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This content will become publicly available on November 6, 2018

Title: Thermal adsorption-enhanced atomic layer etching of Si 3 N 4

Authors:
 [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [3]
  1. Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305 and Division of Advanced Materials Engineering, Chonbuk National University, Jeonbuk 54896, South Korea
  2. Samsung Electronics, Manufacturing Technology Center, San 1-1 Banwol-Dong, Hwasung-Si, Gyeonggi-Do 445-330, South Korea
  3. Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305
Publication Date:
Grant/Contract Number:
SC0004782
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 36; Journal Issue: 1; Related Information: CHORUS Timestamp: 2018-02-14 21:24:19; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1407433