Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces
Abstract
The interaction of radiation with materials controls the performance, reliability, and safety of many structures in nuclear power systems. Revolutionary improvements in radiation damage resistance may be attainable if methods can be found to manipulate interface properties to give optimal interface stability and point defect recombination capability. To understand how variations in interface properties such as misfit dislocation density and local chemistry affect radiation‐induced defect absorption and recombination, a model system of metallic Cr x V 1− x (0 ≤ x ≤ 1) epitaxial films deposited on MgO(001) single crystal substrates has been explored. By controlling film composition, the lattice mismatch between the film and MgO is adjusted to vary the misfit dislocation density at the metal/oxide interface. The stability of these interfaces under various irradiation conditions is studied experimentally and theoretically. The results indicate that, unlike at metal/metal interfaces, the misfit dislocation density does not dominate radiation damage tolerance at metal/oxide interfaces. Rather, the stoichiometry and the location of the misfit dislocation extra half‐plane (in the metal or the oxide) drive radiation‐induced defect behavior. Together, these results demonstrate the sensitivity of defect recombination to interfacial chemistry and provide new avenues for engineering radiation‐tolerant nanomaterials for next‐generation nuclear power plants.
- Authors:
-
[1];
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab.
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate
- Univ. of Tennessee, Knoxville, TN (United States). Dept. of Nuclear Engineering
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Energy and Environment Directorate
- Publication Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Materials at Irradiation and Mechanical Extremes (CMIME)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Biological and Environmental Research (BER); USDOE National Nuclear Security Administration (NNSA)
- Contributing Org.:
- Univ. of Tennessee, Knoxville, TN (United States)
- OSTI Identifier:
- 1369199
- Alternate Identifier(s):
- OSTI ID: 1401301
- Report Number(s):
- LA-UR-17-21394
Journal ID: ISSN 2196-7350
- Grant/Contract Number:
- AC52-06NA25396; AC05-76RL01830
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials Interfaces
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 14; Journal ID: ISSN 2196-7350
- Publisher:
- Wiley-VCH
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 73 NUCLEAR PHYSICS AND RADIATION PHYSICS; density functional theory; interfaces; misfit dislocations; radiation damage; RBS/channeling
Citation Formats
Shutthanandan, Vaithiyalingam, Choudhury, Samrat, Manandhar, Sandeep, Kaspar, Tiffany C., Wang, Chongmin, Devaraj, Arun, Wirth, Brian D., Thevuthasan, Suntharampilli, Hoagland, Richard G., Dholabhai, Pratik P., Uberuaga, Blas P., and Kurtz, Richard J. Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces. United States: N. p., 2017.
Web. doi:10.1002/admi.201700037.
Shutthanandan, Vaithiyalingam, Choudhury, Samrat, Manandhar, Sandeep, Kaspar, Tiffany C., Wang, Chongmin, Devaraj, Arun, Wirth, Brian D., Thevuthasan, Suntharampilli, Hoagland, Richard G., Dholabhai, Pratik P., Uberuaga, Blas P., & Kurtz, Richard J. Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces. United States. https://doi.org/10.1002/admi.201700037
Shutthanandan, Vaithiyalingam, Choudhury, Samrat, Manandhar, Sandeep, Kaspar, Tiffany C., Wang, Chongmin, Devaraj, Arun, Wirth, Brian D., Thevuthasan, Suntharampilli, Hoagland, Richard G., Dholabhai, Pratik P., Uberuaga, Blas P., and Kurtz, Richard J. Mon .
"Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces". United States. https://doi.org/10.1002/admi.201700037. https://www.osti.gov/servlets/purl/1369199.
@article{osti_1369199,
title = {Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces},
author = {Shutthanandan, Vaithiyalingam and Choudhury, Samrat and Manandhar, Sandeep and Kaspar, Tiffany C. and Wang, Chongmin and Devaraj, Arun and Wirth, Brian D. and Thevuthasan, Suntharampilli and Hoagland, Richard G. and Dholabhai, Pratik P. and Uberuaga, Blas P. and Kurtz, Richard J.},
abstractNote = {The interaction of radiation with materials controls the performance, reliability, and safety of many structures in nuclear power systems. Revolutionary improvements in radiation damage resistance may be attainable if methods can be found to manipulate interface properties to give optimal interface stability and point defect recombination capability. To understand how variations in interface properties such as misfit dislocation density and local chemistry affect radiation‐induced defect absorption and recombination, a model system of metallic Cr x V 1− x (0 ≤ x ≤ 1) epitaxial films deposited on MgO(001) single crystal substrates has been explored. By controlling film composition, the lattice mismatch between the film and MgO is adjusted to vary the misfit dislocation density at the metal/oxide interface. The stability of these interfaces under various irradiation conditions is studied experimentally and theoretically. The results indicate that, unlike at metal/metal interfaces, the misfit dislocation density does not dominate radiation damage tolerance at metal/oxide interfaces. Rather, the stoichiometry and the location of the misfit dislocation extra half‐plane (in the metal or the oxide) drive radiation‐induced defect behavior. Together, these results demonstrate the sensitivity of defect recombination to interfacial chemistry and provide new avenues for engineering radiation‐tolerant nanomaterials for next‐generation nuclear power plants.},
doi = {10.1002/admi.201700037},
journal = {Advanced Materials Interfaces},
number = 14,
volume = 4,
place = {United States},
year = {Mon Apr 24 00:00:00 EDT 2017},
month = {Mon Apr 24 00:00:00 EDT 2017}
}
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Works referencing / citing this record:
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