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This content will become publicly available on September 26, 2018

Title: Gallium-Doped Poly-Si:Ga/SiO 2 Passivated Emitters to n-Cz Wafers With iV oc >730 mV

Here, we form gallium-doped poly-Si:Ga/SiO 2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al 2O 3, the contacts exhibit i Voc values of >730 mV with corresponding Joe values of <5 fA/cm 2. These are among the best-reported values for p-type poly-Si/SiO 2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO 2 interface in agreement with its known high diffusivity in SiO 2. This lack of Ga pileup may imply fewer dopant-related defects in the SiO 2, compared with B dopants, and account for the excellent passivation.
Authors:
ORCiD logo [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5J00-67872
Journal ID: ISSN 2156-3381
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 7; Journal Issue: 6; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S), SunShot National Laboratory Multiyear Partnership (SuNLaMP); USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; passivated contacts; silicon; solar cells; gallium; implied open circuit voltage
OSTI Identifier:
1406184