {Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy},

  author       = {Christian, Theresa M. and Beaton, Daniel A. and Perkins, John D. and Fluegel, Brian and Alberi, Kirstin and Mascarenhas, Angelo},

  abstractNote = {Two distinctive regimes of behavior are observed from GaP1-x-y Bi x N y alloys with x < 2.4%, y < 3.4% grown by molecular beam epitaxy. These regimes are correlated with abundant bismuth interstitial impurities that are encouraged or suppressed according to the sample growth temperature, with up to 55% of incorporated bismuth located interstitially. When bismuth interstitials are present, radiative recombination arises at near-band-edge localized states rather than from impurity bands and deep state luminescence. Finally, this change demonstrates a novel strategy for controlling luminescence in isoelectronic semiconductor alloys and is attributed to a disruption of carrier transfer processes.},

  doi          = {10.7567/JJAP.56.111201},

  journal      = {Japanese Journal of Applied Physics},

  number       = 11,

  volume       = 56,

  place        = {United States},

  year         = {2017},

  month        = {10}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.7567/JJAP.56.111201

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 2 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Bismuth-induced Raman modes in GaP_1–_xBi_x

Journal Article Christian, Theresa M. ; Fluegel, Brian ; Beaton, Daniel A. ; ... - Japanese Journal of Applied Physics

Here, dilute bismide semiconductor alloys are a promising material platform for optoelectronic devices due to drastic impacts of bismuth on the electronic structure of the alloy. At the same time, the details of bismuth incorporation in the lattice are not fully understood. In this work, we conduct Raman scattering spectroscopy on GaP_{1- x}Bi_x epilayers grown by molecular beam epitaxy (MBE) and identify several bismuth-related Raman features including gap vibration modes at 296, 303, and 314 cm^-1. This study paves the way for more detailed analysis of the local symmetry at bismuth incorporation sites in the dilute bismide alloy regime.
Cited by 8
https://doi.org/10.7567/JJAP.55.108002

Full Text Available
The Effect of Bismuth on the Structural Perfection and the Luminescent Properties of Thin-Film Elastically Stressed Al{sub x}In{sub y}Ga{sub 1–x–y}Bi{sub z}Sb{sub 1–z}/GaSb Heterostructures

Journal Article Alfimova, D. L. ; Lunina, M. L. ; Lunin, L. S., E-mail: lunin-ls@mail.ru ; ... - Physics of the Solid State

The effect of bismuth on the structural perfection and the luminescent properties of Al{sub x}In{sub y}Ga{sub 1–x–y}Bi{sub z}Sb{sub 1–z}/GaSb heterostructures has been studied. The optimal parameters of the process of zone recrystallization with temperature gradient at which epitaxial AlInGaBiSb layers have the minimum roughness and high structural perfection have been revealed: temperature gradient 1 ≤ G ≤ 30 K/cm, the liquid zone thickness 60 ≤ l ≤ 100 μm, the temperature range 773 K ≤ T ≤ 873 K, and bismuth concentration 0.3–0.4 mol fraction.
https://doi.org/10.1134/S1063783418070028
Effects of molecular beam epitaxy growth conditions on composition and optical properties of In{sub x}Ga{sub 1-x}Bi{sub y}As{sub 1-y}

Journal Article Zhong, Y ; Dongmo, P B ; Zide, J M. O. ; ... - Applied Physics Letters

We describe the growth conditions of In{sub x}Ga{sub 1-x}Bi{sub y}As{sub 1-y} (lattice-mismatched and matched) on InP substrates by molecular beam epitaxy and the resulting properties. Due to their anomalously narrow bandgaps and the presence of bismuth, these materials are promising for optoelectronics and thermoelectrics. Low growth temperature and moderate As/Bi beam equivalent pressure ratios are beneficial for Bi incorporation, in good qualitative agreement with GaBi{sub y}As{sub 1-y} on GaAs. Up to 6.75% bismuth is incorporated. High resolution x-ray diffraction and reciprocal space mapping show that In{sub x}Ga{sub 1-x}Bi{sub y}As{sub 1-y} samples exhibit good crystalline quality and zero relaxation. The bandmore »« less
https://doi.org/10.1063/1.3695066
Compositional dependence of the luminescence of In{sub 0.49}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.51}P alloys near the direct{endash}indirect band-gap crossover

Journal Article Nelson, J S ; Jones, E D ; Myers, S M ; ... - Physical Review, B: Condensed Matter

A number of complementary experimental characterization tools and theoretical band structure methods were used to determine unambiguously the band-edge luminescence as a function of Al concentration, and to place an upper limit on the short-wavelength emission of InAlGaP alloys lattice matched to GaAs. In particular, the direct-to-indirect band-gap crossing has been determined by analyzing a series of metalorganic vapor-phase-epitaxy-grown In{sub 0.49}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.51}P alloys lattice matched to GaAs with double-crystal x-ray analysis, Rutherford backscattering spectroscopy, pressure- and temperature-dependent photoluminescence, and transmission electron microscopy. The experimental measurements are compared to first-principles plane-wave pseudopotential band structure calculations for themore »« less
https://doi.org/10.1103/PhysRevB.53.15893
Indirect-to-direct band gap transition in relaxed and strained Ge{sub 1−x−y}Si{sub x}Sn{sub y} ternary alloys

Journal Article Attiaoui, Anis ; Moutanabbir, Oussama - Journal of Applied Physics

Sn-containing group IV semiconductors create the possibility to independently control strain and band gap thus providing a wealth of opportunities to develop an entirely new class of low dimensional systems, heterostructures, and silicon-compatible electronic and optoelectronic devices. With this perspective, this work presents a detailed investigation of the band structure of strained and relaxed Ge{sub 1−x−y}Si{sub x}Sn{sub y} ternary alloys using a semi-empirical second nearest neighbors tight binding method. This method is based on an accurate evaluation of the deformation potential constants of Ge, Si, and α-Sn using a stochastic Monte-Carlo approach as well as a gradient based optimization method.more »« less
https://doi.org/10.1063/1.4889926

Similar Records

Title: Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy

Abstract

Citation Formats

Title: Bismuth interstitial impurities and the optical properties of GaP_1-_x _-_yBi_xN_y