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Title: Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films

Authors:
 [1];  [2];  [3];  [4];  [2];  [2];  [2];  [1];  [4];  [4];  [4];  [5];  [5];  [5];  [5];  [6];  [5];  [5];  [5]
  1. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084 China, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 China
  2. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084 China
  3. Department of Physics, Stanford University, Stanford CA 94305-4045 USA, State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433 China
  4. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 China
  5. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084 China, Collaborative Innovation Center of Quantum Matter, Beijing 100084 China
  6. Department of Physics, Stanford University, Stanford CA 94305-4045 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1401674
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Name: Advanced Materials Journal Volume: 28 Journal Issue: 30; Journal ID: ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Feng, Xiao, Feng, Yang, Wang, Jing, Ou, Yunbo, Hao, Zhenqi, Liu, Chang, Zhang, Zuocheng, Zhang, Liguo, Lin, Chaojing, Liao, Jian, Li, Yongqing, Wang, Li-Li, Ji, Shuai-Hua, Chen, Xi, Ma, Xucun, Zhang, Shou-Cheng, Wang, Yayu, He, Ke, and Xue, Qi-Kun. Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films. Germany: N. p., 2016. Web. doi:10.1002/adma.201600919.
Feng, Xiao, Feng, Yang, Wang, Jing, Ou, Yunbo, Hao, Zhenqi, Liu, Chang, Zhang, Zuocheng, Zhang, Liguo, Lin, Chaojing, Liao, Jian, Li, Yongqing, Wang, Li-Li, Ji, Shuai-Hua, Chen, Xi, Ma, Xucun, Zhang, Shou-Cheng, Wang, Yayu, He, Ke, & Xue, Qi-Kun. Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films. Germany. doi:10.1002/adma.201600919.
Feng, Xiao, Feng, Yang, Wang, Jing, Ou, Yunbo, Hao, Zhenqi, Liu, Chang, Zhang, Zuocheng, Zhang, Liguo, Lin, Chaojing, Liao, Jian, Li, Yongqing, Wang, Li-Li, Ji, Shuai-Hua, Chen, Xi, Ma, Xucun, Zhang, Shou-Cheng, Wang, Yayu, He, Ke, and Xue, Qi-Kun. Wed . "Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films". Germany. doi:10.1002/adma.201600919.
@article{osti_1401674,
title = {Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films},
author = {Feng, Xiao and Feng, Yang and Wang, Jing and Ou, Yunbo and Hao, Zhenqi and Liu, Chang and Zhang, Zuocheng and Zhang, Liguo and Lin, Chaojing and Liao, Jian and Li, Yongqing and Wang, Li-Li and Ji, Shuai-Hua and Chen, Xi and Ma, Xucun and Zhang, Shou-Cheng and Wang, Yayu and He, Ke and Xue, Qi-Kun},
abstractNote = {},
doi = {10.1002/adma.201600919},
journal = {Advanced Materials},
number = 30,
volume = 28,
place = {Germany},
year = {2016},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/adma.201600919

Citation Metrics:
Cited by: 19 works
Citation information provided by
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