Resolving the Structure of a Well-Ordered Hydroxyl Overlayer on In 2 O 3 (111): Nanomanipulation and Theory
Abstract
Changes in chemical and physical properties resulting from water adsorption play an important role in the characterization and performance of device-relevant materials. Studies of model oxides with well-characterized surfaces can provide detailed information that is vital for a general understanding of water–oxide interactions. In this work, we study single crystals of indium oxide, the prototypical transparent contact material that is heavily used in a wide range of applications and most prominently in optoelectronic technologies. Water adsorbs dissociatively already at temperatures as low as 100 K, as confirmed by scanning tunneling microscopy (STM), photoelectron spectroscopy, and density functional theory. This dissociation takes place on lattice sites of the defect-free surface. While the In2O3(111)-(1 × 1) surface offers four types of surface oxygen atoms (12 atoms per unit cell in total), water dissociation happens exclusively at one of them together with a neighboring pair of 5-fold coordinated In atoms. These O–In groups are symmetrically arranged around the 6-fold coordinated In atoms at the surface. At room temperature, the In2O3(111) surface thus saturates at three dissociated water molecules per unit cell, leading to a well-ordered hydroxylated surface with (1 × 1) symmetry, where the three water OWH groups plus the surface OSH groupsmore »
- Authors:
-
- Institute of Applied Physics, TU Wien, Wiedner Hauptstraße 8-10/134, 1040 Vienna, Austria
- Interdisciplinary Center for Molecular Materials and Computer-Chemistry-Center, Friedrich-Alexander-Universität Erlangen-Nürnberg, Nägelsbachstraße 25, 91052 Erlangen, Germany
- MAX IV Laboratory, Lund University, Ole Römers väg 1, 223 63 Lund, Sweden
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1408068
- Alternate Identifier(s):
- OSTI ID: 1421789; OSTI ID: 1426584
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Published Article
- Journal Name:
- ACS Nano
- Additional Journal Information:
- Journal Name: ACS Nano Journal Volume: 11 Journal Issue: 11; Journal ID: ISSN 1936-0851
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; density functional theory; hydroxylation; indium oxide; scanning tunneling microscopy; water dissociation
Citation Formats
Wagner, Margareta, Lackner, Peter, Seiler, Steffen, Brunsch, Achim, Bliem, Roland, Gerhold, Stefan, Wang, Zhiming, Osiecki, Jacek, Schulte, Karina, Boatner, Lynn A., Schmid, Michael, Meyer, Bernd, and Diebold, Ulrike. Resolving the Structure of a Well-Ordered Hydroxyl Overlayer on In 2 O 3 (111): Nanomanipulation and Theory. United States: N. p., 2017.
Web. doi:10.1021/acsnano.7b06387.
Wagner, Margareta, Lackner, Peter, Seiler, Steffen, Brunsch, Achim, Bliem, Roland, Gerhold, Stefan, Wang, Zhiming, Osiecki, Jacek, Schulte, Karina, Boatner, Lynn A., Schmid, Michael, Meyer, Bernd, & Diebold, Ulrike. Resolving the Structure of a Well-Ordered Hydroxyl Overlayer on In 2 O 3 (111): Nanomanipulation and Theory. United States. doi:https://doi.org/10.1021/acsnano.7b06387
Wagner, Margareta, Lackner, Peter, Seiler, Steffen, Brunsch, Achim, Bliem, Roland, Gerhold, Stefan, Wang, Zhiming, Osiecki, Jacek, Schulte, Karina, Boatner, Lynn A., Schmid, Michael, Meyer, Bernd, and Diebold, Ulrike. Wed .
"Resolving the Structure of a Well-Ordered Hydroxyl Overlayer on In 2 O 3 (111): Nanomanipulation and Theory". United States. doi:https://doi.org/10.1021/acsnano.7b06387.
@article{osti_1408068,
title = {Resolving the Structure of a Well-Ordered Hydroxyl Overlayer on In 2 O 3 (111): Nanomanipulation and Theory},
author = {Wagner, Margareta and Lackner, Peter and Seiler, Steffen and Brunsch, Achim and Bliem, Roland and Gerhold, Stefan and Wang, Zhiming and Osiecki, Jacek and Schulte, Karina and Boatner, Lynn A. and Schmid, Michael and Meyer, Bernd and Diebold, Ulrike},
abstractNote = {Changes in chemical and physical properties resulting from water adsorption play an important role in the characterization and performance of device-relevant materials. Studies of model oxides with well-characterized surfaces can provide detailed information that is vital for a general understanding of water–oxide interactions. In this work, we study single crystals of indium oxide, the prototypical transparent contact material that is heavily used in a wide range of applications and most prominently in optoelectronic technologies. Water adsorbs dissociatively already at temperatures as low as 100 K, as confirmed by scanning tunneling microscopy (STM), photoelectron spectroscopy, and density functional theory. This dissociation takes place on lattice sites of the defect-free surface. While the In2O3(111)-(1 × 1) surface offers four types of surface oxygen atoms (12 atoms per unit cell in total), water dissociation happens exclusively at one of them together with a neighboring pair of 5-fold coordinated In atoms. These O–In groups are symmetrically arranged around the 6-fold coordinated In atoms at the surface. At room temperature, the In2O3(111) surface thus saturates at three dissociated water molecules per unit cell, leading to a well-ordered hydroxylated surface with (1 × 1) symmetry, where the three water OWH groups plus the surface OSH groups are imaged together as one bright triangle in STM. Manipulations with the STM tip by means of voltage pulses preferentially remove the H atom of one surface OSH group per triangle. The change in contrast due to strong local band bending provides insights into the internal structure of these bright triangles. The experimental results are further confirmed by quantitative simulations of the STM image corrugation.},
doi = {10.1021/acsnano.7b06387},
journal = {ACS Nano},
number = 11,
volume = 11,
place = {United States},
year = {2017},
month = {9}
}
DOI: https://doi.org/10.1021/acsnano.7b06387
Web of Science
Works referencing / citing this record:
Water adsorption at zirconia: from the ZrO 2 (111)/Pt 3 Zr(0001) model system to powder samples
journal, January 2018
- Lackner, Peter; Hulva, Jan; Köck, Eva-Maria
- Journal of Materials Chemistry A, Vol. 6, Issue 36
CO 2 adsorption on hydroxylated In 2 O 3 (110)
journal, January 2019
- Posada-Borbón, Alvaro; Grönbeck, Henrik
- Physical Chemistry Chemical Physics, Vol. 21, Issue 39
Growth of In 2 O 3 (111) thin films with optimized surfaces
journal, October 2019
- Franceschi, Giada; Wagner, Margareta; Hofinger, Jakob
- Physical Review Materials, Vol. 3, Issue 10
X-ray Photospectroscopy and Electronic Studies of Reactor Parameters on Photocatalytic Hydrogenation of Carbon Dioxide by Defect-Laden Indium Oxide Hydroxide Nanorods
journal, October 2019
- Loh, Joel Y. Y.; Kherani, Nazir P.
- Molecules, Vol. 24, Issue 21