In-situ Synchrotron X-ray Studies of the Microstructure and Stability of In2O3 Epitaxial Films
Abstract
We report on the synthesis, stability, and local structure of In2O3 thin films grown via rf-magnetron sputtering and characterized by in-situ x-ray scattering and focused x-ray nanodiffraction. We find that In2O3 deposited onto (0 0 1)-oriented single crystal yttria-stabilized zirconia substrates adopts a Stranski-Krastanov growth mode at a temperature of 850 degrees C, resulting in epitaxial, truncated square pyramids with (1 1 1) side walls. We find that at this temperature, the pyramids evaporate unless they are stabilized by a low flux of In2O3 from the magnetron source. We also find that the internal lattice structure of one such pyramid is made up of differently strained volumes, revealing local structural heterogeneity that may impact the properties of In2O3 nanostructures and films.
- Authors:
-
[2];
[3];
[3];
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Northern Illinois Univ., DeKalb, IL (United States). Dept. of Physics
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)
- Argonne National Lab. (ANL), Argonne, IL (United States). X-ray Science Division
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences and Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
- OSTI Identifier:
- 1413931
- Alternate Identifier(s):
- OSTI ID: 1400329; OSTI ID: 1411041
- Report Number(s):
- BNL-114467-2017-JA
Journal ID: ISSN 0003-6951; TRN: US1800592
- Grant/Contract Number:
- SC0012704; AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 111; Journal Issue: 16; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; X-rays; Epitaxy; Synchrotrons; Thin films; Radiowave and microwave technology
Citation Formats
Highland, M. J., Hruszkewycz, S. O., Fong, D. D., Thompson, Carol, Fuoss, P. H., Calvo-Almazan, I., Maddali, S., Ulvestad, A., Nazaretski, E., Huang, X., Yan, H., Chu, Y. S., Zhou, H., Baldo, P. M., and Eastman, J. A. In-situ Synchrotron X-ray Studies of the Microstructure and Stability of In2O3 Epitaxial Films. United States: N. p., 2017.
Web. doi:10.1063/1.4997773.
Highland, M. J., Hruszkewycz, S. O., Fong, D. D., Thompson, Carol, Fuoss, P. H., Calvo-Almazan, I., Maddali, S., Ulvestad, A., Nazaretski, E., Huang, X., Yan, H., Chu, Y. S., Zhou, H., Baldo, P. M., & Eastman, J. A. In-situ Synchrotron X-ray Studies of the Microstructure and Stability of In2O3 Epitaxial Films. United States. https://doi.org/10.1063/1.4997773
Highland, M. J., Hruszkewycz, S. O., Fong, D. D., Thompson, Carol, Fuoss, P. H., Calvo-Almazan, I., Maddali, S., Ulvestad, A., Nazaretski, E., Huang, X., Yan, H., Chu, Y. S., Zhou, H., Baldo, P. M., and Eastman, J. A. Mon .
"In-situ Synchrotron X-ray Studies of the Microstructure and Stability of In2O3 Epitaxial Films". United States. https://doi.org/10.1063/1.4997773. https://www.osti.gov/servlets/purl/1413931.
@article{osti_1413931,
title = {In-situ Synchrotron X-ray Studies of the Microstructure and Stability of In2O3 Epitaxial Films},
author = {Highland, M. J. and Hruszkewycz, S. O. and Fong, D. D. and Thompson, Carol and Fuoss, P. H. and Calvo-Almazan, I. and Maddali, S. and Ulvestad, A. and Nazaretski, E. and Huang, X. and Yan, H. and Chu, Y. S. and Zhou, H. and Baldo, P. M. and Eastman, J. A.},
abstractNote = {We report on the synthesis, stability, and local structure of In2O3 thin films grown via rf-magnetron sputtering and characterized by in-situ x-ray scattering and focused x-ray nanodiffraction. We find that In2O3 deposited onto (0 0 1)-oriented single crystal yttria-stabilized zirconia substrates adopts a Stranski-Krastanov growth mode at a temperature of 850 degrees C, resulting in epitaxial, truncated square pyramids with (1 1 1) side walls. We find that at this temperature, the pyramids evaporate unless they are stabilized by a low flux of In2O3 from the magnetron source. We also find that the internal lattice structure of one such pyramid is made up of differently strained volumes, revealing local structural heterogeneity that may impact the properties of In2O3 nanostructures and films.},
doi = {10.1063/1.4997773},
journal = {Applied Physics Letters},
number = 16,
volume = 111,
place = {United States},
year = {Mon Oct 16 00:00:00 EDT 2017},
month = {Mon Oct 16 00:00:00 EDT 2017}
}
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Works referencing / citing this record:
Degradation Mechanism of Vanadium Oxide Films When Grown on Y‐Stabilized ZrO 2 Above 500 °C
journal, October 2019
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