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Title: Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus

Abstract

Black phosphorus (BP) is a layered semiconductor with a high mobility of up to ~1000 cm 2 V -1 s -1 and a narrow bandgap of ~0.3 eV, and shows potential applications in thermoelectrics. In stark contrast to most other layered materials, electrical and thermoelectric properties in the basal plane of BP are highly anisotropic. In order to elucidate the mechanism for such anisotropy, we fabricated BP nanoribbons (~100 nm thick) along the armchair and zigzag directions, and measured the transport properties. It is found that both the electrical conductivity and Seebeck co efficient increase with temperature, a behavior contradictory to that of traditional semiconductors. The three-dimensional variable range hopping model is adopted to analyze this abnormal temperature dependency of electrical conductivity and Seebeck coefficient. Furthermore, the hopping transport of the BP nanoribbons, attributed to high density of trap states in the samples, provides a fundamental understanding of the anisotropic BP for potential thermoelectric applications.

Authors:
 [1];  [2];  [3];  [3]; ORCiD logo [3];  [4];  [5]
  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Science Division; Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
  2. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering , Tsinghua-Berkeley Shenzhen Inst.
  3. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
  4. Arizona State Univ., Tempe, AZ (United States). School for Engineering of Matter, Transport and Energy
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Science Division; Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering, Tsinghua-Berkeley Shenzhen Inst.
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1408470
Alternate Identifier(s):
OSTI ID: 1378420
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 10; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Liu, Huili, Sung Choe, Hwan, Chen, Yabin, Suh, Joonki, Ko, Changhyun, Tongay, Sefaattin, and Wu, Junqiao. Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus. United States: N. p., 2017. Web. doi:10.1063/1.4985333.
Liu, Huili, Sung Choe, Hwan, Chen, Yabin, Suh, Joonki, Ko, Changhyun, Tongay, Sefaattin, & Wu, Junqiao. Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus. United States. doi:10.1063/1.4985333.
Liu, Huili, Sung Choe, Hwan, Chen, Yabin, Suh, Joonki, Ko, Changhyun, Tongay, Sefaattin, and Wu, Junqiao. Tue . "Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus". United States. doi:10.1063/1.4985333. https://www.osti.gov/servlets/purl/1408470.
@article{osti_1408470,
title = {Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus},
author = {Liu, Huili and Sung Choe, Hwan and Chen, Yabin and Suh, Joonki and Ko, Changhyun and Tongay, Sefaattin and Wu, Junqiao},
abstractNote = {Black phosphorus (BP) is a layered semiconductor with a high mobility of up to ~1000 cm 2 V -1 s -1 and a narrow bandgap of ~0.3 eV, and shows potential applications in thermoelectrics. In stark contrast to most other layered materials, electrical and thermoelectric properties in the basal plane of BP are highly anisotropic. In order to elucidate the mechanism for such anisotropy, we fabricated BP nanoribbons (~100 nm thick) along the armchair and zigzag directions, and measured the transport properties. It is found that both the electrical conductivity and Seebeck co efficient increase with temperature, a behavior contradictory to that of traditional semiconductors. The three-dimensional variable range hopping model is adopted to analyze this abnormal temperature dependency of electrical conductivity and Seebeck coefficient. Furthermore, the hopping transport of the BP nanoribbons, attributed to high density of trap states in the samples, provides a fundamental understanding of the anisotropic BP for potential thermoelectric applications.},
doi = {10.1063/1.4985333},
journal = {Applied Physics Letters},
number = 10,
volume = 111,
place = {United States},
year = {2017},
month = {9}
}

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