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Title: Sputter-deposited WO x and MoO x for hole selective contacts

Here, reactive sputter deposited tungsten and molybdenum oxide (WO x, MoO x) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films deposited by thermal evaporation, these results demonstrate a good starting point for further optimizations of sputtered WO x and MoO x towards higher work functions to improve the hole selectivity.
Authors:
 [1] ;  [1] ;  [2] ;  [1]
  1. Fraunhofer Institute for Solar Energy Systems ISE, Freiburg (Germany)
  2. Fraunhofer Institute for Solar Energy Systems ISE, Freiburg (Germany); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5J00-70502
Journal ID: ISSN 1876-6102
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
Energy Procedia
Additional Journal Information:
Journal Volume: 124; Journal Issue: C; Journal ID: ISSN 1876-6102
Publisher:
Elsevier
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
German Federal Ministry for Economic Affairs and Energy; USDOE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; metal oxide; work function; induced junction; sputtering
OSTI Identifier:
1408996