skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon: Dislocation generation during seed-assisted directional solidification of Si

Authors:
 [1];  [2];  [1];  [1]
  1. Department of Materials Science and Engineering, NTNU, Alfred Getz vei 2B 7491 Trondheim Norway
  2. Qatar Environment and Energy Research Institute, P.O. Box 5825 Doha Qatar, Massachusetts Institute of Technology, Cambridge MA 02139 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1400934
Grant/Contract Number:  
EE0005314
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi. A, Applications and Materials Science
Additional Journal Information:
Journal Name: Physica Status Solidi. A, Applications and Materials Science Journal Volume: 213 Journal Issue: 1; Journal ID: ISSN 1862-6300
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Autruffe, Antoine, Kivambe, Maulid, Arnberg, Lars, and Di Sabatino, Marisa. The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon: Dislocation generation during seed-assisted directional solidification of Si. Germany: N. p., 2015. Web. doi:10.1002/pssa.201532651.
Autruffe, Antoine, Kivambe, Maulid, Arnberg, Lars, & Di Sabatino, Marisa. The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon: Dislocation generation during seed-assisted directional solidification of Si. Germany. doi:10.1002/pssa.201532651.
Autruffe, Antoine, Kivambe, Maulid, Arnberg, Lars, and Di Sabatino, Marisa. Thu . "The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon: Dislocation generation during seed-assisted directional solidification of Si". Germany. doi:10.1002/pssa.201532651.
@article{osti_1400934,
title = {The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon: Dislocation generation during seed-assisted directional solidification of Si},
author = {Autruffe, Antoine and Kivambe, Maulid and Arnberg, Lars and Di Sabatino, Marisa},
abstractNote = {},
doi = {10.1002/pssa.201532651},
journal = {Physica Status Solidi. A, Applications and Materials Science},
number = 1,
volume = 213,
place = {Germany},
year = {2015},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/pssa.201532651

Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Oxygen segregation in Czochralski silicon growth
journal, February 1983

  • Lin, Wen; Hill, D. W.
  • Journal of Applied Physics, Vol. 54, Issue 2
  • DOI: 10.1063/1.332115

Distribution and propagation of dislocation defects in quasi-single crystalline silicon ingots cast by the directional solidification method
journal, January 2015


Dislocation Etch for (100) Planes in Silicon
journal, January 1972

  • Secco d' Aragona, F.
  • Journal of The Electrochemical Society, Vol. 119, Issue 7
  • DOI: 10.1149/1.2404374

Impact of growth rate on impurities segregation at grain boundaries in silicon during Bridgman growth
journal, June 2013


Dislocation Models of Crystal Grain Boundaries
journal, May 1950


Dislocation sources in silicon
journal, March 1973


Carrier Recombination Activity and Structural Properties of Small-Angle Grain Boundaries in Multicrystalline Silicon
journal, October 2007

  • Chen, Jun; Sekiguchi, Takashi
  • Japanese Journal of Applied Physics, Vol. 46, Issue 10A
  • DOI: 10.1143/JJAP.46.6489

Characterization of structural defects in annealed silicon containing oxygen
journal, September 1976

  • Maher, D. M.; Staudinger, A.; Patel, J. R.
  • Journal of Applied Physics, Vol. 47, Issue 9
  • DOI: 10.1063/1.323241

Optimizing seeded casting of mono-like silicon crystals through numerical simulation
journal, August 2012


The Diffusivity and Solubility of Oxygen in Silicon
journal, January 1985


Defect formation induced by seed-joints during directional solidification of quasi-mono-crystalline silicon ingots
journal, November 2014


Oxygen precipitation and the generation of dislocations in silicon
journal, October 1976

  • Tan, T. Y.; Tice, W. K.
  • The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics, Vol. 34, Issue 4
  • DOI: 10.1080/14786437608223798

Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed
journal, March 2010


Oxidation‐induced stacking faults in silicon. I. Nucleation phenomenon
journal, January 1974

  • Ravi, K. V.; Varker, C. J.
  • Journal of Applied Physics, Vol. 45, Issue 1
  • DOI: 10.1063/1.1662971

Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor Silicon
journal, January 1973

  • Yatsurugi, Y.; Akiyama, N.; Endo, Y.
  • Journal of The Electrochemical Society, Vol. 120, Issue 7
  • DOI: 10.1149/1.2403610

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon
journal, January 1999


Nucleation in small scale multicrystalline silicon ingots
journal, December 2012


Oxygen precipitation and stacking‐fault formation in dislocation‐free silicon
journal, December 1977

  • Patel, J. R.; Jackson, K. A.; Reiss, H.
  • Journal of Applied Physics, Vol. 48, Issue 12
  • DOI: 10.1063/1.323558

Solar cell efficiency tables (Version 45): Solar cell efficiency tables
journal, December 2014

  • Green, Martin A.; Emery, Keith; Hishikawa, Yoshihiro
  • Progress in Photovoltaics: Research and Applications, Vol. 23, Issue 1
  • DOI: 10.1002/pip.2573

Lattice defects within grain volumes that affect the electrical quality of cast polycrystalline silicon solar‐cell materials
journal, March 1985

  • Yoo, K. C.; Johnson, S. M.; Regnault, W. F.
  • Journal of Applied Physics, Vol. 57, Issue 6
  • DOI: 10.1063/1.334372

Dislocation generation at near-coincidence site lattice grain boundaries during silicon directional solidification
journal, February 2015


TEM Characterization of near Sub-Grain Boundary Dislocations in Directionally Solidified Multicrystalline Silicon
journal, August 2011


Calculated Solubilities of Oxygen in Liquid and Solid Silicon
journal, January 1986

  • Carlberg, Torbjo^rn
  • Journal of The Electrochemical Society, Vol. 133, Issue 9
  • DOI: 10.1149/1.2109053

Structure and dislocation development in mono-like silicon: Structure and dislocation development in mono-like silicon
journal, July 2015

  • Ekstrøm, K. E.; Stokkan, G.; Søndenå, R.
  • physica status solidi (a), Vol. 212, Issue 10
  • DOI: 10.1002/pssa.201532105

Growth of dislocation clusters during directional solidification of multicrystalline silicon ingots
journal, December 2011


Advanced process for n-type mono-like silicon a-Si:H/c-Si heterojunction solar cells with 21.5% efficiency
journal, November 2014


The microstructure of dislocation clusters in industrial directionally solidified multicrystalline silicon
journal, September 2011

  • Kivambe, Maulid M.; Stokkan, Gaute; Ervik, Torunn
  • Journal of Applied Physics, Vol. 110, Issue 6
  • DOI: 10.1063/1.3641978

Dislocation formation in seeds for quasi-monocrystalline silicon for solar cells
journal, April 2014


Oxygen distribution on a multicrystalline silicon ingot grown from upgraded metallurgical silicon
journal, February 2011