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Title: Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO 3 /SrTiO 3 Interface Structures

Authors:
 [1] ;  [2] ;  [2] ;  [3] ;  [4] ;  [5]
  1. Graduate Program in Applied Physics, Northwestern University, 2145 Sheridan Road Evanston IL 60208 USA
  2. NUSNNI-Nanocore, National University of Singapore, 117411 Singapore, Department of Physics, National University of Singapore, 117551 Singapore
  3. NUSNNI-Nanocore, National University of Singapore, 117411 Singapore, Department of Physics, National University of Singapore, 117551 Singapore, NUS Graduate School for Integrative Sciences & Engineering, National University of Singapore, 117456 Singapore
  4. NUSNNI-Nanocore, National University of Singapore, 117411 Singapore, Department of Physics, National University of Singapore, 117551 Singapore, NUS Graduate School for Integrative Sciences & Engineering, National University of Singapore, 117456 Singapore, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore, Department of Material Science and Engineering, National University of Singapore, 117575 Singapore
  5. Graduate Program in Applied Physics, Northwestern University, 2145 Sheridan Road Evanston IL 60208 USA, Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road Evaston IL 60208 USA
Publication Date:
Grant/Contract Number:
DEFG02-06ER46346
Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials Interfaces
Additional Journal Information:
Journal Name: Advanced Materials Interfaces Journal Volume: 4 Journal Issue: 3; Journal ID: ISSN 2196-7350
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
Germany
Language:
English
OSTI Identifier:
1401725

Davis, Samuel Kenneth, Huang, Zhen, Han, Kun, Ariando,, Venkatesan, Thirumalai, and Chandrasekhar, Venkat. Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO 3 /SrTiO 3 Interface Structures. Germany: N. p., Web. doi:10.1002/admi.201600830.
Davis, Samuel Kenneth, Huang, Zhen, Han, Kun, Ariando,, Venkatesan, Thirumalai, & Chandrasekhar, Venkat. Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO 3 /SrTiO 3 Interface Structures. Germany. doi:10.1002/admi.201600830.
Davis, Samuel Kenneth, Huang, Zhen, Han, Kun, Ariando,, Venkatesan, Thirumalai, and Chandrasekhar, Venkat. 2016. "Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO 3 /SrTiO 3 Interface Structures". Germany. doi:10.1002/admi.201600830.
@article{osti_1401725,
title = {Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO 3 /SrTiO 3 Interface Structures},
author = {Davis, Samuel Kenneth and Huang, Zhen and Han, Kun and Ariando, and Venkatesan, Thirumalai and Chandrasekhar, Venkat},
abstractNote = {},
doi = {10.1002/admi.201600830},
journal = {Advanced Materials Interfaces},
number = 3,
volume = 4,
place = {Germany},
year = {2016},
month = {12}
}

Works referenced in this record:

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journal, June 2007
  • Brinkman, A.; Huijben, M.; van Zalk, M.
  • Nature Materials, Vol. 6, Issue 7, p. 493-496
  • DOI: 10.1038/nmat1931

Tunable Quasi-Two-Dimensional Electron Gases in Oxide Heterostructures
journal, September 2006

Coexistence of Superconductivity and Ferromagnetism in Two Dimensions
journal, July 2011

Charge localization or itineracy at LaAlO3SrTiO3 interfaces Hole polarons, oxygen vacancies, and mobile electrons
journal, July 2006

Structure-Property Relation of SrTiO3/LaAlO3 Interfaces
journal, May 2009
  • Huijben, Mark; Brinkman, Alexander; Koster, Gertjan
  • Advanced Materials, Vol. 21, Issue 17, p. 1665-1677
  • DOI: 10.1002/adma.200801448