Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

Zhang, Yuhao; Sun, Min; Piedra, Daniel; Hennig, Jonas; Dadgar, Armin; Palacios, Tomás

doi:10.1063/1.4989599

Title: Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

Authors:

^[1]; Sun, Min ^[1]; Piedra, Daniel ^[1];

^[2];

^[2]; Palacios, Tomás ^[1]

Microsystems Technology Laboratories, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitaetsplatz 2, 39106 Magdeburg, Germany

Publication Date:: 2017-10-16

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1400423

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 16; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Zhang, Yuhao, Sun, Min, Piedra, Daniel, Hennig, Jonas, Dadgar, Armin, and Palacios, Tomás. Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes.  United States: N. p., 2017. 
Web.  doi:10.1063/1.4989599.

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                    Zhang, Yuhao, Sun, Min, Piedra, Daniel, Hennig, Jonas, Dadgar, Armin, & Palacios, Tomás. Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes.  United States.  https://doi.org/10.1063/1.4989599

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                    Zhang, Yuhao, Sun, Min, Piedra, Daniel, Hennig, Jonas, Dadgar, Armin, and Palacios, Tomás. Mon .  
"Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes".  United States.  https://doi.org/10.1063/1.4989599.

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@article{osti_1400423,

  title        = {Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes},

  author       = {Zhang, Yuhao and Sun, Min and Piedra, Daniel and Hennig, Jonas and Dadgar, Armin and Palacios, Tomás},

  abstractNote = {},

  doi          = {10.1063/1.4989599},

  journal      = {Applied Physics Letters},

  number       = 16,

  volume       = 111,

  place        = {United States},

  year         = {2017},

  month        = {10}

}

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Works referenced in this record:

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Zhang, Yuhao; Sun, Min; Liu, Zhihong
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Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
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Beyond Thermal Management: Incorporating p-Diamond Back-Barriers and Cap Layers Into AlGaN/GaN HEMTs
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Zhang, Yuhao; Teo, Koon Hoo; Palacios, Tomas
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High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes
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Title: Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

Citation Formats

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors journal, July 2013

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates journal, September 2014

OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET journal, December 2016

Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers journal, May 2016

Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping journal, April 2016

Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping journal, January 2011

High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates journal, April 2017

AlGaN/GaN current aperture vertical electron transistors with regrown channels journal, February 2004

Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs journal, August 2002

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes journal, July 2015

Beyond Thermal Management: Incorporating p-Diamond Back-Barriers and Cap Layers Into AlGaN/GaN HEMTs journal, June 2016

Novel fully vertical GaN p–n diode on Si substrate grown by metalorganic chemical vapor deposition journal, October 2016

High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes journal, February 2017

Current crowding in GaN/InGaN light emitting diodes on insulating substrates journal, October 2001

A Method for Current Spreading Analysis and Electrode Pattern Design in Light-Emitting Diodes journal, May 2008

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown journal, December 2015

Sixteen years GaN on Si: Sixteen years GaN on Si journal, February 2015

Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison journal, March 2017

Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD journal, November 2016

Carrier mobility model for GaN journal, January 2003

Enhancing current spreading by simple electrode pattern design methodology in lateral GaN/InGaN LEDs journal, January 2009

On reduction of current leakage in GaN by carbon-doping journal, November 2016

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors
journal, July 2013

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates
journal, September 2014

OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET
journal, December 2016

Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers
journal, May 2016

Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping
journal, April 2016

Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping
journal, January 2011

High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
journal, April 2017

AlGaN/GaN current aperture vertical electron transistors with regrown channels
journal, February 2004

Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs
journal, August 2002

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
journal, July 2015

Beyond Thermal Management: Incorporating p-Diamond Back-Barriers and Cap Layers Into AlGaN/GaN HEMTs
journal, June 2016

Novel fully vertical GaN p–n diode on Si substrate grown by metalorganic chemical vapor deposition
journal, October 2016

High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes
journal, February 2017

Current crowding in GaN/InGaN light emitting diodes on insulating substrates
journal, October 2001

A Method for Current Spreading Analysis and Electrode Pattern Design in Light-Emitting Diodes
journal, May 2008

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
journal, December 2015

Sixteen years GaN on Si: Sixteen years GaN on Si
journal, February 2015

Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison
journal, March 2017

Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD
journal, November 2016

Carrier mobility model for GaN
journal, January 2003

Enhancing current spreading by simple electrode pattern design methodology in lateral GaN/InGaN LEDs
journal, January 2009

On reduction of current leakage in GaN by carbon-doping
journal, November 2016