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This content will become publicly available on November 6, 2018

Title: Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al 2 O 3 dielectrics grown on GaN

Authors:
ORCiD logo [1] ;  [2] ; ORCiD logo [3] ;  [3] ;  [3] ;  [3] ; ORCiD logo [4] ;  [2] ;  [3]
  1. Materials Department, University of California, Santa Barbara, California 93106, USA
  2. Department of Information Engineering, University of Padova, Via Gradenigo 6/B, 35131 Padova, Italy
  3. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
  4. Materials Department, University of California, Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 17; Related Information: CHORUS Timestamp: 2017-11-06 09:57:20; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1407436