Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9

Shrestha, K.; Graf, D.; Marinova, V.; Lorenz, B.; Chu, C. W.

doi:10.1063/1.4997947

Title: Weak antilocalization effect due to topological surface states in Bi₂Se_2.1Te_0.9

Journal Article · 11 October 2017 · Journal of Applied Physics

DOI: https://doi.org/10.1063/1.4997947 · OSTI ID:1402682

Shrestha, K. ^[1]; Graf, D. ^[2]; Marinova, V. ^[3]; Lorenz, B. ^[4]; Chu, C. W. ^[5]

Idaho National Lab. (INL), Idaho Falls, ID (United States)
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Bulgarian Academy of Sciences, Sofia (Bulgaria). Inst. of Optical Materials and Technology
Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics
Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

In this work, we have investigated the weak antilocalization (WAL) effect in the p-type Bi₂Se_2.1Te_0.9 topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dominate the magnetoconductance in the Bi₂Se_2.1Te_0.9 crystal. We have calculated magnetoconductance per conduction channel and applied the Hikami-Larkin-Nagaoka formula to determine the physical parameters that characterize the WAL effect. The number of conduction channels and the phase coherence length do not change with temperature up to T = 5 K. In addition, the sample shows a large positive magnetoresistance that reaches 1900% under a magnetic field of 35 T at T = 0.33 K with no sign of saturation. The magnetoresistance value decreases with both increasing temperature and tilt angle of the sample surface with respect to the magnetic field. The large magnetoresistance of topological insulators can be utilized in future technology such as sensors and memory devices.

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Research Organization:: Idaho National Laboratory (INL), Idaho Falls, ID (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR); T.L.L. Temple Foundation; John J. and Rebecca B. Moores Endowment Fund; Bulgaria National Science Fund (BNSF); National Science Foundation (NSF)

Grant/Contract Number:: AC07-05ID14517; FA9550-15-1-0236; DN 08/9; DMR-1157490

OSTI ID:: 1402682

Alternate ID(s):: OSTI ID: 1399058

Report Number(s):: INL/JOU-17-42598

Journal Information:: Journal of Applied Physics, Vol. 122, Issue 14; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (34)

Weak Antilocalization Effect and Noncentrosymmetric Superconductivity in a Topologically Nontrivial Semimetal LuPdBi Xu, Guizhou; Wang, Wenhong; Zhang, Xiaoming Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep05709	journal	July 2014
Weak antilocalization in topological insulator Bi 2 Te 3 microflakes Chiu, Shao-Pin; Lin, Juhn-Jong Physical Review B, Vol. 87, Issue 3 https://doi.org/10.1103/PhysRevB.87.035122	journal	January 2013
Topological insulators and superconductors Qi, Xiao-Liang; Zhang, Shou-Cheng Reviews of Modern Physics, Vol. 83, Issue 4 https://doi.org/10.1103/RevModPhys.83.1057	journal	October 2011
Observation of Dirac Holes and Electrons in a Topological Insulator Taskin, A. A.; Ren, Zhi; Sasaki, Satoshi Physical Review Letters, Vol. 107, Issue 1 https://doi.org/10.1103/PhysRevLett.107.016801	journal	June 2011
Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi 2 Te 3 topological insulator Shrestha, K.; Chou, M.; Graf, D. Physical Review B, Vol. 95, Issue 19 https://doi.org/10.1103/PhysRevB.95.195113	journal	May 2017
Large magnetoresistance and Fermi surface study of Sb ₂ Se ₂ Te single crystal Shrestha, K.; Marinova, V.; Graf, D. Journal of Applied Physics, Vol. 122, Issue 12 https://doi.org/10.1063/1.4998575	journal	September 2017
Quantum Interference in Macroscopic Crystals of Nonmetallic Bi2Se3 Checkelsky, J. G.; Hor, Y. S.; Liu, M.-H. Physical Review Letters, Vol. 103, Issue 24, Article No. 246601 https://doi.org/10.1103/PhysRevLett.103.246601	journal	December 2009
Magnetic Oscillations in Metals Shoenberg, D. https://doi.org/10.1017/CBO9780511897870	book	October 2011
2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes Chiatti, Olivio; Riha, Christian; Lawrenz, Dominic Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep27483	journal	June 2016
Topological Crystalline Insulators and Topological Superconductors: From Concepts to Materials Ando, Yoichi; Fu, Liang Annual Review of Condensed Matter Physics, Vol. 6, Issue 1 https://doi.org/10.1146/annurev-conmatphys-031214-014501	journal	March 2015
Colloquium: Topological insulators Hasan, M. Z.; Kane, C. L. Reviews of Modern Physics, Vol. 82, Issue 4, p. 3045-3067 https://doi.org/10.1103/RevModPhys.82.3045	journal	November 2010
Experimental Realization of a Three-Dimensional Topological Insulator, Bi₂Te₃ Chen, Y. L.; Analytis, J. G.; Chu, J.-H. Science, Vol. 325, Issue 5937, p. 178-181 https://doi.org/10.1126/science.1173034	journal	June 2009
Simultaneous detection of quantum oscillations from bulk and topological surface states in metallic Shrestha, Keshav; Graf, David E.; Marinova, Vera Philosophical Magazine, Vol. 97, Issue 20 https://doi.org/10.1080/14786435.2017.1314563	journal	April 2017
Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi 2 Te 3 and Sb 2 Te 3 Hsieh, D.; Xia, Y.; Qian, D. Physical Review Letters, Vol. 103, Issue 14 https://doi.org/10.1103/PhysRevLett.103.146401	journal	September 2009
Observation of a large-gap topological-insulator class with a single Dirac cone on the surface Xia, Y.; Qian, D.; Hsieh, D. Nature Physics, Vol. 5, Issue 6, p. 398-402 https://doi.org/10.1038/nphys1274	journal	May 2009
Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi₂Te₃ Qu, D.-X.; Hor, Y. S.; Xiong, J. Science, Vol. 329, Issue 5993, p. 821-824 https://doi.org/10.1126/science.1189792	journal	July 2010
Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System Hikami, S.; Larkin, A. I.; Nagaoka, Y. Progress of Theoretical Physics, Vol. 63, Issue 2 https://doi.org/10.1143/PTP.63.707	journal	February 1980
Topological Insulator Materials Ando, Yoichi Journal of the Physical Society of Japan, Vol. 82, Issue 10, Article No. 102001 https://doi.org/10.7566/JPSJ.82.102001	journal	October 2013
Shubnikov–de Haas oscillations from topological surface states of metallic Bi 2 Se 2.1 Te 0.9 Shrestha, Keshav; Marinova, Vera; Lorenz, Bernd Physical Review B, Vol. 90, Issue 24 https://doi.org/10.1103/PhysRevB.90.241111	journal	December 2014
p-type Bi2Se3 for topological insulator and low-temperature thermoelectric applications Hor, Y. S.; Richardella, A.; Roushan, P. Physical Review B, Vol. 79, Issue 19, Article No. 195208 https://doi.org/10.1103/PhysRevB.79.195208	journal	May 2009
Room Temperature Giant and Linear Magnetoresistance in Topological Insulator Bi 2 Te 3 Nanosheets Wang, Xiaolin; Du, Yi; Dou, Shixue Physical Review Letters, Vol. 108, Issue 26 https://doi.org/10.1103/PhysRevLett.108.266806	journal	June 2012
Surface Shubnikov–de Haas oscillations and nonzero Berry phases of the topological hole conduction in Tl 1 − x Bi 1 + x Se 2 Eguchi, G.; Kuroda, K.; Shirai, K. Physical Review B, Vol. 90, Issue 20 https://doi.org/10.1103/PhysRevB.90.201307	journal	November 2014
Thickness-Independent Transport Channels in Topological Insulator Bi 2 Se 3 Thin Films Bansal, Namrata; Kim, Yong Seung; Brahlek, Matthew Physical Review Letters, Vol. 109, Issue 11 https://doi.org/10.1103/PhysRevLett.109.116804	journal	September 2012
Crystal structure and chemistry of topological insulators Cava, R. J.; Ji, Huiwen; Fuccillo, M. K. Journal of Materials Chemistry C, Vol. 1, Issue 19 https://doi.org/10.1039/c3tc30186a	journal	January 2013
Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te Bao, Lihong; He, Liang; Meyer, Nicholas Scientific Reports, Vol. 2, Issue 1 https://doi.org/10.1038/srep00726	journal	October 2012
Impurity Effect on Weak Antilocalization in the Topological Insulator Bi 2 Te 3 He, Hong-Tao; Wang, Gan; Zhang, Tao Physical Review Letters, Vol. 106, Issue 16 https://doi.org/10.1103/PhysRevLett.106.166805	journal	April 2011
Quantum oscillations in metallic Sb 2 Te 2 Se topological insulator Shrestha, K.; Marinova, V.; Graf, D. Physical Review B, Vol. 95, Issue 7 https://doi.org/10.1103/PhysRevB.95.075102	journal	February 2017
Angular-dependent oscillations of the magnetoresistance in Bi 2 Se 3 due to the three-dimensional bulk Fermi surface Eto, Kazuma; Ren, Zhi; Taskin, A. A. Physical Review B, Vol. 81, Issue 19 https://doi.org/10.1103/PhysRevB.81.195309	journal	May 2010
Two-dimensional surface state in the quantum limit of a topological insulator Analytis, James G.; McDonald, Ross D.; Riggs, Scott C. Nature Physics, Vol. 6, Issue 12 https://doi.org/10.1038/nphys1861	journal	November 2010
Structural and electronic properties of highly doped topological insulator Bi ₂ Se ₃ crystals Cao, Helin; Xu, Suyang; Miotkowski, Ireneusz physica status solidi (RRL) - Rapid Research Letters, Vol. 7, Issue 1-2 https://doi.org/10.1002/pssr.201206457	journal	December 2012
Large magnetoresistance in high mobility topological insulator Bi ₂ Se ₃ Yan, Yuan; Wang, Li-Xian; Yu, Da-Peng Applied Physics Letters, Vol. 103, Issue 3 https://doi.org/10.1063/1.4813824	journal	July 2013
An isolated Dirac cone on the surface of ternary tetradymite-like topological insulators Lin, H.; Das, Tanmoy; Wray, L. A. New Journal of Physics, Vol. 13, Issue 9 https://doi.org/10.1088/1367-2630/13/9/095005	journal	September 2011
Evidence of surface transport and weak antilocalization in a single crystal of the Bi 2 Te 2 Se topological insulator Shekhar, Chandra; ViolBarbosa, C. E.; Yan, Binghai Physical Review B, Vol. 90, Issue 16 https://doi.org/10.1103/PhysRevB.90.165140	journal	October 2014
Magneto-resistance up to 60 Tesla in topological insulator Bi ₂ Te ₃ thin films Zhang, S. X.; McDonald, R. D.; Shekhter, A. Applied Physics Letters, Vol. 101, Issue 20 https://doi.org/10.1063/1.4766739	journal	November 2012

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Evidence of a 2D Fermi surface due to surface states in a p -type metallic Bi ₂ Te ₃ Shrestha, K.; Marinova, V.; Lorenz, B. Journal of Physics: Condensed Matter, Vol. 30, Issue 18 https://doi.org/10.1088/1361-648x/aab6ca	journal	April 2018

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Title: Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9

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Title: Weak antilocalization effect due to topological surface states in Bi₂Se_2.1Te_0.9