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Title: Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air

Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [1] ;  [2] ;  [1] ;  [4] ;  [1] ;  [1]
  1. Department of Materials Science and Engineering, University of California, Berkeley CA 94720 USA, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA
  2. Department of Materials Science and Engineering, University of California, Berkeley CA 94720 USA
  3. Department of Chemical Engineering and Materials Science, University of Minnesota, MN 55455 USA
  4. Department of Materials Science and Engineering, Stanford University, Palo Alto CA 94305 USA
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 28; Journal Issue: 30; Related Information: CHORUS Timestamp: 2017-10-20 15:06:19; Journal ID: ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
Germany
Language:
English
OSTI Identifier:
1400561