Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9

Shrestha, K.; Graf, D.; Marinova, V.; Lorenz, B.; Chu, C. W.

doi:10.1063/1.4997947

Title: Weak antilocalization effect due to topological surface states in Bi₂Se_2.1Te_0.9

Abstract

In this work, we have investigated the weak antilocalization (WAL) effect in the p-type Bi₂Se_2.1Te_0.9 topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dominate the magnetoconductance in the Bi₂Se_2.1Te_0.9 crystal. We have calculated magnetoconductance per conduction channel and applied the Hikami-Larkin-Nagaoka formula to determine the physical parameters that characterize the WAL effect. The number of conduction channels and the phase coherence length do not change with temperature up to T = 5 K. In addition, the sample shows a large positive magnetoresistance that reaches 1900% under a magnetic field of 35 T at T = 0.33 K with no sign of saturation. The magnetoresistance value decreases with both increasing temperature and tilt angle of the sample surface with respect to the magnetic field. The large magnetoresistance of topological insulators can be utilized in future technology such as sensors and memory devices.

Authors:

Shrestha, K. ^[1]; Graf, D. ^[2]; Marinova, V. ^[3]; Lorenz, B. ^[4]; Chu, C. W. ^[5]

Idaho National Lab. (INL), Idaho Falls, ID (United States)
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Bulgarian Academy of Sciences, Sofia (Bulgaria). Inst. of Optical Materials and Technology
Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics
Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Publication Date:: 2017-10-11

Research Org.:: Idaho National Lab. (INL), Idaho Falls, ID (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR); T.L.L. Temple Foundation; John J. and Rebecca B. Moores Endowment Fund; Bulgaria National Science Fund (BNSF); National Science Foundation (NSF)

OSTI Identifier:: 1402682

Alternate Identifier(s):: OSTI ID: 1399058

Report Number(s):: INL/JOU-17-42598
Journal ID: ISSN 0021-8979

Grant/Contract Number:: AC07-05ID14517; FA9550-15-1-0236; DN 08/9; DMR-1157490

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 122; Journal Issue: 14; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; Weak Antilocalization; Magnetoresistance; Topologi; crystallography; electronic transport; magnetic ordering; transition metals; hall mobility; classical electromagnetism; Fermi surface

Citation Formats


                    Shrestha, K., Graf, D., Marinova, V., Lorenz, B., and Chu, C. W. Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9.  United States: N. p., 2017. 
Web.  doi:10.1063/1.4997947.

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                    Shrestha, K., Graf, D., Marinova, V., Lorenz, B., & Chu, C. W. Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9.  United States.  https://doi.org/10.1063/1.4997947

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                    Shrestha, K., Graf, D., Marinova, V., Lorenz, B., and Chu, C. W. Wed .  
"Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9".  United States.  https://doi.org/10.1063/1.4997947.  https://www.osti.gov/servlets/purl/1402682.

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@article{osti_1402682,

  title        = {Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9},

  author       = {Shrestha, K. and Graf, D. and Marinova, V. and Lorenz, B. and Chu, C. W.},

  abstractNote = {In this work, we have investigated the weak antilocalization (WAL) effect in the p-type Bi2Se2.1Te0.9 topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dominate the magnetoconductance in the Bi2Se2.1Te0.9 crystal. We have calculated magnetoconductance per conduction channel and applied the Hikami-Larkin-Nagaoka formula to determine the physical parameters that characterize the WAL effect. The number of conduction channels and the phase coherence length do not change with temperature up to T = 5 K. In addition, the sample shows a large positive magnetoresistance that reaches 1900% under a magnetic field of 35 T at T = 0.33 K with no sign of saturation. The magnetoresistance value decreases with both increasing temperature and tilt angle of the sample surface with respect to the magnetic field. The large magnetoresistance of topological insulators can be utilized in future technology such as sensors and memory devices.},

  doi          = {10.1063/1.4997947},

  journal      = {Journal of Applied Physics},

  number       = 14,

  volume       = 122,

  place        = {United States},

  year         = {2017},

  month        = {10}

}

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Works referencing / citing this record:

Oscillating planar Hall response in bulk crystal of topological insulator Sn doped Bi _1.1 Sb _0.9 Te ₂ S
journal, July 2018

Wu, Bin; Pan, Xing-Chen; Wu, Wenkai
Applied Physics Letters, Vol. 113, Issue 1
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Title: Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9

Abstract

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Title: Weak antilocalization effect due to topological surface states in Bi₂Se_2.1Te_0.9

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