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Title: Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS 2

Here, we exploit scanning probe controlled domain patterning in a ferroelectric top-layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS 2 between a transistor and a junction state. In the presence of a domain wall, MoS 2 exhibits rectified I-V that is well described by the thermionic emission model. The induced Schottky barrier height Φ eff Β varies from 0.38 eV to 0.57 eV and is tunabe by a SiO 2 global back-gate, while the tuning range of Φ eff Β the barrier height depends sensitively on the conduction band tail trapping states. Our work points to a new route to achieve programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.
 [1] ;  [1] ;  [2] ;  [1] ; ORCiD logo [1]
  1. Univ. of Nebraska-Lincoln, Lincoln, NE (United States)
  2. Arizona State Univ., Tempe, AZ (United States)
Publication Date:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 118; Journal Issue: 23; Journal ID: ISSN 0031-9007
American Physical Society (APS)
Research Org:
Univ. of Nebraska-Lincoln, Lincoln, NE (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
77 NANOSCIENCE AND NANOTECHNOLOGY; MoS2; P(VDF-TrFE); ferroelectric field effect; Schottky junction; scanning probe microscopy; ferroelectric domain
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1372585