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Title: Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi 2 Te 3 topological insulator

Abstract

Here, weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge carrier concentrations. At low charge carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large, non-saturating magnetoresistance, and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magneto-electric sensors and memory devices.

Authors:
 [1];  [2];  [3];  [4];  [5];  [6]
  1. Idaho National Lab. (INL), Idaho Falls, ID (United States)
  2. National Sun Yat-Sen Univ., Kaohsiung (Taiwan). Dept. of Materials and Optoelectronic Science
  3. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
  4. National Sun Yat-Sen Univ., Kaohsiung (Taiwan). Dept. of Physics
  5. Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics
  6. Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Idaho National Lab. (INL), Idaho Falls, ID (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Nuclear Energy (NE); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR); T. L. L. Temple Foundation; J. J. and R. Moores Endowment; National Science Foundation (NSF)
OSTI Identifier:
1402678
Alternate Identifier(s):
OSTI ID: 1355958
Report Number(s):
INL/JOU-17-41643
Journal ID: ISSN 2469-9950; PRBMDO
Grant/Contract Number:  
AC07-05ID14517; DMR-1157490; FG02-01ER45872
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 19; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; High Magnetic Fields; Magnetoresistance; Topological Insulator; Weak Antilocalization; topological materials; topological phases of matter; chalcogenides; single crystal materials

Citation Formats

Shrestha, K., Chou, M., Graf, D., Yang, H. D., Lorenz, B., and Chu, C. W. Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.195113.
Shrestha, K., Chou, M., Graf, D., Yang, H. D., Lorenz, B., & Chu, C. W. Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator. United States. doi:10.1103/PhysRevB.95.195113.
Shrestha, K., Chou, M., Graf, D., Yang, H. D., Lorenz, B., and Chu, C. W. Mon . "Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator". United States. doi:10.1103/PhysRevB.95.195113. https://www.osti.gov/servlets/purl/1402678.
@article{osti_1402678,
title = {Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator},
author = {Shrestha, K. and Chou, M. and Graf, D. and Yang, H. D. and Lorenz, B. and Chu, C. W.},
abstractNote = {Here, weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge carrier concentrations. At low charge carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large, non-saturating magnetoresistance, and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magneto-electric sensors and memory devices.},
doi = {10.1103/PhysRevB.95.195113},
journal = {Physical Review B},
number = 19,
volume = 95,
place = {United States},
year = {2017},
month = {5}
}

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