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This content will become publicly available on October 30, 2018

Title: Moving towards the magnetoelectric graphene transistor

Here, the interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr 2O 3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications.
ORCiD logo [1] ; ORCiD logo [1] ;  [2] ;  [3] ;  [4] ;  [3] ;  [5] ; ORCiD logo [1] ; ORCiD logo [1]
  1. Univ. of Nebraksa-Lincoln, Lincoln, NE (United States)
  2. Univ. at Buffalo, The State Uni. of New York, Buffalo, NY (United States)
  3. Univ. of Science and Technology of China, Anhui (China)
  4. Univ. at Buffalo, The State Univ. of New York, Buffalo, NY (United States)
  5. Univ. of Nebraska at Omaha, Omaha, NE (United States)
Publication Date:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 18; Related Information:; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Univ. of Nebraksa-Lincoln, Lincoln, NE (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; graphene; Cr2O3; magnetoelectric; interfacial charge transfer; scanning probe microscopy
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1406386