Radiation-induced grain subdivision and bubble formation in U3Si2 at LWR temperature
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Idaho National Lab. (INL), Idaho Falls, ID (United States)
- Univ. of Florida, Gainesville, FL (United States)
Here, U3Si2, an advanced fuel form proposed for light water reactors (LWR), has excellent thermal conductivity and a higher fissile element density. However, limited understanding of the radiation performance and fission gas behavior of U3Si2 is available at LWR conditions. This study explores the irradiation behavior of U3Si2 by 300 KeV Xe+ ion beam bombardment combining with in-situ transmission electron microscopy (TEM) observation. The crystal structure of U3Si2 is stable against radiation-induced amorphization at 350 °C even up to a very high dose of 64 displacements per atom (dpa). Grain subdivision of U3Si2 occurs at a relatively low dose of 0.8 dpa and continues to above 48 dpa, leading to the formation of high-density nanoparticles. Nano-sized Xe gas bubbles prevail at a dose of 24 dpa, and Xe bubble coalescence was identified with an increase of irradiation dose. The volumetric swelling resulting from Xe gas bubble formation and coalescence was estimated with respect to radiation dose, and a 2.2% volumetric swelling was observed for U3Si2 irradiated at 64 dpa considering fission gas only. Due to extremely high susceptibility to oxidation, the nano-sized U3Si2 grains upon radiationinduced grain subdivision were oxidized to nanocrystalline UO2 in a high vacuum chamber for TEM observation, eventually leading to the formation of UO2 nanocrystallites up to 80 dpa.
- Research Organization:
- Idaho National Lab. (INL), Idaho Falls, ID (United States)
- Sponsoring Organization:
- USDOE; USDOE Office of Nuclear Energy (NE)
- Grant/Contract Number:
- AC07-05ID14517; NE0008564
- OSTI ID:
- 1408885
- Report Number(s):
- INL/JOU--17-43580; PII: S0022311517309613
- Journal Information:
- Journal of Nuclear Materials, Journal Name: Journal of Nuclear Materials Journal Issue: C Vol. 498; ISSN 0022-3115
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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