High-Performance Near-IR Photodetector Using Low-Bandgap MA0.5FA0.5Pb0.5Sn0.5I3 Perovskite
Abstract
Photodetectors with ultrafast response are explored using inorganic/organic hybrid perovskites. High responsivity and fast optoelectronic response are achieved due to the exceptional semiconducting properties of perovskite materials. However, most of the perovskite-based photodetectors exploited to date are centered on Pb-based perovskites, which only afford spectral response across the visible spectrum. This study demonstrates a high-performance near-IR (NIR) photodetector using a stable low-bandgap Sn-containing perovskite, (CH3NH3)0.5(NH2CHNH2)0.5Pb0.5Sn0.5I3 (MA0.5FA0.5Pb0.5Sn0.5I3), which is processed with an antioxidant additive, ascorbic acid (AA). The addition of AA effectively strengthens the stability of Sn-containing perovskite against oxygen, thereby significantly inhibiting the leakage current. Consequently, the derived photodetector shows high responsivity with a detectivity of over 1012 Jones ranging from 800 to 970 nm. Such low-cost, solution processable NIR photodetectors with high performance show promising potential for future optoelectronic applications.
- Authors:
-
- Univ. of Washington, Seattle, WA (United States)
- Department of Chemical Engineering, National Taiwan University
- Univ. of Washington, Seattle, WA (United States) ; Hong Kong Univ. (Hong Kong)
- Publication Date:
- Research Org.:
- Univ. of Washington, Seattle, WA (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1533020
- Alternate Identifier(s):
- OSTI ID: 1400855
- Grant/Contract Number:
- EE0006710
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Functional Materials
- Additional Journal Information:
- Journal Volume: 27; Journal Issue: 28; Journal ID: ISSN 1616-301X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; chemistry; science & technology; materials science; Physics; low bandgap; near‐IR; perovskites; photodetectors
Citation Formats
Xu, Xiaobao, Chueh, Chu-Chen, Jing, Peifeng, Yang, Zhibin, Shi, Xueliang, Zhao, Ting, Lin, Lih Y., and Jen, Alex K. -Y. High-Performance Near-IR Photodetector Using Low-Bandgap MA0.5FA0.5Pb0.5Sn0.5I3 Perovskite. United States: N. p., 2017.
Web. doi:10.1002/adfm.201701053.
Xu, Xiaobao, Chueh, Chu-Chen, Jing, Peifeng, Yang, Zhibin, Shi, Xueliang, Zhao, Ting, Lin, Lih Y., & Jen, Alex K. -Y. High-Performance Near-IR Photodetector Using Low-Bandgap MA0.5FA0.5Pb0.5Sn0.5I3 Perovskite. United States. https://doi.org/10.1002/adfm.201701053
Xu, Xiaobao, Chueh, Chu-Chen, Jing, Peifeng, Yang, Zhibin, Shi, Xueliang, Zhao, Ting, Lin, Lih Y., and Jen, Alex K. -Y. Tue .
"High-Performance Near-IR Photodetector Using Low-Bandgap MA0.5FA0.5Pb0.5Sn0.5I3 Perovskite". United States. https://doi.org/10.1002/adfm.201701053. https://www.osti.gov/servlets/purl/1533020.
@article{osti_1533020,
title = {High-Performance Near-IR Photodetector Using Low-Bandgap MA0.5FA0.5Pb0.5Sn0.5I3 Perovskite},
author = {Xu, Xiaobao and Chueh, Chu-Chen and Jing, Peifeng and Yang, Zhibin and Shi, Xueliang and Zhao, Ting and Lin, Lih Y. and Jen, Alex K. -Y.},
abstractNote = {Photodetectors with ultrafast response are explored using inorganic/organic hybrid perovskites. High responsivity and fast optoelectronic response are achieved due to the exceptional semiconducting properties of perovskite materials. However, most of the perovskite-based photodetectors exploited to date are centered on Pb-based perovskites, which only afford spectral response across the visible spectrum. This study demonstrates a high-performance near-IR (NIR) photodetector using a stable low-bandgap Sn-containing perovskite, (CH3NH3)0.5(NH2CHNH2)0.5Pb0.5Sn0.5I3 (MA0.5FA0.5Pb0.5Sn0.5I3), which is processed with an antioxidant additive, ascorbic acid (AA). The addition of AA effectively strengthens the stability of Sn-containing perovskite against oxygen, thereby significantly inhibiting the leakage current. Consequently, the derived photodetector shows high responsivity with a detectivity of over 1012 Jones ranging from 800 to 970 nm. Such low-cost, solution processable NIR photodetectors with high performance show promising potential for future optoelectronic applications.},
doi = {10.1002/adfm.201701053},
journal = {Advanced Functional Materials},
number = 28,
volume = 27,
place = {United States},
year = {Tue May 16 00:00:00 EDT 2017},
month = {Tue May 16 00:00:00 EDT 2017}
}
Web of Science
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