Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy

Christian, Theresa M.; Beaton, Daniel A.; Perkins, John D.; Fluegel, Brian; Alberi, Kirstin; Mascarenhas, Angelo

doi:10.7567/JJAP.56.111201

Title: Bismuth interstitial impurities and the optical properties of GaP_1-_x _-_yBi_xN_y

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Abstract

Two distinctive regimes of behavior are observed from GaP_1-x-yBi _x N _y alloys with x < 2.4%, y < 3.4% grown by molecular beam epitaxy. These regimes are correlated with abundant bismuth interstitial impurities that are encouraged or suppressed according to the sample growth temperature, with up to 55% of incorporated bismuth located interstitially. When bismuth interstitials are present, radiative recombination arises at near-band-edge localized states rather than from impurity bands and deep state luminescence. Finally, this change demonstrates a novel strategy for controlling luminescence in isoelectronic semiconductor alloys and is attributed to a disruption of carrier transfer processes.

Authors:

Christian, Theresa M. ^[1]; Beaton, Daniel A. ^[2]; Perkins, John D. ^[2]; Fluegel, Brian ^[2]; Alberi, Kirstin ^[2]; Mascarenhas, Angelo ^[2]

National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: Tue Oct 10 00:00:00 EDT 2017

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1409005

Report Number(s):: NREL/JA-5K00-70115
Journal ID: ISSN 0021-4922

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Japanese Journal of Applied Physics

Additional Journal Information:: Journal Volume: 56; Journal Issue: 11; Journal ID: ISSN 0021-4922

Publisher:: Japan Society of Applied Physics

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; SEMICONDUCTORS; IMPURITIES; BISMIDE

Citation Formats


                    Christian, Theresa M., Beaton, Daniel A., Perkins, John D., Fluegel, Brian, Alberi, Kirstin, and Mascarenhas, Angelo. Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy.  United States: N. p., 2017. 
Web.  doi:10.7567/JJAP.56.111201.

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                    Christian, Theresa M., Beaton, Daniel A., Perkins, John D., Fluegel, Brian, Alberi, Kirstin, & Mascarenhas, Angelo. Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy.  United States.  https://doi.org/10.7567/JJAP.56.111201

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                    Christian, Theresa M., Beaton, Daniel A., Perkins, John D., Fluegel, Brian, Alberi, Kirstin, and Mascarenhas, Angelo. Tue .  
"Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy".  United States.  https://doi.org/10.7567/JJAP.56.111201.  https://www.osti.gov/servlets/purl/1409005.

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@article{osti_1409005,

  title        = {Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy},

  author       = {Christian, Theresa M. and Beaton, Daniel A. and Perkins, John D. and Fluegel, Brian and Alberi, Kirstin and Mascarenhas, Angelo},

  abstractNote = {Two distinctive regimes of behavior are observed from GaP1-x-y Bi x N y alloys with x < 2.4%, y < 3.4% grown by molecular beam epitaxy. These regimes are correlated with abundant bismuth interstitial impurities that are encouraged or suppressed according to the sample growth temperature, with up to 55% of incorporated bismuth located interstitially. When bismuth interstitials are present, radiative recombination arises at near-band-edge localized states rather than from impurity bands and deep state luminescence. Finally, this change demonstrates a novel strategy for controlling luminescence in isoelectronic semiconductor alloys and is attributed to a disruption of carrier transfer processes.},

  doi          = {10.7567/JJAP.56.111201},

  journal      = {Japanese Journal of Applied Physics},

  number       = 11,

  volume       = 56,

  place        = {United States},

  year         = {Tue Oct 10 00:00:00 EDT 2017},

  month        = {Tue Oct 10 00:00:00 EDT 2017}

}

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Title: Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy

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Title: Bismuth interstitial impurities and the optical properties of GaP_1-_x _-_yBi_xN_y