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Title: Exposing high-energy surfaces by rapid-anneal solid phase epitaxy

The functional design of nanoscale transition metal oxide heterostructures depends critically on the growth of atomically flat epitaxial thin films. Much of the time, improved functionality is expected for heterostructures and surfaces with orientations that do not have the lowest surface free energy. For example, crystal faces with a high surface free energy, such as rutile (001) planes, frequently exhibit higher catalytic activities but are correspondingly harder to synthesize due to energy-lowering faceting transitions. We propose a broadly applicable rapid-anneal solid phase epitaxial synthesis approach for the creation of atomically flat, high surface free energy oxide heterostructures. We also demonstrate its efficacy via the synthesis of atomically flat, epitaxial RuO 2(001) films with a superior oxygen evolution activity, quantified by their lower onset potential and higher current density, relative to that of more common RuO 2(110) films.
Authors:
ORCiD logo [1] ; ORCiD logo [2] ; ORCiD logo [2] ; ORCiD logo [1] ; ORCiD logo [1] ; ORCiD logo [2] ; ORCiD logo [1] ; ORCiD logo [3] ; ORCiD logo [3]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 5; Journal Issue: 8; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
OSTI Identifier:
1407994
Alternate Identifier(s):
OSTI ID: 1374209

Wang, Y., Song, Y., Peng, R., Herklotz, A., Chisholm, M. F., Wu, Z. L., Ward, T. Z., Weitering, H. H., and Snijders, P. C.. Exposing high-energy surfaces by rapid-anneal solid phase epitaxy. United States: N. p., Web. doi:10.1063/1.4992004.
Wang, Y., Song, Y., Peng, R., Herklotz, A., Chisholm, M. F., Wu, Z. L., Ward, T. Z., Weitering, H. H., & Snijders, P. C.. Exposing high-energy surfaces by rapid-anneal solid phase epitaxy. United States. doi:10.1063/1.4992004.
Wang, Y., Song, Y., Peng, R., Herklotz, A., Chisholm, M. F., Wu, Z. L., Ward, T. Z., Weitering, H. H., and Snijders, P. C.. 2017. "Exposing high-energy surfaces by rapid-anneal solid phase epitaxy". United States. doi:10.1063/1.4992004. https://www.osti.gov/servlets/purl/1407994.
@article{osti_1407994,
title = {Exposing high-energy surfaces by rapid-anneal solid phase epitaxy},
author = {Wang, Y. and Song, Y. and Peng, R. and Herklotz, A. and Chisholm, M. F. and Wu, Z. L. and Ward, T. Z. and Weitering, H. H. and Snijders, P. C.},
abstractNote = {The functional design of nanoscale transition metal oxide heterostructures depends critically on the growth of atomically flat epitaxial thin films. Much of the time, improved functionality is expected for heterostructures and surfaces with orientations that do not have the lowest surface free energy. For example, crystal faces with a high surface free energy, such as rutile (001) planes, frequently exhibit higher catalytic activities but are correspondingly harder to synthesize due to energy-lowering faceting transitions. We propose a broadly applicable rapid-anneal solid phase epitaxial synthesis approach for the creation of atomically flat, high surface free energy oxide heterostructures. We also demonstrate its efficacy via the synthesis of atomically flat, epitaxial RuO2(001) films with a superior oxygen evolution activity, quantified by their lower onset potential and higher current density, relative to that of more common RuO2(110) films.},
doi = {10.1063/1.4992004},
journal = {APL Materials},
number = 8,
volume = 5,
place = {United States},
year = {2017},
month = {8}
}