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Title: Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9

Journal Article · · Journal of Applied Physics
DOI: https://doi.org/10.1063/1.4997947 · OSTI ID:1402682
 [1];  [2];  [3];  [4];  [5]
  1. Idaho National Lab. (INL), Idaho Falls, ID (United States)
  2. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
  3. Bulgarian Academy of Sciences, Sofia (Bulgaria). Inst. of Optical Materials and Technology
  4. Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics
  5. Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

In this work, we have investigated the weak antilocalization (WAL) effect in the p-type Bi2Se2.1Te0.9 topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dominate the magnetoconductance in the Bi2Se2.1Te0.9 crystal. We have calculated magnetoconductance per conduction channel and applied the Hikami-Larkin-Nagaoka formula to determine the physical parameters that characterize the WAL effect. The number of conduction channels and the phase coherence length do not change with temperature up to T = 5 K. In addition, the sample shows a large positive magnetoresistance that reaches 1900% under a magnetic field of 35 T at T = 0.33 K with no sign of saturation. The magnetoresistance value decreases with both increasing temperature and tilt angle of the sample surface with respect to the magnetic field. The large magnetoresistance of topological insulators can be utilized in future technology such as sensors and memory devices.

Research Organization:
Idaho National Laboratory (INL), Idaho Falls, ID (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR); T.L.L. Temple Foundation; John J. and Rebecca B. Moores Endowment Fund; Bulgaria National Science Fund (BNSF); National Science Foundation (NSF)
Grant/Contract Number:
AC07-05ID14517; FA9550-15-1-0236; DN 08/9; DMR-1157490
OSTI ID:
1402682
Alternate ID(s):
OSTI ID: 1399058
Report Number(s):
INL/JOU-17-42598
Journal Information:
Journal of Applied Physics, Vol. 122, Issue 14; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (34)

Weak Antilocalization Effect and Noncentrosymmetric Superconductivity in a Topologically Nontrivial Semimetal LuPdBi journal July 2014
Weak antilocalization in topological insulator Bi 2 Te 3 microflakes journal January 2013
Topological insulators and superconductors journal October 2011
Observation of Dirac Holes and Electrons in a Topological Insulator journal June 2011
Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi 2 Te 3 topological insulator journal May 2017
Large magnetoresistance and Fermi surface study of Sb 2 Se 2 Te single crystal journal September 2017
Quantum Interference in Macroscopic Crystals of Nonmetallic Bi2Se3 journal December 2009
Magnetic Oscillations in Metals book October 2011
2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes journal June 2016
Topological Crystalline Insulators and Topological Superconductors: From Concepts to Materials journal March 2015
Colloquium: Topological insulators journal November 2010
Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 journal June 2009
Simultaneous detection of quantum oscillations from bulk and topological surface states in metallic journal April 2017
Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi 2 Te 3 and Sb 2 Te 3 journal September 2009
Observation of a large-gap topological-insulator class with a single Dirac cone on the surface journal May 2009
Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi2Te3 journal July 2010
Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System journal February 1980
Topological Insulator Materials journal October 2013
Shubnikov–de Haas oscillations from topological surface states of metallic Bi 2 Se 2.1 Te 0.9 journal December 2014
p-type Bi2Se3 for topological insulator and low-temperature thermoelectric applications journal May 2009
Room Temperature Giant and Linear Magnetoresistance in Topological Insulator Bi 2 Te 3 Nanosheets journal June 2012
Surface Shubnikov–de Haas oscillations and nonzero Berry phases of the topological hole conduction in Tl 1 − x Bi 1 + x Se 2 journal November 2014
Thickness-Independent Transport Channels in Topological Insulator Bi 2 Se 3 Thin Films journal September 2012
Crystal structure and chemistry of topological insulators journal January 2013
Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te journal October 2012
Impurity Effect on Weak Antilocalization in the Topological Insulator Bi 2 Te 3 journal April 2011
Quantum oscillations in metallic Sb 2 Te 2 Se topological insulator journal February 2017
Angular-dependent oscillations of the magnetoresistance in Bi 2 Se 3 due to the three-dimensional bulk Fermi surface journal May 2010
Two-dimensional surface state in the quantum limit of a topological insulator journal November 2010
Structural and electronic properties of highly doped topological insulator Bi 2 Se 3 crystals journal December 2012
Large magnetoresistance in high mobility topological insulator Bi 2 Se 3 journal July 2013
An isolated Dirac cone on the surface of ternary tetradymite-like topological insulators journal September 2011
Evidence of surface transport and weak antilocalization in a single crystal of the Bi 2 Te 2 Se topological insulator journal October 2014
Magneto-resistance up to 60 Tesla in topological insulator Bi 2 Te 3 thin films journal November 2012

Cited By (2)

Oscillating planar Hall response in bulk crystal of topological insulator Sn doped Bi 1.1 Sb 0.9 Te 2 S journal July 2018
Evidence of a 2D Fermi surface due to surface states in a p -type metallic Bi 2 Te 3 journal April 2018