Metastable defect response in CZTSSe from admittance spectroscopy

Koeper, Mark J.; Hages, Charles J.; Li, Jian V.; Levi, Dean; Agrawal, Rakesh

doi:10.1063/1.4996283

Title: Metastable defect response in CZTSSe from admittance spectroscopy

Abstract

Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se)₄ where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the device measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.

Authors:

Koeper, Mark J. ^[1]; Hages, Charles J. ^[2]; Li, Jian V. ^[3]; Levi, Dean ^[4]; Agrawal, Rakesh ^[1]

Purdue Univ., West Lafayette, IN (United States)
Helmholtz-Zentrum Berlin (HZB), (Germany)
Texas State Univ., San Marco, TX (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: 2017-10-02

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1405282

Alternate Identifier(s):: OSTI ID: 1398122

Report Number(s):: NREL/JA-5J00-70373
Journal ID: ISSN 0003-6951

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 111; Journal Issue: 14; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; spectroscopy; garnet; activation energies; chemical kinetics; dielectrics

Citation Formats


                    Koeper, Mark J., Hages, Charles J., Li, Jian V., Levi, Dean, and Agrawal, Rakesh. Metastable defect response in CZTSSe from admittance spectroscopy.  United States: N. p., 2017. 
Web.  doi:10.1063/1.4996283.

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                    Koeper, Mark J., Hages, Charles J., Li, Jian V., Levi, Dean, & Agrawal, Rakesh. Metastable defect response in CZTSSe from admittance spectroscopy.  United States.  https://doi.org/10.1063/1.4996283

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                    Koeper, Mark J., Hages, Charles J., Li, Jian V., Levi, Dean, and Agrawal, Rakesh. Mon .  
"Metastable defect response in CZTSSe from admittance spectroscopy".  United States.  https://doi.org/10.1063/1.4996283.  https://www.osti.gov/servlets/purl/1405282.

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@article{osti_1405282,

  title        = {Metastable defect response in CZTSSe from admittance spectroscopy},

  author       = {Koeper, Mark J. and Hages, Charles J. and Li, Jian V. and Levi, Dean and Agrawal, Rakesh},

  abstractNote = {Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se)4 where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the device measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.},

  doi          = {10.1063/1.4996283},

  journal      = {Applied Physics Letters},

  number       = 14,

  volume       = 111,

  place        = {United States},

  year         = {2017},

  month        = {10}

}

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Works referenced in this record:

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Works referencing / citing this record:

Influences of buffer material and fabrication atmosphere on the electrical properties of CdTe solar cells
journal, September 2019

Awni, Rasha A.; Li, Deng‐Bing; Song, Zhaoning
Progress in Photovoltaics: Research and Applications, Vol. 27, Issue 12
DOI: 10.1002/pip.3192

The Effects of Hydrogen Iodide Back Surface Treatment on CdTe Solar Cells
journal, January 2019

Awni, Rasha A.; Li, Deng-Bing; Grice, Corey R.
Solar RRL, Vol. 3, Issue 3
DOI: 10.1002/solr.201800304

The electrical and optical properties of kesterites
journal, August 2019

Grossberg, Maarja; Krustok, Jüri; Hages, Charles J.
Journal of Physics: Energy, Vol. 1, Issue 4
DOI: 10.1088/2515-7655/ab29a0

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Title: Metastable defect response in CZTSSe from admittance spectroscopy

Abstract

Citation Formats

Electronic properties of the Cu 2 ZnSn(Se,S) 4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods journal, June 2012

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Kesterite Thin-Film Solar Cells: Advances in Materials Modelling of Cu2ZnSnS4 journal, March 2012

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Device comparison of champion nanocrystal-ink based CZTSSe and CIGSSe solar cells: Capacitance spectroscopy conference, June 2013

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Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se 2 based heterojunctions journal, October 1996

Device limitations and light-soaking effects in CZTSSe and CZTGeSSe conference, June 2012

Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials journal, May 2017

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9.0% efficient Cu ₂ ZnSn(S,Se) ₄ solar cells from selenized nanoparticle inks : 9.2% efficient Cu
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Characterization of metastabilities in Cu(In,Ga)Se ₂ thin-film solar cells by capacitance and current-voltage spectroscopy
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Characterization of nanocrystal-ink based CZTSSe and CIGSSe solar cells using voltage-dependent admittance spectroscopy
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Generalized quantum efficiency analysis for non-ideal solar cells: Case of Cu ₂ ZnSnSe ₄
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Deep Defects in ${Cu}_{2} ZnSn {(S, Se)}_{4}$ Solar Cells with Varying Se Content
journal, February 2016

Kesterite Thin-Film Solar Cells: Advances in Materials Modelling of Cu2ZnSnS4
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Effects of sodium incorporation in Co-evaporated Cu ₂ ZnSnSe ₄ thin-film solar cells
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Meyer–Neldel behavior of deep level parameters in heterojunctions to Cu(In,Ga)(S,Se) ₂
journal, November 1996

Device comparison of champion nanocrystal-ink based CZTSSe and CIGSSe solar cells: Capacitance spectroscopy
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