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Title: Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

Authors:
ORCiD logo [1];  [1];  [1]; ORCiD logo [2]; ORCiD logo [2];  [1]
  1. Microsystems Technology Laboratories, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  2. Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitaetsplatz 2, 39106 Magdeburg, Germany
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1400423
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 16; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Zhang, Yuhao, Sun, Min, Piedra, Daniel, Hennig, Jonas, Dadgar, Armin, and Palacios, Tomás. Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes. United States: N. p., 2017. Web. doi:10.1063/1.4989599.
Zhang, Yuhao, Sun, Min, Piedra, Daniel, Hennig, Jonas, Dadgar, Armin, & Palacios, Tomás. Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes. United States. doi:10.1063/1.4989599.
Zhang, Yuhao, Sun, Min, Piedra, Daniel, Hennig, Jonas, Dadgar, Armin, and Palacios, Tomás. Mon . "Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes". United States. doi:10.1063/1.4989599.
@article{osti_1400423,
title = {Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes},
author = {Zhang, Yuhao and Sun, Min and Piedra, Daniel and Hennig, Jonas and Dadgar, Armin and Palacios, Tomás},
abstractNote = {},
doi = {10.1063/1.4989599},
journal = {Applied Physics Letters},
number = 16,
volume = 111,
place = {United States},
year = {2017},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4989599

Citation Metrics:
Cited by: 6 works
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Works referenced in this record:

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