Defect Engineering in Multinary Earth‐Abundant Chalcogenide Photovoltaic Materials
Abstract
Application of zinc‐blende‐related chalcogenide absorbers such as CdTe and Cu(In,Ga)Se 2 (CIGSe) has enabled remarkable advancement in laboratory‐ and commercial‐scale thin‐film photovoltaic performance; however concerns remain regarding the toxicity (CdTe) and scarcity (CIGSe/CdTe) of the constituent elements. Recently, kesterite‐based Cu 2 ZnSn(S,Se) 4 (CZTSSe) materials have emerged as attractive non‐toxic and earth‐abundant absorber candidates. Despite the similarities between CZTSSe and CIGSe/CdTe, the record power conversion efficiency of CZTSSe solar cells (12.6%) remains significantly lower than that of CIGSe (22.6%) and CdTe (22.1%) devices, with the performance gap primarily being attributed to cationic disordering and associated band tailing. To capture the promise of kesterite‐like materials as prospective “drop‐in” earth‐abundant replacements for closely‐related CIGSe, current research has focused on several key directions to control disorder, including: (i) examination of the interaction between processing conditions and atomic site disorder, (ii) isoelectronic cation substitution to introduce ionic size mismatch, and (iii) structural diversification beyond the zinc‐blende‐type coordination environment. In this review, recent efforts targeting accurate identification and engineering of anti‐site disorder in kesterite‐based CZTSSe are considered. Lessons learned from CZTSSe are applied to other complex chalcogenide semiconductors, in an effort to develop promising pathways to avoid anti‐site disordering and associated band tailing in futuremore »
- Authors:
-
- Department of Mechanical Engineering and Materials Science Duke University Durham NC 27708 USA, Department of Chemistry Duke University Durham NC 27708 USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1400611
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Advanced Energy Materials
- Additional Journal Information:
- Journal Name: Advanced Energy Materials Journal Volume: 7 Journal Issue: 11; Journal ID: ISSN 1614-6832
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- Germany
- Language:
- English
Citation Formats
Shin, Donghyeop, Saparov, Bayrammurad, and Mitzi, David B. Defect Engineering in Multinary Earth‐Abundant Chalcogenide Photovoltaic Materials. Germany: N. p., 2017.
Web. doi:10.1002/aenm.201602366.
Shin, Donghyeop, Saparov, Bayrammurad, & Mitzi, David B. Defect Engineering in Multinary Earth‐Abundant Chalcogenide Photovoltaic Materials. Germany. https://doi.org/10.1002/aenm.201602366
Shin, Donghyeop, Saparov, Bayrammurad, and Mitzi, David B. Fri .
"Defect Engineering in Multinary Earth‐Abundant Chalcogenide Photovoltaic Materials". Germany. https://doi.org/10.1002/aenm.201602366.
@article{osti_1400611,
title = {Defect Engineering in Multinary Earth‐Abundant Chalcogenide Photovoltaic Materials},
author = {Shin, Donghyeop and Saparov, Bayrammurad and Mitzi, David B.},
abstractNote = {Application of zinc‐blende‐related chalcogenide absorbers such as CdTe and Cu(In,Ga)Se 2 (CIGSe) has enabled remarkable advancement in laboratory‐ and commercial‐scale thin‐film photovoltaic performance; however concerns remain regarding the toxicity (CdTe) and scarcity (CIGSe/CdTe) of the constituent elements. Recently, kesterite‐based Cu 2 ZnSn(S,Se) 4 (CZTSSe) materials have emerged as attractive non‐toxic and earth‐abundant absorber candidates. Despite the similarities between CZTSSe and CIGSe/CdTe, the record power conversion efficiency of CZTSSe solar cells (12.6%) remains significantly lower than that of CIGSe (22.6%) and CdTe (22.1%) devices, with the performance gap primarily being attributed to cationic disordering and associated band tailing. To capture the promise of kesterite‐like materials as prospective “drop‐in” earth‐abundant replacements for closely‐related CIGSe, current research has focused on several key directions to control disorder, including: (i) examination of the interaction between processing conditions and atomic site disorder, (ii) isoelectronic cation substitution to introduce ionic size mismatch, and (iii) structural diversification beyond the zinc‐blende‐type coordination environment. In this review, recent efforts targeting accurate identification and engineering of anti‐site disorder in kesterite‐based CZTSSe are considered. Lessons learned from CZTSSe are applied to other complex chalcogenide semiconductors, in an effort to develop promising pathways to avoid anti‐site disordering and associated band tailing in future high‐performance earth‐abundant photovoltaic technologies.},
doi = {10.1002/aenm.201602366},
journal = {Advanced Energy Materials},
number = 11,
volume = 7,
place = {Germany},
year = {Fri Jan 13 00:00:00 EST 2017},
month = {Fri Jan 13 00:00:00 EST 2017}
}
https://doi.org/10.1002/aenm.201602366
Web of Science
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