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Title: Electronic Structure of the Metastable Epitaxial Rock-Salt SnSe { 111 } Topological Crystalline Insulator

Abstract

Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe {111} thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, is used to demonstrate that a rock-salt SnSe {111} thin film epitaxially grown on Bi 2Se 3 has a stable Sn-terminated surface. These observations are supported by low-energy electron diffraction (LEED) intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe {111} thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe {111} thin film is shown to yield a high Fermi velocity, 0.50 x 10 6 m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration.

Authors:
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Publication Date:
Research Org.:
Columbia Univ., New York, NY (United States); Cornell Univ., Ithaca, NY (United States); Chinese Academy of Sciences (CAS), Beijing (China); Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF); National Natural Science Foundation of China (NNSFC); Ministry of Science and Technology of China; Chinese Academy of Sciences
OSTI Identifier:
1404750
Alternate Identifier(s):
OSTI ID: 1407471
Report Number(s):
BNL-114494-2017-JA
Journal ID: ISSN 2160-3308; PRXHAE; 041020
Grant/Contract Number:  
SC0012704; FG02-04ER46157; 1433490; DMR-1400432; DMR-1120296; DMR-1408838; DMR-1506119; DMR-1006863; 11274381; 2015CB921300; 2013CB921700; 11474340; 11234014; XDB07000000
Resource Type:
Published Article
Journal Name:
Physical Review. X
Additional Journal Information:
Journal Name: Physical Review. X Journal Volume: 7 Journal Issue: 4; Journal ID: ISSN 2160-3308
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; electronic structure; first-principles calculations; surface & interfacial phenomena; surface states; topological materials

Citation Formats

Jin, Wencan, Vishwanath, Suresh, Liu, Jianpeng, Kong, Lingyuan, Lou, Rui, Dai, Zhongwei, Sadowski, Jerzy T., Liu, Xinyu, Lien, Huai-Hsun, Chaney, Alexander, Han, Yimo, Cao, Michael, Ma, Junzhang, Qian, Tian, Wang, Shancai, Dobrowolska, Malgorzata, Furdyna, Jacek, Muller, David A., Pohl, Karsten, Ding, Hong, Dadap, Jerry I., Xing, Huili Grace, and Osgood, Richard M. Electronic Structure of the Metastable Epitaxial Rock-Salt SnSe { 111 } Topological Crystalline Insulator. United States: N. p., 2017. Web. doi:10.1103/PhysRevX.7.041020.
Jin, Wencan, Vishwanath, Suresh, Liu, Jianpeng, Kong, Lingyuan, Lou, Rui, Dai, Zhongwei, Sadowski, Jerzy T., Liu, Xinyu, Lien, Huai-Hsun, Chaney, Alexander, Han, Yimo, Cao, Michael, Ma, Junzhang, Qian, Tian, Wang, Shancai, Dobrowolska, Malgorzata, Furdyna, Jacek, Muller, David A., Pohl, Karsten, Ding, Hong, Dadap, Jerry I., Xing, Huili Grace, & Osgood, Richard M. Electronic Structure of the Metastable Epitaxial Rock-Salt SnSe { 111 } Topological Crystalline Insulator. United States. doi:10.1103/PhysRevX.7.041020.
Jin, Wencan, Vishwanath, Suresh, Liu, Jianpeng, Kong, Lingyuan, Lou, Rui, Dai, Zhongwei, Sadowski, Jerzy T., Liu, Xinyu, Lien, Huai-Hsun, Chaney, Alexander, Han, Yimo, Cao, Michael, Ma, Junzhang, Qian, Tian, Wang, Shancai, Dobrowolska, Malgorzata, Furdyna, Jacek, Muller, David A., Pohl, Karsten, Ding, Hong, Dadap, Jerry I., Xing, Huili Grace, and Osgood, Richard M. Wed . "Electronic Structure of the Metastable Epitaxial Rock-Salt SnSe { 111 } Topological Crystalline Insulator". United States. doi:10.1103/PhysRevX.7.041020.
@article{osti_1404750,
title = {Electronic Structure of the Metastable Epitaxial Rock-Salt SnSe { 111 } Topological Crystalline Insulator},
author = {Jin, Wencan and Vishwanath, Suresh and Liu, Jianpeng and Kong, Lingyuan and Lou, Rui and Dai, Zhongwei and Sadowski, Jerzy T. and Liu, Xinyu and Lien, Huai-Hsun and Chaney, Alexander and Han, Yimo and Cao, Michael and Ma, Junzhang and Qian, Tian and Wang, Shancai and Dobrowolska, Malgorzata and Furdyna, Jacek and Muller, David A. and Pohl, Karsten and Ding, Hong and Dadap, Jerry I. and Xing, Huili Grace and Osgood, Richard M.},
abstractNote = {Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe {111} thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, is used to demonstrate that a rock-salt SnSe {111} thin film epitaxially grown on Bi2Se3 has a stable Sn-terminated surface. These observations are supported by low-energy electron diffraction (LEED) intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe {111} thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe {111} thin film is shown to yield a high Fermi velocity, 0.50 x 106 m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration.},
doi = {10.1103/PhysRevX.7.041020},
journal = {Physical Review. X},
number = 4,
volume = 7,
place = {United States},
year = {2017},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
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DOI: 10.1103/PhysRevX.7.041020

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