Topological-insulator-based terahertz modulator
Abstract
Three dimensional topological insulators, as a new phase of quantum matters, are characterized by an insulating gap in the bulk and a metallic state on the surface. Particularly, most of the topological insulators have narrow band gaps, and hence have promising applications in the area of terahertz optoelectronics. In this work, we experimentally demonstrate an electronically-tunable terahertz intensity modulator based on Bi1:5Sb0:5Te1:8Se1:2 single crystal, one of the most insulating topological insulators. A relative frequency-independent modulation depth of ~62% over a wide frequency range from 0.3 to 1.4 THz has been achieved at room temperature, by applying a bias current of 100 mA. The modulation in the low current regime can be further enhanced at low temperature. We propose that the extraordinarily large modulation is a consequence of thermally-activated carrier absorption in the semiconducting bulk states. Our work provides a new application of topological insulators for terahertz technology.
- Authors:
-
[1]
- Nanyang Technological Univ. (Singapore)
- National Univ. of Singapore (Singapore)
- RMIT Univ., Melbourne, VIC (Australia)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Publication Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1402632
- Report Number(s):
- LA-UR-17-23589
Journal ID: ISSN 2045-2322
- Grant/Contract Number:
- AC52-06NA25396
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Wang, X. B., Cheng, L., Wu, Y., Zhu, D. P., Wang, L., Zhu, Jian-Xin, Yang, Hyunsoo, and Chia, Elbert E. M. Topological-insulator-based terahertz modulator. United States: N. p., 2017.
Web. doi:10.1038/s41598-017-13701-9.
Wang, X. B., Cheng, L., Wu, Y., Zhu, D. P., Wang, L., Zhu, Jian-Xin, Yang, Hyunsoo, & Chia, Elbert E. M. Topological-insulator-based terahertz modulator. United States. https://doi.org/10.1038/s41598-017-13701-9
Wang, X. B., Cheng, L., Wu, Y., Zhu, D. P., Wang, L., Zhu, Jian-Xin, Yang, Hyunsoo, and Chia, Elbert E. M. Wed .
"Topological-insulator-based terahertz modulator". United States. https://doi.org/10.1038/s41598-017-13701-9. https://www.osti.gov/servlets/purl/1402632.
@article{osti_1402632,
title = {Topological-insulator-based terahertz modulator},
author = {Wang, X. B. and Cheng, L. and Wu, Y. and Zhu, D. P. and Wang, L. and Zhu, Jian-Xin and Yang, Hyunsoo and Chia, Elbert E. M.},
abstractNote = {Three dimensional topological insulators, as a new phase of quantum matters, are characterized by an insulating gap in the bulk and a metallic state on the surface. Particularly, most of the topological insulators have narrow band gaps, and hence have promising applications in the area of terahertz optoelectronics. In this work, we experimentally demonstrate an electronically-tunable terahertz intensity modulator based on Bi1:5Sb0:5Te1:8Se1:2 single crystal, one of the most insulating topological insulators. A relative frequency-independent modulation depth of ~62% over a wide frequency range from 0.3 to 1.4 THz has been achieved at room temperature, by applying a bias current of 100 mA. The modulation in the low current regime can be further enhanced at low temperature. We propose that the extraordinarily large modulation is a consequence of thermally-activated carrier absorption in the semiconducting bulk states. Our work provides a new application of topological insulators for terahertz technology.},
doi = {10.1038/s41598-017-13701-9},
journal = {Scientific Reports},
number = 1,
volume = 7,
place = {United States},
year = {Wed Oct 18 00:00:00 EDT 2017},
month = {Wed Oct 18 00:00:00 EDT 2017}
}
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