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Title: Band bowing and the direct-to-indirect crossover in random BAlN alloys

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1408554
Grant/Contract Number:  
SC0010689
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Name: Physical Review Materials Journal Volume: 1 Journal Issue: 6; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Shen, Jimmy-Xuan, Wickramaratne, Darshana, and Van de Walle, Chris G. Band bowing and the direct-to-indirect crossover in random BAlN alloys. United States: N. p., 2017. Web. doi:10.1103/PhysRevMaterials.1.065001.
Shen, Jimmy-Xuan, Wickramaratne, Darshana, & Van de Walle, Chris G. Band bowing and the direct-to-indirect crossover in random BAlN alloys. United States. https://doi.org/10.1103/PhysRevMaterials.1.065001
Shen, Jimmy-Xuan, Wickramaratne, Darshana, and Van de Walle, Chris G. Mon . "Band bowing and the direct-to-indirect crossover in random BAlN alloys". United States. https://doi.org/10.1103/PhysRevMaterials.1.065001.
@article{osti_1408554,
title = {Band bowing and the direct-to-indirect crossover in random BAlN alloys},
author = {Shen, Jimmy-Xuan and Wickramaratne, Darshana and Van de Walle, Chris G.},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.1.065001},
journal = {Physical Review Materials},
number = 6,
volume = 1,
place = {United States},
year = {2017},
month = {11}
}

Journal Article:
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Cited by: 27 works
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Works referenced in this record:

Ultrafine powders of TiN and AlN produced by a reactive gas evaporation technique with electron beam heating
journal, January 1982


Thermodynamical and electronic properties of B x Al 1 x N alloys: A first principle study
journal, November 2015


AlGaN/GaN HEMTs-an overview of device operation and applications
journal, June 2002


Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
journal, January 2014


Projector augmented-wave method
journal, December 1994


Electronic properties of random alloys: Special quasirandom structures
journal, November 1990


Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996


Normal Modes in Hexagonal Boron Nitride
journal, June 1966


Accurate ab initio predictions of III–V direct-indirect band gap crossovers
journal, August 2010

  • Nicklas, Jeremy W.; Wilkins, John W.
  • Applied Physics Letters, Vol. 97, Issue 9
  • DOI: 10.1063/1.3485297

Growth of BxAl1−xN layers using decaborane on SiC substrates
journal, May 2005


Spinodal decomposition in BxGa1−xN and BxAl1−xN alloys
journal, February 2002

  • Teles, L. K.; Scolfaro, L. M. R.; Leite, J. R.
  • Applied Physics Letters, Vol. 80, Issue 7
  • DOI: 10.1063/1.1450261

Extracting E versus k effective band structure from supercell calculations on alloys and impurities
journal, February 2012


MOVPE grown periodic AlN/BAlN heterostructure with high boron content
journal, March 2015


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


Band alignments and polarization properties of BN polymorphs
journal, February 2014

  • Dreyer, Cyrus E.; Lyons, John L.; Janotti, Anderson
  • Applied Physics Express, Vol. 7, Issue 3
  • DOI: 10.7567/APEX.7.031001

Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy
journal, January 2008


History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
journal, October 2013


Bond-length relaxation in pseudobinary alloys
journal, January 1985


Growth of ternary wurtzite BAlN and BGaN by ENABLE-MBE: Growth of ternary wurtzite BAlN and BGaN by ENABLE-MBE
journal, February 2014

  • Williamson, Todd L.; Weisse-Bernstein, Nina R.; Hoffbauer, Mark A.
  • physica status solidi (c), Vol. 11, Issue 3-4
  • DOI: 10.1002/pssc.201300741

Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)]
journal, June 2006

  • Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias
  • The Journal of Chemical Physics, Vol. 124, Issue 21
  • DOI: 10.1063/1.2204597

Interplay of alloying and ordering on the electronic structure of GaxIn1xP alloys
journal, December 2008

  • Zhang, Yong; Mascarenhas, A.; Wang, L.-W.
  • Physical Review B, Vol. 78, Issue 23, Article No. 235202
  • DOI: 10.1103/PhysRevB.78.235202

Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides
journal, June 2016

  • Dreyer, Cyrus E.; Janotti, Anderson; Van de Walle, Chris G.
  • Physical Review X, Vol. 6, Issue 2
  • DOI: 10.1103/PhysRevX.6.021038

Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
journal, March 2002

  • Teles, L. K.; Furthmüller, J.; Scolfaro, L. M. R.
  • Physica E: Low-dimensional Systems and Nanostructures, Vol. 13, Issue 2-4
  • DOI: 10.1016/S1386-9477(02)00309-0

Boron nitride phase diagram. State of the art
journal, March 1995


High-power blue laser diodes with indium tin oxide cladding on semipolar(202¯1¯) GaN substrates
journal, March 2015

  • Pourhashemi, A.; Farrell, R. M.; Cohen, D. A.
  • Applied Physics Letters, Vol. 106, Issue 11, Article No. 111105
  • DOI: 10.1063/1.4915324

On the influence of nitrogen pressure on the ordering of hexagonal boron nitride
journal, December 1994


Equation of state of wurtzitic boron nitride to 66 GPa
journal, April 1998

  • Solozhenko, Vladimir L.; Häusermann, Daniel; Mezouar, Mohamed
  • Applied Physics Letters, Vol. 72, Issue 14
  • DOI: 10.1063/1.121186

Optical constants of epitaxial AlGaN films and their temperature dependence
journal, November 1997

  • Brunner, D.; Angerer, H.; Bustarret, E.
  • Journal of Applied Physics, Vol. 82, Issue 10
  • DOI: 10.1063/1.366309

Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys
journal, February 1998


The structural and electronic properties of (AlN) x (C 2 ) 1− x and (AlN) x (BN) 1− x alloys
journal, May 2001

  • Zheng, Jin-Cheng; Wang, Hui-Qiong; Huan, C. H. A.
  • Journal of Physics: Condensed Matter, Vol. 13, Issue 22
  • DOI: 10.1088/0953-8984/13/22/322

A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu
journal, April 2010

  • Grimme, Stefan; Antony, Jens; Ehrlich, Stephan
  • The Journal of Chemical Physics, Vol. 132, Issue 15
  • DOI: 10.1063/1.3382344

Band structure and fundamental optical transitions in wurtzite AlN
journal, December 2003

  • Li, J.; Nam, K. B.; Nakarmi, M. L.
  • Applied Physics Letters, Vol. 83, Issue 25
  • DOI: 10.1063/1.1633965

Elastic constants of cubic and wurtzite boron nitrides
journal, June 2013

  • Nagakubo, A.; Ogi, H.; Sumiya, H.
  • Applied Physics Letters, Vol. 102, Issue 24
  • DOI: 10.1063/1.4811789

Hexagonal boron nitride is an indirect bandgap semiconductor
journal, January 2016


Python Materials Genomics (pymatgen): A robust, open-source python library for materials analysis
journal, February 2013