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Title: Parameterized complex dielectric functions of CuIn 1−x Ga x Se 2 : applications in optical characterization of compositional non‐uniformities and depth profiles in materials and solar cells

Abstract

Abstract In‐situ spectroscopic ellipsometry (SE) was employed to extract the complex dielectric functions ε = ε 1  + iε 2 over the spectral range of 0.75–6.5 eV for a set of polycrystalline CuIn 1− x Ga x Se 2 (CIGS) thin films with different alloy compositions x  = [Ga]/{[In] + [Ga]}. For highest possible accuracy in ε for each CIGS thin film, specialized SE procedures were adopted including (i) deposition to a thickness of ~600 Å on smooth native oxide covered crystal silicon wafers, which minimizes the surface roughness on the film and thus the required corrections in data analysis, and (ii) measurement in‐situ , which minimizes ambient contamination and oxidation of the film surface. Assuming an analytical form for each of the ε spectra for these CIGS films, oscillator parameters were obtained in best fits, and these parameters were fit in turn to polynomials in x . With the resulting database of polynomial coefficients, the ε spectra for any composition of CIGS can be generated from the single parameter, x . In addition to enabling accurate contactless determination of bulk and surface roughness layer thicknesses of CIGS films by high speed multichannel SE, the database enables characterization of the composition and its profile with depthmore » into these films, and even how the depth profile varies spatially within the plane of the films. In this study, depth profile parameters were found to correlate spatially with solar cell performance parameters. As a result, SE provides the capability of contactless compositional analysis of production‐scale CIGS photovoltaic modules at high speed. Copyright © 2016 John Wiley & Sons, Ltd.« less

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [1];  [1]
  1. Center for Photovoltaics Innovation and Commercialization and Department of Physics and Astronomy University of Toledo Toledo OH 43606 USA
  2. Virginia Institute of Photovoltaics and Department of Electrical and Computer Engineering Old Dominion University Norfolk VA 23695 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1400752
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Progress in Photovoltaics
Additional Journal Information:
Journal Name: Progress in Photovoltaics Journal Volume: 24 Journal Issue: 9; Journal ID: ISSN 1062-7995
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Aryal, Puruswottam, Ibdah, Abdel‐Rahman, Pradhan, Puja, Attygalle, Dinesh, Koirala, Prakash, Podraza, Nikolas J., Marsillac, Sylvain, Collins, Robert W., and Li, Jian. Parameterized complex dielectric functions of CuIn 1−x Ga x Se 2 : applications in optical characterization of compositional non‐uniformities and depth profiles in materials and solar cells. United Kingdom: N. p., 2016. Web. doi:10.1002/pip.2774.
Aryal, Puruswottam, Ibdah, Abdel‐Rahman, Pradhan, Puja, Attygalle, Dinesh, Koirala, Prakash, Podraza, Nikolas J., Marsillac, Sylvain, Collins, Robert W., & Li, Jian. Parameterized complex dielectric functions of CuIn 1−x Ga x Se 2 : applications in optical characterization of compositional non‐uniformities and depth profiles in materials and solar cells. United Kingdom. https://doi.org/10.1002/pip.2774
Aryal, Puruswottam, Ibdah, Abdel‐Rahman, Pradhan, Puja, Attygalle, Dinesh, Koirala, Prakash, Podraza, Nikolas J., Marsillac, Sylvain, Collins, Robert W., and Li, Jian. Sat . "Parameterized complex dielectric functions of CuIn 1−x Ga x Se 2 : applications in optical characterization of compositional non‐uniformities and depth profiles in materials and solar cells". United Kingdom. https://doi.org/10.1002/pip.2774.
@article{osti_1400752,
title = {Parameterized complex dielectric functions of CuIn 1−x Ga x Se 2 : applications in optical characterization of compositional non‐uniformities and depth profiles in materials and solar cells},
author = {Aryal, Puruswottam and Ibdah, Abdel‐Rahman and Pradhan, Puja and Attygalle, Dinesh and Koirala, Prakash and Podraza, Nikolas J. and Marsillac, Sylvain and Collins, Robert W. and Li, Jian},
abstractNote = {Abstract In‐situ spectroscopic ellipsometry (SE) was employed to extract the complex dielectric functions ε = ε 1  + iε 2 over the spectral range of 0.75–6.5 eV for a set of polycrystalline CuIn 1− x Ga x Se 2 (CIGS) thin films with different alloy compositions x  = [Ga]/{[In] + [Ga]}. For highest possible accuracy in ε for each CIGS thin film, specialized SE procedures were adopted including (i) deposition to a thickness of ~600 Å on smooth native oxide covered crystal silicon wafers, which minimizes the surface roughness on the film and thus the required corrections in data analysis, and (ii) measurement in‐situ , which minimizes ambient contamination and oxidation of the film surface. Assuming an analytical form for each of the ε spectra for these CIGS films, oscillator parameters were obtained in best fits, and these parameters were fit in turn to polynomials in x . With the resulting database of polynomial coefficients, the ε spectra for any composition of CIGS can be generated from the single parameter, x . In addition to enabling accurate contactless determination of bulk and surface roughness layer thicknesses of CIGS films by high speed multichannel SE, the database enables characterization of the composition and its profile with depth into these films, and even how the depth profile varies spatially within the plane of the films. In this study, depth profile parameters were found to correlate spatially with solar cell performance parameters. As a result, SE provides the capability of contactless compositional analysis of production‐scale CIGS photovoltaic modules at high speed. Copyright © 2016 John Wiley & Sons, Ltd.},
doi = {10.1002/pip.2774},
journal = {Progress in Photovoltaics},
number = 9,
volume = 24,
place = {United Kingdom},
year = {Sat Apr 23 00:00:00 EDT 2016},
month = {Sat Apr 23 00:00:00 EDT 2016}
}

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Free Publicly Available Full Text
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https://doi.org/10.1002/pip.2774

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