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Title: Tunable Oxygen Diffusion and Electronic Conduction in SrTiO 3 by Dislocation-Induced Space Charge Fields

Authors:
ORCiD logo [1] ;  [2] ;  [3] ;  [2] ;  [1]
  1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 USA, Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 USA
  2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 USA
  3. Max Planck Institute for Solid State Research, Heisenbergstrasse 1 Stuttgart 70569 Germany
Publication Date:
Grant/Contract Number:
SC0002633; AC05-00OR22725
Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Name: Advanced Functional Materials Journal Volume: 27 Journal Issue: 22; Journal ID: ISSN 1616-301X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
Germany
Language:
English
OSTI Identifier:
1401061

Adepalli, Kiran K., Yang, Jing, Maier, Joachim, Tuller, Harry L., and Yildiz, Bilge. Tunable Oxygen Diffusion and Electronic Conduction in SrTiO 3 by Dislocation-Induced Space Charge Fields. Germany: N. p., Web. doi:10.1002/adfm.201700243.
Adepalli, Kiran K., Yang, Jing, Maier, Joachim, Tuller, Harry L., & Yildiz, Bilge. Tunable Oxygen Diffusion and Electronic Conduction in SrTiO 3 by Dislocation-Induced Space Charge Fields. Germany. doi:10.1002/adfm.201700243.
Adepalli, Kiran K., Yang, Jing, Maier, Joachim, Tuller, Harry L., and Yildiz, Bilge. 2017. "Tunable Oxygen Diffusion and Electronic Conduction in SrTiO 3 by Dislocation-Induced Space Charge Fields". Germany. doi:10.1002/adfm.201700243.
@article{osti_1401061,
title = {Tunable Oxygen Diffusion and Electronic Conduction in SrTiO 3 by Dislocation-Induced Space Charge Fields},
author = {Adepalli, Kiran K. and Yang, Jing and Maier, Joachim and Tuller, Harry L. and Yildiz, Bilge},
abstractNote = {},
doi = {10.1002/adfm.201700243},
journal = {Advanced Functional Materials},
number = 22,
volume = 27,
place = {Germany},
year = {2017},
month = {4}
}

Works referenced in this record:

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices
journal, August 2010
  • Muenstermann, Ruth; Menke, Tobias; Dittmann, Regina
  • Advanced Materials, Vol. 22, Issue 43, p. 4819-4822
  • DOI: 10.1002/adma.201001872