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Title: Metastable defect response in CZTSSe from admittance spectroscopy

Abstract

Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se) 4 where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the device measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.

Authors:
 [1];  [2];  [3];  [4];  [1]
  1. Purdue Univ., West Lafayette, IN (United States)
  2. Helmholtz-Zentrum Berlin (HZB), (Germany)
  3. Texas State Univ., San Marco, TX (United States)
  4. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1405282
Alternate Identifier(s):
OSTI ID: 1398122
Report Number(s):
NREL/JA-5J00-70373
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; spectroscopy; garnet; activation energies; chemical kinetics; dielectrics

Citation Formats

Koeper, Mark J., Hages, Charles J., Li, Jian V., Levi, Dean, and Agrawal, Rakesh. Metastable defect response in CZTSSe from admittance spectroscopy. United States: N. p., 2017. Web. doi:10.1063/1.4996283.
Koeper, Mark J., Hages, Charles J., Li, Jian V., Levi, Dean, & Agrawal, Rakesh. Metastable defect response in CZTSSe from admittance spectroscopy. United States. doi:10.1063/1.4996283.
Koeper, Mark J., Hages, Charles J., Li, Jian V., Levi, Dean, and Agrawal, Rakesh. Mon . "Metastable defect response in CZTSSe from admittance spectroscopy". United States. doi:10.1063/1.4996283. https://www.osti.gov/servlets/purl/1405282.
@article{osti_1405282,
title = {Metastable defect response in CZTSSe from admittance spectroscopy},
author = {Koeper, Mark J. and Hages, Charles J. and Li, Jian V. and Levi, Dean and Agrawal, Rakesh},
abstractNote = {Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se)4 where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the device measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.},
doi = {10.1063/1.4996283},
journal = {Applied Physics Letters},
number = 14,
volume = 111,
place = {United States},
year = {2017},
month = {10}
}

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