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Title: High-Performance Near-IR Photodetector Using Low-Bandgap MA0.5FA0.5Pb0.5Sn0.5I3 Perovskite

Abstract

Photodetectors with ultrafast response are explored using inorganic/organic hybrid perovskites. High responsivity and fast optoelectronic response are achieved due to the exceptional semiconducting properties of perovskite materials. However, most of the perovskite-based photodetectors exploited to date are centered on Pb-based perovskites, which only afford spectral response across the visible spectrum. This study demonstrates a high-performance near-IR (NIR) photodetector using a stable low-bandgap Sn-containing perovskite, (CH3NH3)0.5(NH2CHNH2)0.5Pb0.5Sn0.5I3 (MA0.5FA0.5Pb0.5Sn0.5I3), which is processed with an antioxidant additive, ascorbic acid (AA). The addition of AA effectively strengthens the stability of Sn-containing perovskite against oxygen, thereby significantly inhibiting the leakage current. Consequently, the derived photodetector shows high responsivity with a detectivity of over 1012 Jones ranging from 800 to 970 nm. Such low-cost, solution processable NIR photodetectors with high performance show promising potential for future optoelectronic applications.

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [1];  [3]
  1. Univ. of Washington, Seattle, WA (United States)
  2. Department of Chemical Engineering, National Taiwan University
  3. Univ. of Washington, Seattle, WA (United States) ; Hong Kong Univ. (Hong Kong)
Publication Date:
Research Org.:
Univ. of Washington, Seattle, WA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1533020
Alternate Identifier(s):
OSTI ID: 1400855
Grant/Contract Number:  
EE0006710
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 27; Journal Issue: 28; Journal ID: ISSN 1616-301X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; chemistry; science & technology; materials science; Physics; low bandgap; near‐IR; perovskites; photodetectors

Citation Formats

Xu, Xiaobao, Chueh, Chu-Chen, Jing, Peifeng, Yang, Zhibin, Shi, Xueliang, Zhao, Ting, Lin, Lih Y., and Jen, Alex K. -Y. High-Performance Near-IR Photodetector Using Low-Bandgap MA0.5FA0.5Pb0.5Sn0.5I3 Perovskite. United States: N. p., 2017. Web. doi:10.1002/adfm.201701053.
Xu, Xiaobao, Chueh, Chu-Chen, Jing, Peifeng, Yang, Zhibin, Shi, Xueliang, Zhao, Ting, Lin, Lih Y., & Jen, Alex K. -Y. High-Performance Near-IR Photodetector Using Low-Bandgap MA0.5FA0.5Pb0.5Sn0.5I3 Perovskite. United States. https://doi.org/10.1002/adfm.201701053
Xu, Xiaobao, Chueh, Chu-Chen, Jing, Peifeng, Yang, Zhibin, Shi, Xueliang, Zhao, Ting, Lin, Lih Y., and Jen, Alex K. -Y. Tue . "High-Performance Near-IR Photodetector Using Low-Bandgap MA0.5FA0.5Pb0.5Sn0.5I3 Perovskite". United States. https://doi.org/10.1002/adfm.201701053. https://www.osti.gov/servlets/purl/1533020.
@article{osti_1533020,
title = {High-Performance Near-IR Photodetector Using Low-Bandgap MA0.5FA0.5Pb0.5Sn0.5I3 Perovskite},
author = {Xu, Xiaobao and Chueh, Chu-Chen and Jing, Peifeng and Yang, Zhibin and Shi, Xueliang and Zhao, Ting and Lin, Lih Y. and Jen, Alex K. -Y.},
abstractNote = {Photodetectors with ultrafast response are explored using inorganic/organic hybrid perovskites. High responsivity and fast optoelectronic response are achieved due to the exceptional semiconducting properties of perovskite materials. However, most of the perovskite-based photodetectors exploited to date are centered on Pb-based perovskites, which only afford spectral response across the visible spectrum. This study demonstrates a high-performance near-IR (NIR) photodetector using a stable low-bandgap Sn-containing perovskite, (CH3NH3)0.5(NH2CHNH2)0.5Pb0.5Sn0.5I3 (MA0.5FA0.5Pb0.5Sn0.5I3), which is processed with an antioxidant additive, ascorbic acid (AA). The addition of AA effectively strengthens the stability of Sn-containing perovskite against oxygen, thereby significantly inhibiting the leakage current. Consequently, the derived photodetector shows high responsivity with a detectivity of over 1012 Jones ranging from 800 to 970 nm. Such low-cost, solution processable NIR photodetectors with high performance show promising potential for future optoelectronic applications.},
doi = {10.1002/adfm.201701053},
journal = {Advanced Functional Materials},
number = 28,
volume = 27,
place = {United States},
year = {Tue May 16 00:00:00 EDT 2017},
month = {Tue May 16 00:00:00 EDT 2017}
}

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