Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV

Young, David L.; Lee, Benjamin G.; Fogel, Derek; Nemeth, William; LaSalvia, Vincenzo; Theingi, San; Page, Matthew; Young, Matthew; Perkins, Craig; Stradins, Paul

doi:10.1109/JPHOTOV.2017.2748422

Title: Gallium-Doped Poly-Si:Ga/SiO₂ Passivated Emitters to n-Cz Wafers With iV_oc >730 mV

Abstract

Here, we form gallium-doped poly-Si:Ga/SiO₂ passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al₂O₃, the contacts exhibit i_Voc values of >730 mV with corresponding Joe values of <5 fA/cm². These are among the best-reported values for p-type poly-Si/SiO₂ contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO₂ interface in agreement with its known high diffusivity in SiO₂. This lack of Ga pileup may imply fewer dopant-related defects in the SiO₂, compared with B dopants, and account for the excellent passivation.

Authors:

^[1]; Lee, Benjamin G. ^[1]; Fogel, Derek ^[1]; Nemeth, William ^[1]; LaSalvia, Vincenzo ^[1]; Theingi, San ^[1]; Page, Matthew ^[1]; Young, Matthew ^[1]; Perkins, Craig ^[1]; Stradins, Paul ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: Tue Sep 26 00:00:00 EDT 2017

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S), SunShot National Laboratory Multiyear Partnership (SuNLaMP); USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1406184

Report Number(s):: NREL/JA-5J00-67872
Journal ID: ISSN 2156-3381

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Journal of Photovoltaics

Additional Journal Information:: Journal Volume: 7; Journal Issue: 6; Journal ID: ISSN 2156-3381

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; passivated contacts; silicon; solar cells; gallium; implied open circuit voltage

Citation Formats


                    Young, David L., Lee, Benjamin G., Fogel, Derek, Nemeth, William, LaSalvia, Vincenzo, Theingi, San, Page, Matthew, Young, Matthew, Perkins, Craig, and Stradins, Paul. Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV.  United States: N. p., 2017. 
Web.  doi:10.1109/JPHOTOV.2017.2748422.

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                    Young, David L., Lee, Benjamin G., Fogel, Derek, Nemeth, William, LaSalvia, Vincenzo, Theingi, San, Page, Matthew, Young, Matthew, Perkins, Craig, & Stradins, Paul. Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV.  United States.  https://doi.org/10.1109/JPHOTOV.2017.2748422

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                    Young, David L., Lee, Benjamin G., Fogel, Derek, Nemeth, William, LaSalvia, Vincenzo, Theingi, San, Page, Matthew, Young, Matthew, Perkins, Craig, and Stradins, Paul. Tue .  
"Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV".  United States.  https://doi.org/10.1109/JPHOTOV.2017.2748422.  https://www.osti.gov/servlets/purl/1406184.

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@article{osti_1406184,

  title        = {Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV},

  author       = {Young, David L. and Lee, Benjamin G. and Fogel, Derek and Nemeth, William and LaSalvia, Vincenzo and Theingi, San and Page, Matthew and Young, Matthew and Perkins, Craig and Stradins, Paul},

  abstractNote = {Here, we form gallium-doped poly-Si:Ga/SiO2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al2O3, the contacts exhibit iVoc values of >730 mV with corresponding Joe values of <5 fA/cm2. These are among the best-reported values for p-type poly-Si/SiO2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO2 interface in agreement with its known high diffusivity in SiO2. This lack of Ga pileup may imply fewer dopant-related defects in the SiO2, compared with B dopants, and account for the excellent passivation.},

  doi          = {10.1109/JPHOTOV.2017.2748422},

  journal      = {IEEE Journal of Photovoltaics},

  number       = 6,

  volume       = 7,

  place        = {United States},

  year         = {Tue Sep 26 00:00:00 EDT 2017},

  month        = {Tue Sep 26 00:00:00 EDT 2017}

}

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Applied Physics Letters, Vol. 113, Issue 26
DOI: 10.1063/1.5059559

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Similar Records

Title: Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV

Abstract

Citation Formats

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journal, December 2018