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Title: Thermal adsorption-enhanced atomic layer etching of Si 3 N 4

Authors:
 [1];  [2];  [2];  [2];  [2];  [2];  [3]
  1. Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305 and Division of Advanced Materials Engineering, Chonbuk National University, Jeonbuk 54896, South Korea
  2. Samsung Electronics, Manufacturing Technology Center, San 1-1 Banwol-Dong, Hwasung-Si, Gyeonggi-Do 445-330, South Korea
  3. Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1407433
Grant/Contract Number:  
SC0004782
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology A
Additional Journal Information:
Journal Name: Journal of Vacuum Science and Technology A Journal Volume: 36 Journal Issue: 1; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society
Country of Publication:
United States
Language:
English

Citation Formats

Kim, Woo-Hee, Sung, Dougyong, Oh, Sejin, Woo, Jehun, Lim, Seungkyu, Lee, Hyunju, and Bent, Stacey F. Thermal adsorption-enhanced atomic layer etching of Si 3 N 4. United States: N. p., 2018. Web. doi:10.1116/1.5003271.
Kim, Woo-Hee, Sung, Dougyong, Oh, Sejin, Woo, Jehun, Lim, Seungkyu, Lee, Hyunju, & Bent, Stacey F. Thermal adsorption-enhanced atomic layer etching of Si 3 N 4. United States. doi:10.1116/1.5003271.
Kim, Woo-Hee, Sung, Dougyong, Oh, Sejin, Woo, Jehun, Lim, Seungkyu, Lee, Hyunju, and Bent, Stacey F. Mon . "Thermal adsorption-enhanced atomic layer etching of Si 3 N 4". United States. doi:10.1116/1.5003271.
@article{osti_1407433,
title = {Thermal adsorption-enhanced atomic layer etching of Si 3 N 4},
author = {Kim, Woo-Hee and Sung, Dougyong and Oh, Sejin and Woo, Jehun and Lim, Seungkyu and Lee, Hyunju and Bent, Stacey F.},
abstractNote = {},
doi = {10.1116/1.5003271},
journal = {Journal of Vacuum Science and Technology A},
number = 1,
volume = 36,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1116/1.5003271

Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

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