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Title: Gallium-Doped Poly-Si:Ga/SiO 2 Passivated Emitters to n-Cz Wafers With iV oc >730 mV

Here, we form gallium-doped poly-Si:Ga/SiO 2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al 2O 3, the contacts exhibit i Voc values of >730 mV with corresponding Joe values of <5 fA/cm 2. These are among the best-reported values for p-type poly-Si/SiO 2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO 2 interface in agreement with its known high diffusivity in SiO 2. This lack of Ga pileup may imply fewer dopant-related defects in the SiO 2, compared with B dopants, and account for the excellent passivation.
Authors:
ORCiD logo [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5J00-67872
Journal ID: ISSN 2156-3381
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 7; Journal Issue: 6; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S), SunShot National Laboratory Multiyear Partnership (SuNLaMP); USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; passivated contacts; silicon; solar cells; gallium; implied open circuit voltage
OSTI Identifier:
1406184

Young, David L., Lee, Benjamin G., Fogel, Derek, Nemeth, William, LaSalvia, Vincenzo, Theingi, San, Page, Matthew, Young, Matthew, Perkins, Craig, and Stradins, Paul. Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV. United States: N. p., Web. doi:10.1109/JPHOTOV.2017.2748422.
Young, David L., Lee, Benjamin G., Fogel, Derek, Nemeth, William, LaSalvia, Vincenzo, Theingi, San, Page, Matthew, Young, Matthew, Perkins, Craig, & Stradins, Paul. Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV. United States. doi:10.1109/JPHOTOV.2017.2748422.
Young, David L., Lee, Benjamin G., Fogel, Derek, Nemeth, William, LaSalvia, Vincenzo, Theingi, San, Page, Matthew, Young, Matthew, Perkins, Craig, and Stradins, Paul. 2017. "Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV". United States. doi:10.1109/JPHOTOV.2017.2748422. https://www.osti.gov/servlets/purl/1406184.
@article{osti_1406184,
title = {Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV},
author = {Young, David L. and Lee, Benjamin G. and Fogel, Derek and Nemeth, William and LaSalvia, Vincenzo and Theingi, San and Page, Matthew and Young, Matthew and Perkins, Craig and Stradins, Paul},
abstractNote = {Here, we form gallium-doped poly-Si:Ga/SiO2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al2O3, the contacts exhibit iVoc values of >730 mV with corresponding Joe values of <5 fA/cm2. These are among the best-reported values for p-type poly-Si/SiO2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO2 interface in agreement with its known high diffusivity in SiO2. This lack of Ga pileup may imply fewer dopant-related defects in the SiO2, compared with B dopants, and account for the excellent passivation.},
doi = {10.1109/JPHOTOV.2017.2748422},
journal = {IEEE Journal of Photovoltaics},
number = 6,
volume = 7,
place = {United States},
year = {2017},
month = {9}
}