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Title: Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO 3 /SrTiO 3 Interface Structures

Authors:
 [1];  [2];  [2];  [3];  [4];  [5]
  1. Graduate Program in Applied Physics, Northwestern University, 2145 Sheridan Road Evanston IL 60208 USA
  2. NUSNNI-Nanocore, National University of Singapore, 117411 Singapore, Department of Physics, National University of Singapore, 117551 Singapore
  3. NUSNNI-Nanocore, National University of Singapore, 117411 Singapore, Department of Physics, National University of Singapore, 117551 Singapore, NUS Graduate School for Integrative Sciences & Engineering, National University of Singapore, 117456 Singapore
  4. NUSNNI-Nanocore, National University of Singapore, 117411 Singapore, Department of Physics, National University of Singapore, 117551 Singapore, NUS Graduate School for Integrative Sciences & Engineering, National University of Singapore, 117456 Singapore, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore, Department of Material Science and Engineering, National University of Singapore, 117575 Singapore
  5. Graduate Program in Applied Physics, Northwestern University, 2145 Sheridan Road Evanston IL 60208 USA, Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road Evaston IL 60208 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1401725
Grant/Contract Number:  
DEFG02-06ER46346
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials Interfaces
Additional Journal Information:
Journal Name: Advanced Materials Interfaces Journal Volume: 4 Journal Issue: 3; Journal ID: ISSN 2196-7350
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Davis, Samuel Kenneth, Huang, Zhen, Han, Kun, Ariando,, Venkatesan, Thirumalai, and Chandrasekhar, Venkat. Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO 3 /SrTiO 3 Interface Structures. Germany: N. p., 2016. Web. doi:10.1002/admi.201600830.
Davis, Samuel Kenneth, Huang, Zhen, Han, Kun, Ariando,, Venkatesan, Thirumalai, & Chandrasekhar, Venkat. Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO 3 /SrTiO 3 Interface Structures. Germany. doi:10.1002/admi.201600830.
Davis, Samuel Kenneth, Huang, Zhen, Han, Kun, Ariando,, Venkatesan, Thirumalai, and Chandrasekhar, Venkat. Fri . "Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO 3 /SrTiO 3 Interface Structures". Germany. doi:10.1002/admi.201600830.
@article{osti_1401725,
title = {Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO 3 /SrTiO 3 Interface Structures},
author = {Davis, Samuel Kenneth and Huang, Zhen and Han, Kun and Ariando, and Venkatesan, Thirumalai and Chandrasekhar, Venkat},
abstractNote = {},
doi = {10.1002/admi.201600830},
journal = {Advanced Materials Interfaces},
number = 3,
volume = 4,
place = {Germany},
year = {2016},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/admi.201600830

Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

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