A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods
Abstract
In this paper, the properties of point defects in Cd1-xZnxTe1-ySey (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the VCd- concentration. In Travelling Heater Method (THM) and Bridgman Method (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of VCd- and two additional traps (attributed to Tei- and TeCd++ appearing at around Ev + 0.26 eV and Ec - 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral responsemore »
- Authors:
-
- Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River National Lab., Aiken, SC (United States)
- Publication Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Savannah River Site (SRS), Aiken, SC (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1367976
- Alternate Identifier(s):
- OSTI ID: 1406493
- Report Number(s):
- LLNL-JRNL-718467; SRNL-STI-2017-00152
Journal ID: ISSN 0021-8979
- Grant/Contract Number:
- AC52-07NA27344; AC09-08SR22470
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 121; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CdZnTeSe; point defects; carrier trapping; iDLTS; deep levels; radiation detectors; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Citation Formats
Gul, R., Roy, U. N., Camarda, G. S., Hossain, A., Yang, G., Vanier, P., Varley, J., Lordi, V., and James, R. B. A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods. United States: N. p., 2017.
Web. doi:10.1063/1.4979012.
Gul, R., Roy, U. N., Camarda, G. S., Hossain, A., Yang, G., Vanier, P., Varley, J., Lordi, V., & James, R. B. A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods. United States. https://doi.org/10.1063/1.4979012
Gul, R., Roy, U. N., Camarda, G. S., Hossain, A., Yang, G., Vanier, P., Varley, J., Lordi, V., and James, R. B. Tue .
"A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods". United States. https://doi.org/10.1063/1.4979012. https://www.osti.gov/servlets/purl/1367976.
@article{osti_1367976,
title = {A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods},
author = {Gul, R. and Roy, U. N. and Camarda, G. S. and Hossain, A. and Yang, G. and Vanier, P. and Varley, J. and Lordi, V. and James, R. B.},
abstractNote = {In this paper, the properties of point defects in Cd1-xZnxTe1-ySey (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the VCd- concentration. In Travelling Heater Method (THM) and Bridgman Method (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of VCd- and two additional traps (attributed to Tei- and TeCd++ appearing at around Ev + 0.26 eV and Ec - 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.},
doi = {10.1063/1.4979012},
journal = {Journal of Applied Physics},
number = ,
volume = 121,
place = {United States},
year = {Tue Mar 28 00:00:00 EDT 2017},
month = {Tue Mar 28 00:00:00 EDT 2017}
}
Web of Science
Works referenced in this record:
CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications
journal, March 2004
- Szeles, Csaba
- physica status solidi (b), Vol. 241, Issue 3
Research Update: Point defects in CdTe x Se 1−x crystals grown from a Te-rich solution for applications in detecting radiation
journal, April 2015
- Gul, R.; Roy, U. N.; Bolotnikov, A. E.
- APL Materials, Vol. 3, Issue 4
Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects
journal, April 2010
- Bolotnikov, Aleksey E.; Babalola, Stephen; Camarda, Giuseppe S.
- IEEE Transactions on Nuclear Science, Vol. 57, Issue 2
Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements
journal, November 2011
- Gul, R.; Keeter, K.; Rodriguez, R.
- Journal of Electronic Materials, Vol. 41, Issue 3
Investigation of the electronic properties of cadmium zinc telluride surfaces using pulsed laser microwave cavity perturbation
conference, December 2001
- Tepper, Gary C.; Kessick, Royal; Szeles, Csaba
- International Symposium on Optical Science and Technology, SPIE Proceedings
Point defects: Their influence on electron trapping, resistivity, and electron mobility-lifetime product in CdTe x Se 1−x detectors
journal, January 2016
- Gul, R.; Roy, U. N.; Egarievwe, S. U.
- Journal of Applied Physics, Vol. 119, Issue 2
Characterization of large cadmium zinc telluride crystals grown by traveling heater method
journal, January 2008
- Chen, H.; Awadalla, S. A.; Iniewski, K.
- Journal of Applied Physics, Vol. 103, Issue 1
Cadmium zinc telluride and its use as a nuclear radiation detector material
journal, April 2001
- Schlesinger, T. E.; Toney, J. E.; Yoon, H.
- Materials Science and Engineering: R: Reports, Vol. 32, Issue 4-5
High compositional homogeneity of CdTe x Se 1−x crystals grown by the Bridgman method
journal, February 2015
- Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.
- APL Materials, Vol. 3, Issue 2
An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers
journal, March 2017
- Gul, R.; Roy, U. N.; James, R. B.
- Journal of Applied Physics, Vol. 121, Issue 11
Non-stoichiometry related defects at the melt growth of semiconductor compound crystals – a review
journal, July 2003
- Rudolph, P.
- Crystal Research and Technology, Vol. 38, Issue 78
Point Defects in CdZnTe Crystals Grown by Different Techniques
journal, February 2011
- Gul, R.; Bolotnikov, A.; Kim, H. K.
- Journal of Electronic Materials, Vol. 40, Issue 3
Growth and characterization of CdMnTe by the vertical Bridgman technique
journal, March 2016
- Roy, U. N.; Camarda, G. S.; Cui, Y.
- Journal of Crystal Growth, Vol. 437
Correlations Between Crystal Defects and Performance of CdZnTe Detectors
journal, August 2011
- Bolotnikov, A. E.; Babalola, S.; Camarda, G. S.
- IEEE Transactions on Nuclear Science, Vol. 58, Issue 4
Works referencing / citing this record:
Macroscopic effects and microscopic origins of gamma-ray irradiation on In-doped CdZnTe crystal
journal, October 2018
- Nan, Ruihua; Li, Tao; Jian, Zengyun
- Journal of Materials Science: Materials in Electronics, Vol. 29, Issue 23
Influence of deep levels on the electrical transport properties of CdZnTeSe detectors
journal, December 2018
- Rejhon, M.; Franc, J.; Dědič, V.
- Journal of Applied Physics, Vol. 124, Issue 23