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Title: Investigation of atomic-layer-deposited TiOx as selective electron and hole contacts to crystalline silicon

Abstract

Here, the applicability of atomic-layer-deposited titanium oxide (TiOx) thin films for the formation of carrier selective contacts to crystalline silicon (c-Si) is investigated. While relatively good electron selectivity was presented recently by other groups, we show that carrier selectivity can be engineered from electron to hole selective depending on the deposition conditions, post deposition annealing and the contact material covering the TiOx layer. For both the electron and hole contacts, an open-circuit voltage (Voc) of ~ >650 mV is obtained. The fact that the Voc is correlated with the (asymmetric) induced c-Si band bending suggests that carrier selectivity is mainly governed by the effective work function and/or the fixed charge rather than by the asymmetric band offsets at the Si/TiOx interface, which provides important insight into the basic function of metal-oxide-based contact systems.

Authors:
 [1];  [2];  [3];  [2];  [2]
  1. Fraunhofer Institute for Solar Energy Systems ISE, Freiburg (Germany); National Institute of Advanced Industrial Science and Technology, Tsukuba (Japan)
  2. Fraunhofer Institute for Solar Energy Systems ISE, Freiburg (Germany)
  3. Fraunhofer Institute for Solar Energy Systems ISE, Freiburg (Germany); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1409004
Report Number(s):
NREL/JA-5J00-70503
Journal ID: ISSN 1876-6102
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Energy Procedia (Online)
Additional Journal Information:
Journal Name: Energy Procedia (Online); Journal Volume: 124; Journal Issue: C; Journal ID: ISSN 1876-6102
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; titanium oxide; atomic layer deposition; crystalline silicon; solar cell; carrier selective contact

Citation Formats

Matsui, Takuya, Bivour, Martin, Ndione, Paul F., Hettich, Paul, and Hermle, Martin. Investigation of atomic-layer-deposited TiOx as selective electron and hole contacts to crystalline silicon. United States: N. p., 2017. Web. https://doi.org/10.1016/j.egypro.2017.09.093.
Matsui, Takuya, Bivour, Martin, Ndione, Paul F., Hettich, Paul, & Hermle, Martin. Investigation of atomic-layer-deposited TiOx as selective electron and hole contacts to crystalline silicon. United States. https://doi.org/10.1016/j.egypro.2017.09.093
Matsui, Takuya, Bivour, Martin, Ndione, Paul F., Hettich, Paul, and Hermle, Martin. Thu . "Investigation of atomic-layer-deposited TiOx as selective electron and hole contacts to crystalline silicon". United States. https://doi.org/10.1016/j.egypro.2017.09.093. https://www.osti.gov/servlets/purl/1409004.
@article{osti_1409004,
title = {Investigation of atomic-layer-deposited TiOx as selective electron and hole contacts to crystalline silicon},
author = {Matsui, Takuya and Bivour, Martin and Ndione, Paul F. and Hettich, Paul and Hermle, Martin},
abstractNote = {Here, the applicability of atomic-layer-deposited titanium oxide (TiOx) thin films for the formation of carrier selective contacts to crystalline silicon (c-Si) is investigated. While relatively good electron selectivity was presented recently by other groups, we show that carrier selectivity can be engineered from electron to hole selective depending on the deposition conditions, post deposition annealing and the contact material covering the TiOx layer. For both the electron and hole contacts, an open-circuit voltage (Voc) of ~ >650 mV is obtained. The fact that the Voc is correlated with the (asymmetric) induced c-Si band bending suggests that carrier selectivity is mainly governed by the effective work function and/or the fixed charge rather than by the asymmetric band offsets at the Si/TiOx interface, which provides important insight into the basic function of metal-oxide-based contact systems.},
doi = {10.1016/j.egypro.2017.09.093},
journal = {Energy Procedia (Online)},
number = C,
volume = 124,
place = {United States},
year = {2017},
month = {9}
}

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Works referencing / citing this record:

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  • DOI: 10.1063/1.5049285

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  • Titova, Valeriya; Schmidt, Jan
  • AIP Advances, Vol. 8, Issue 12
  • DOI: 10.1063/1.5061924