skip to main content

DOE PAGESDOE PAGES

Title: Ion-beam induced effects in multi-layered semiconductor systems: Ion-beam induced effects in multi-layered semiconductor systems

Authors:
 [1] ;  [2] ;  [3] ;  [4]
  1. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1 07743 Jena Germany
  2. Departamento de Física, i3N, Universidade de Aveiro, 3810-193 Aveiro Portugal
  3. Departamento de Física Aplicada y Centro de Microanálisis of Materiales, Universidad Autónoma de Madrid, 28049 Madrid Spain
  4. IPFN, Instituto Superior Técnico, Universidade de Lisboa, Estrada National, 2695-066 Bobadela LRS Portugal
Publication Date:
Grant/Contract Number:
UID/CTM/50025/2013; JCI-2012-14509
Type:
Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi B. Basic Solid State Physics
Additional Journal Information:
Journal Name: Physica Status Solidi B. Basic Solid State Physics Journal Volume: 253 Journal Issue: 11; Journal ID: ISSN 0370-1972
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE Office of Nuclear Energy (NE), Fuel Cycle Technologies (NE-5)
Country of Publication:
Germany
Language:
English
OSTI Identifier:
1400771

Wendler, Elke, Sobolev, Nikolai A., Redondo-Cubero, Andrés, and Lorenz, Katharina. Ion-beam induced effects in multi-layered semiconductor systems: Ion-beam induced effects in multi-layered semiconductor systems. Germany: N. p., Web. doi:10.1002/pssb.201600405.
Wendler, Elke, Sobolev, Nikolai A., Redondo-Cubero, Andrés, & Lorenz, Katharina. Ion-beam induced effects in multi-layered semiconductor systems: Ion-beam induced effects in multi-layered semiconductor systems. Germany. doi:10.1002/pssb.201600405.
Wendler, Elke, Sobolev, Nikolai A., Redondo-Cubero, Andrés, and Lorenz, Katharina. 2016. "Ion-beam induced effects in multi-layered semiconductor systems: Ion-beam induced effects in multi-layered semiconductor systems". Germany. doi:10.1002/pssb.201600405.
@article{osti_1400771,
title = {Ion-beam induced effects in multi-layered semiconductor systems: Ion-beam induced effects in multi-layered semiconductor systems},
author = {Wendler, Elke and Sobolev, Nikolai A. and Redondo-Cubero, Andrés and Lorenz, Katharina},
abstractNote = {},
doi = {10.1002/pssb.201600405},
journal = {Physica Status Solidi B. Basic Solid State Physics},
number = 11,
volume = 253,
place = {Germany},
year = {2016},
month = {7}
}