Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV

Young, David L.; Lee, Benjamin G.; Fogel, Derek; Nemeth, William; LaSalvia, Vincenzo; Theingi, San; Page, Matthew; Young, Matthew; Perkins, Craig; Stradins, Paul

doi:10.1109/JPHOTOV.2017.2748422

Title: Gallium-Doped Poly-Si:Ga/SiO₂ Passivated Emitters to n-Cz Wafers With iV_oc >730 mV

Abstract

Here, we form gallium-doped poly-Si:Ga/SiO₂ passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al₂O₃, the contacts exhibit i_Voc values of >730 mV with corresponding Joe values of <5 fA/cm². These are among the best-reported values for p-type poly-Si/SiO₂ contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO₂ interface in agreement with its known high diffusivity in SiO₂. This lack of Ga pileup may imply fewer dopant-related defects in the SiO₂, compared with B dopants, and account for the excellent passivation.

Authors:

^[1]; Lee, Benjamin G. ^[1]; Fogel, Derek ^[1]; Nemeth, William ^[1]; LaSalvia, Vincenzo ^[1]; Theingi, San ^[1]; Page, Matthew ^[1]; Young, Matthew ^[1]; Perkins, Craig ^[1]; Stradins, Paul ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: 2017-09-26

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S), SunShot National Laboratory Multiyear Partnership (SuNLaMP); USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1406184

Report Number(s):: NREL/JA-5J00-67872
Journal ID: ISSN 2156-3381

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Journal of Photovoltaics

Additional Journal Information:: Journal Volume: 7; Journal Issue: 6; Journal ID: ISSN 2156-3381

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; passivated contacts; silicon; solar cells; gallium; implied open circuit voltage

Citation Formats


                    Young, David L., Lee, Benjamin G., Fogel, Derek, Nemeth, William, LaSalvia, Vincenzo, Theingi, San, Page, Matthew, Young, Matthew, Perkins, Craig, and Stradins, Paul. Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV.  United States: N. p., 2017. 
Web.  doi:10.1109/JPHOTOV.2017.2748422.

Copy to clipboard


                    Young, David L., Lee, Benjamin G., Fogel, Derek, Nemeth, William, LaSalvia, Vincenzo, Theingi, San, Page, Matthew, Young, Matthew, Perkins, Craig, & Stradins, Paul. Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV.  United States.  https://doi.org/10.1109/JPHOTOV.2017.2748422

Copy to clipboard


                    Young, David L., Lee, Benjamin G., Fogel, Derek, Nemeth, William, LaSalvia, Vincenzo, Theingi, San, Page, Matthew, Young, Matthew, Perkins, Craig, and Stradins, Paul. Tue .  
"Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV".  United States.  https://doi.org/10.1109/JPHOTOV.2017.2748422.  https://www.osti.gov/servlets/purl/1406184.

Copy to clipboard


                    
@article{osti_1406184,

  title        = {Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV},

  author       = {Young, David L. and Lee, Benjamin G. and Fogel, Derek and Nemeth, William and LaSalvia, Vincenzo and Theingi, San and Page, Matthew and Young, Matthew and Perkins, Craig and Stradins, Paul},

  abstractNote = {Here, we form gallium-doped poly-Si:Ga/SiO2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al2O3, the contacts exhibit iVoc values of >730 mV with corresponding Joe values of <5 fA/cm2. These are among the best-reported values for p-type poly-Si/SiO2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO2 interface in agreement with its known high diffusivity in SiO2. This lack of Ga pileup may imply fewer dopant-related defects in the SiO2, compared with B dopants, and account for the excellent passivation.},

  doi          = {10.1109/JPHOTOV.2017.2748422},

  journal      = {IEEE Journal of Photovoltaics},

  number       = 6,

  volume       = 7,

  place        = {United States},

  year         = {2017},

  month        = {9}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1109/JPHOTOV.2017.2748422

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 29 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referencing / citing this record:

Screen printed, large area bifacial N-type back junction silicon solar cells with selective phosphorus front surface field and boron doped poly-Si/SiO _x passivated rear emitter
journal, December 2018

Ok, Young-Woo; Tam, Andrew M.; Huang, Ying-Yuan
Applied Physics Letters, Vol. 113, Issue 26
DOI: 10.1063/1.5059559

Similar Records in DOE PAGES and OSTI.GOV collections:

Ultrathin silicon oxide prepared by in-line plasma-assisted N₂O oxidation (PANO) and the application for n-type polysilicon passivated contact

Journal Article Huang, Yuqing ; Liao, Mingdun ; Wang, Zhixue ; ... - Solar Energy Materials and Solar Cells

We develop a plasma-assisted nitrous-oxide (N₂O) gas oxidation (PANO) method to prepare the ultrathin silicon oxide (SiO_x) for polysilicon (poly-Si) passivated contact. The effects of preparation conditions, including the substrate temperature, processing time, and plasma power, are studied. Afterwards, we integrate the PANO SiO_x into the polysilicon passivated contact and optimize the passivation and contact performances. Excellent surface passivation with the n-type poly-Si and PANO SiO_x on the n-type c-Si wafer is achieved by 880 °C annealing, which shows competitive passivation quality to the one with NASO SiO_x. Champion implied open-circuit voltage (iV_oc) and single-sided recombination saturated current (J₀) reachmore »« less
Cited by 33
https://doi.org/10.1016/j.solmat.2019.110389

Full Text Available
Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

Journal Article Young, David L. ; Nemeth, William ; LaSalvia, Vincenzo ; ... - Solar Energy Materials and Solar Cells

Here, we present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO₂/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm^-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures (~100 nm thick) grownmore »« less
Cited by 30
https://doi.org/10.1016/j.solmat.2016.05.044

Full Text Available
Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

Conference Lima Salles, Caroline ; Nemeth, William ; Guthrey, Harvey ; ...

Polysilicon on silicon oxide (poly-Si/SiO x ) passivating contacts with predominant charge-carrier transport via pinholes were prepared with room temperature metal-assisted chemical etching. Pinhole areal densities in the range of 2.8 x 10^4 to 4.5 x 10^7 cm^-2 were imaged by SEM. Contact resistivity of 32 m-ohm-cm^2 and implied open circuit voltage of 729 mV were obtained for symmetric n+ poly-Si/SiOx grown onto randomly textured n-Cz. We also show preliminary data pertaining boron-doped polysilicon on nitride/oxide passivating contacts, with which we achieved implied open circuit voltage above 730 mV and recombination current of 0.2 fA/cm^2.
https://doi.org/10.1109/PVSC43889.2021.9518647
Non-Equilibrium Doping of Poly-Si:Ga/SiOx Passivating Contacts Solar Cells

Conference Chen, Kejun ; Napolitani, Enrico ; Theingi, San ; ...

In this contribution, we show that Ga-hyperdoped poly-Si/SiOx contacts are realized by pulsed laser annealing and post-hydrogenation. The motivation behind this work is to improve the inferior performance of boron-doped poly- Si/SiOx contacts when compared to the phosphorus-doped contacts. Here we used Ga as a novel p-type dopant to replace B, as B is known to accumulate at the interface between the oxide and the crystalline silicon and cause recombination. Due to a high diffusivity of Ga in oxide and a much higher segregation coefficient (Si:SiOx), Ga is shown to be immune to the oxide pileup phenomenon. However, Ga hasmore »« less
https://doi.org/10.1063/5.0093805
Pushing the efficiency limit of low-cost, industrially relevant Si solar cells to > 22.5% by advancing cell structures and technology innovations (Final Report)

Technical Report Rohatgi, Ajeet ; Upadhyaya, Ajay D ; Ok, Young Woo ; ...

The overall objective of this program is to achieve ~23% bifacial n-type cell efficiencies by developing and implementing optimized homogeneous or selective boron (B) emitter on front and tunnel oxide passivated contact (TOPCon) on rear side, in combination with advanced fine-line screen-printing metallization with floating busbars. During this research project, first we developed a technology roadmap to drive the 21% n-PERT cell efficiency from 21% to 23% by transforming the cell design to n-TOPCon and establishing the requirements for each layer, including B emitter, rear n-TOPCon, n-base Si and screen-printed contacts. Next, consistent with our roadmap, we developed advanced homogeneousmore »« less
https://doi.org/10.2172/1834738

Full Text Available

Similar Records

Title: Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV

Abstract

Citation Formats

Screen printed, large area bifacial N-type back junction silicon solar cells with selective phosphorus front surface field and boron doped poly-Si/SiO x passivated rear emitter journal, December 2018

Title: Gallium-Doped Poly-Si:Ga/SiO₂ Passivated Emitters to n-Cz Wafers With iV_oc >730 mV

Screen printed, large area bifacial N-type back junction silicon solar cells with selective phosphorus front surface field and boron doped poly-Si/SiO _x passivated rear emitter
journal, December 2018