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Title: Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al 2 O 3 dielectrics grown on GaN

Authors:
ORCiD logo [1] ;  [2] ; ORCiD logo [3] ;  [3] ;  [3] ;  [3] ; ORCiD logo [4] ;  [2] ;  [3]
  1. Materials Department, University of California, Santa Barbara, California 93106, USA
  2. Department of Information Engineering, University of Padova, Via Gradenigo 6/B, 35131 Padova, Italy
  3. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
  4. Materials Department, University of California, Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 122 Journal Issue: 17; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1407436

Chan, Silvia H., Bisi, Davide, Liu, Xiang, Yeluri, Ramya, Tahhan, Maher, Keller, Stacia, DenBaars, Steven P., Meneghini, Matteo, and Mishra, Umesh K.. Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al 2 O 3 dielectrics grown on GaN. United States: N. p., Web. doi:10.1063/1.5009757.
Chan, Silvia H., Bisi, Davide, Liu, Xiang, Yeluri, Ramya, Tahhan, Maher, Keller, Stacia, DenBaars, Steven P., Meneghini, Matteo, & Mishra, Umesh K.. Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al 2 O 3 dielectrics grown on GaN. United States. doi:10.1063/1.5009757.
Chan, Silvia H., Bisi, Davide, Liu, Xiang, Yeluri, Ramya, Tahhan, Maher, Keller, Stacia, DenBaars, Steven P., Meneghini, Matteo, and Mishra, Umesh K.. 2017. "Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al 2 O 3 dielectrics grown on GaN". United States. doi:10.1063/1.5009757.
@article{osti_1407436,
title = {Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al 2 O 3 dielectrics grown on GaN},
author = {Chan, Silvia H. and Bisi, Davide and Liu, Xiang and Yeluri, Ramya and Tahhan, Maher and Keller, Stacia and DenBaars, Steven P. and Meneghini, Matteo and Mishra, Umesh K.},
abstractNote = {},
doi = {10.1063/1.5009757},
journal = {Journal of Applied Physics},
number = 17,
volume = 122,
place = {United States},
year = {2017},
month = {11}
}

Works referenced in this record:

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  • Puurunen, Riikka L.
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Atomic Layer Deposition: An Overview
journal, January 2010
  • George, Steven M.
  • Chemical Reviews, Vol. 110, Issue 1, p. 111-131
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