Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

Zhang, Yuhao; Sun, Min; Piedra, Daniel; Hennig, Jonas; Dadgar, Armin; Palacios, Tomás

doi:10.1063/1.4989599

Title: Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

Journal Article · 20 October 2017 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.4989599 · OSTI ID:1400423

; Sun, Min; Piedra, Daniel;

;

; Palacios, Tomás

This paper studies the key parameters affecting on-resistance and current crowding in quasi-vertical GaN power devices by experiment and simulation. The current distribution in the drift region, n−-GaN, was found to be mainly determined by the sheet resistance of the current spreading layer, n+-GaN. The actual on-resistance of the drift region significantly depends on this current distribution rather than the intrinsic resistivity of the drift layer. As a result, the total specific on-resistance of quasi-vertical diodes shows a strong correlation with the device area and sheet resistance of the current spreading layer. By reducing the sheet resistance of the current spreading layer, the specific on-resistance of quasi-vertical GaN-on-Si power diodes has been reduced from ∼10 mΩ·cm2 to below 1 mΩ·cm2. Design space of the specific on-resistance at different breakdown voltage levels has also been revealed in optimized quasi-vertical GaN power diodes.

View Accepted Manuscript (Publisher)

Cite

Export

Save

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI ID:: 1400423

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 111 Journal Issue: 16; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 35 works

Citation information provided by
Web of Science

References (23)

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors Zhang, Yuhao; Sun, Min; Liu, Zhihong IEEE Transactions on Electron Devices, Vol. 60, Issue 7 https://doi.org/10.1109/TED.2013.2261072	journal	July 2013
1.5-kV and 2.2-m $\Omega $ -cm $^{2}$ Vertical GaN Transistors on Bulk-GaN Substrates Nie, Hui; Diduck, Quentin; Alvarez, Brian IEEE Electron Device Letters, Vol. 35, Issue 9 https://doi.org/10.1109/LED.2014.2339197	journal	September 2014
OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET Gupta, Chirag; Chan, Silvia H.; Enatsu, Yuuki IEEE Electron Device Letters, Vol. 37, Issue 12 https://doi.org/10.1109/LED.2016.2616508	journal	December 2016
Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers Zou, Xinbo; Zhang, Xu; Lu, Xing IEEE Electron Device Letters, Vol. 37, Issue 5 https://doi.org/10.1109/LED.2016.2548488	journal	May 2016
Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping Berger, Christoph; Lesnik, Andreas; Zettler, Thomas Journal of Crystal Growth, Vol. 440 https://doi.org/10.1016/j.jcrysgro.2016.01.027	journal	April 2016
Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping Dadgar, Armin; Bläsing, Jürgen; Diez, Annette Applied Physics Express, Vol. 4, Issue 1 https://doi.org/10.1143/APEX.4.011001	journal	January 2011
High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates Sun, Min; Zhang, Yuhao; Gao, Xiang IEEE Electron Device Letters, Vol. 38, Issue 4 https://doi.org/10.1109/LED.2017.2670925	journal	April 2017
AlGaN/GaN current aperture vertical electron transistors with regrown channels Ben-Yaacov, Ilan; Seck, Yee-Kwang; Mishra, Umesh K. Journal of Applied Physics, Vol. 95, Issue 4 https://doi.org/10.1063/1.1641520	journal	February 2004
Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs Kim, Hyunsoo; Park, Seong-Ju; Hwang, Hyunsang Applied Physics Letters, Vol. 81, Issue 7 https://doi.org/10.1063/1.1499994	journal	August 2002
Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes IEEE Transactions on Electron Devices, Vol. 62, Issue 7 https://doi.org/10.1109/TED.2015.2426711	journal	July 2015
Beyond Thermal Management: Incorporating p-Diamond Back-Barriers and Cap Layers Into AlGaN/GaN HEMTs Zhang, Yuhao; Teo, Koon Hoo; Palacios, Tomas IEEE Transactions on Electron Devices, Vol. 63, Issue 6 https://doi.org/10.1109/TED.2016.2553136	journal	June 2016
Novel fully vertical GaN p–n diode on Si substrate grown by metalorganic chemical vapor deposition Mase, Suguru; Urayama, Yuya; Hamada, Takeaki Applied Physics Express, Vol. 9, Issue 11 https://doi.org/10.7567/APEX.9.111005	journal	October 2016
High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes Zhang, Yuhao; Piedra, Daniel; Sun, Min IEEE Electron Device Letters, Vol. 38, Issue 2 https://doi.org/10.1109/LED.2016.2646669	journal	February 2017
Current crowding in GaN/InGaN light emitting diodes on insulating substrates Guo, X.; Schubert, E. F. Journal of Applied Physics, Vol. 90, Issue 8 https://doi.org/10.1063/1.1403665	journal	October 2001
A Method for Current Spreading Analysis and Electrode Pattern Design in Light-Emitting Diodes Hwang, Sungmin; Shim, Jongin IEEE Transactions on Electron Devices, Vol. 55, Issue 5 https://doi.org/10.1109/TED.2008.918414	journal	May 2008
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown Hu, Zongyang; Nomoto, Kazuki; Song, Bo Applied Physics Letters, Vol. 107, Issue 24 https://doi.org/10.1063/1.4937436	journal	December 2015
Sixteen years GaN on Si: Sixteen years GaN on Si Dadgar, Armin physica status solidi (b), Vol. 252, Issue 5 https://doi.org/10.1002/pssb.201451656	journal	February 2015
Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison Zhang, Xu; Zou, Xinbo; Lu, Xing IEEE Transactions on Electron Devices, Vol. 64, Issue 3 https://doi.org/10.1109/TED.2017.2647990	journal	March 2017
Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD Agarwal, Anchal; Gupta, Chirag; Enatsu, Yuuki Semiconductor Science and Technology, Vol. 31, Issue 12 https://doi.org/10.1088/0268-1242/31/12/125018	journal	November 2016
Carrier mobility model for GaN Mnatsakanov, Tigran T.; Levinshtein, Michael E.; Pomortseva, Lubov I. Solid-State Electronics, Vol. 47, Issue 1 https://doi.org/10.1016/S0038-1101(02)00256-3	journal	January 2003
GaN-on-Si Vertical Schottky and p-n Diodes Zhang, Yuhao; Sun, Min; Piedra, Daniel IEEE Electron Device Letters, Vol. 35, Issue 6, p. 618-620 https://doi.org/10.1109/LED.2014.2314637	journal	June 2014
Enhancing current spreading by simple electrode pattern design methodology in lateral GaN/InGaN LEDs Yun, J. S.; Shim, J. I.; Shin, D. S. Electronics Letters, Vol. 45, Issue 13 https://doi.org/10.1049/el.2009.0803	journal	January 2009
On reduction of current leakage in GaN by carbon-doping Fariza, Aqdas; Lesnik, Andreas; Bläsing, Jürgen Applied Physics Letters, Vol. 109, Issue 21 https://doi.org/10.1063/1.4968823	journal	November 2016

Similar Records

Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

Journal Article · 2022 · IEEE Transactions on Electron Devices · OSTI ID:1882896

Yates, Luke; Gunning, Brendan P.; Crawford, Mary H.; +8 more

High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination

Journal Article · 2018 · IEEE Electron Device Letters · OSTI ID:1505564

Fu, Houqiang; Fu, Kai; Huang, Xuanqi; +5 more

Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

Journal Article · 2015 · IEEE Transactions on Nuclear Science · OSTI ID:1239987

King, M. P.; Armstrong, A. M.; Dickerson, J. R.; +13 more

Title: Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

Citation Formats

References (23)

Similar Records

Related Subjects