InAlAs photovoltaic cell design for high device efficiency
Abstract
Abstract This study presents a new design for a single‐junction InAlAs solar cell, which reduces parasitic absorption losses from the low band‐gap contact layer while maintaining a functional window layer by integrating a selective etch stop. The etch stop is then removed prior to depositing an anti‐reflective coating. The final cell had a 17.9% efficiency under 1‐sun AM1.5 with an anti‐reflective coating. Minority carrier diffusion lengths were extracted from external quantum efficiency data using physics‐based device simulation software yielding 170 nm in the n‐type emitter and 4.6 μm in the p‐type base, which is more than four times the diffusion length previously reported for a p‐type InAlAs base. This report represents significant progress towards a high‐performance InAlAs top cell for a triple‐junction design lattice‐matched to InP. Copyright © 2017 John Wiley & Sons, Ltd.
- Authors:
-
- Rochester Institute of Technology, Rochester, NY (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 1374129
- Alternate Identifier(s):
- OSTI ID: 1401536
- Report Number(s):
- NREL/JA-5K00-69002
Journal ID: ISSN 1062-7995
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Progress in Photovoltaics
- Additional Journal Information:
- Journal Volume: 25; Journal Issue: 8; Journal ID: ISSN 1062-7995
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; InAlAs; InP; MOVPE; multijunction solar cell
Citation Formats
Smith, Brittany L., Bittner, Zachary S., Hellstroem, Staffan D., Nelson, George T., Slocum, Michael A., Norman, Andrew G., Forbes, David V., and Hubbard, Seth M. InAlAs photovoltaic cell design for high device efficiency. United States: N. p., 2017.
Web. doi:10.1002/pip.2895.
Smith, Brittany L., Bittner, Zachary S., Hellstroem, Staffan D., Nelson, George T., Slocum, Michael A., Norman, Andrew G., Forbes, David V., & Hubbard, Seth M. InAlAs photovoltaic cell design for high device efficiency. United States. https://doi.org/10.1002/pip.2895
Smith, Brittany L., Bittner, Zachary S., Hellstroem, Staffan D., Nelson, George T., Slocum, Michael A., Norman, Andrew G., Forbes, David V., and Hubbard, Seth M. Mon .
"InAlAs photovoltaic cell design for high device efficiency". United States. https://doi.org/10.1002/pip.2895. https://www.osti.gov/servlets/purl/1374129.
@article{osti_1374129,
title = {InAlAs photovoltaic cell design for high device efficiency},
author = {Smith, Brittany L. and Bittner, Zachary S. and Hellstroem, Staffan D. and Nelson, George T. and Slocum, Michael A. and Norman, Andrew G. and Forbes, David V. and Hubbard, Seth M.},
abstractNote = {Abstract This study presents a new design for a single‐junction InAlAs solar cell, which reduces parasitic absorption losses from the low band‐gap contact layer while maintaining a functional window layer by integrating a selective etch stop. The etch stop is then removed prior to depositing an anti‐reflective coating. The final cell had a 17.9% efficiency under 1‐sun AM1.5 with an anti‐reflective coating. Minority carrier diffusion lengths were extracted from external quantum efficiency data using physics‐based device simulation software yielding 170 nm in the n‐type emitter and 4.6 μm in the p‐type base, which is more than four times the diffusion length previously reported for a p‐type InAlAs base. This report represents significant progress towards a high‐performance InAlAs top cell for a triple‐junction design lattice‐matched to InP. Copyright © 2017 John Wiley & Sons, Ltd.},
doi = {10.1002/pip.2895},
journal = {Progress in Photovoltaics},
number = 8,
volume = 25,
place = {United States},
year = {Mon Apr 17 00:00:00 EDT 2017},
month = {Mon Apr 17 00:00:00 EDT 2017}
}
Web of Science
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Works referencing / citing this record:
Contactless electroreflectance study of the surface potential barrier in n -type and p -type InAlAs van Hoof structures lattice matched to InP
journal, May 2018
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Electron transport in the solar-relevant InAlAs
journal, May 2019
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