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Title: Interface Engineering of Domain Structures in BiFeO 3 Thin Films

A wealth of fascinating phenomena have been discovered at the BiFeO 3 domain walls, examples such as domain wall conductivity, photovoltaic effects, and magnetoelectric coupling. Thus, the ability to precisely control the domain structures and accurately study their switching behaviors is critical to realize the next generation of novel devices based on domain wall functionalities. In this work, the introduction of a dielectric layer leads to the tunability of the depolarization field both in the multilayers and superlattices, which provides a novel approach to control the domain patterns of BiFeO 3 films. Moreover, we are able to study the switching behavior of the first time obtained periodic 109° stripe domains with a thick bottom electrode. Besides, the precise controlling of pure 71° and 109° periodic stripe domain walls enable us to make a clear demonstration that the exchange bias in the ferromagnet/BiFeO 3 system originates from 109° domain walls. Lastly, our findings provide future directions to study the room temperature electric field control of exchange bias and open a new pathway to explore the room temperature multiferroic vortices in the BiFeO 3 system.
Authors:
ORCiD logo [1] ;  [2] ;  [3] ;  [2] ;  [4] ;  [2] ;  [4] ;  [5] ;  [6] ;  [5] ;  [7] ;  [8] ; ORCiD logo [3] ;  [4] ;  [9] ;  [4]
  1. South China Normal Univ., Guangzhou (China). Inst. for Advanced Materials and Guangdong Provincial Key Lab. of Quantum Engineering and Quantum Materials; Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering and Dept. of Physics; South China Univ. of Technology (SCUT), Guangzhou (China). School of Materials Science and Engineering
  2. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  4. Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences
  5. South China Normal Univ., Guangzhou (China). Inst. for Advanced Materials and Guangdong Provincial Key Lab. of Quantum Engineering and Quantum Materials
  6. Huazhong Univ. of Science and Technology of China, Wuhan (China). School of Optical and Electronic Information
  7. South China Univ. of Technology, Guangzhou (China). School of Materials Science and Engineering
  8. South Univ. of Science and Technology of China, Shenzhen (China). Dept. of Physics
  9. South China Normal Univ., Guangzhou (China). Inst. for Advanced Materials and Guangdong Provincial Key Lab. of Quantum Engineering and Quantum Materials; Nanjing Univ., Nanjing (China). Lab. of Solid State Microstructures and Innovation Center for Advanced Microstructures
Publication Date:
Grant/Contract Number:
AC05-00OR22725; 2016YFA0201002; EEC-1160504; ECCS-0939514; 51431006; 11474146; 61674062; 51602110; 2016201604030070; AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 17; Journal Issue: 1; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Key Research and Development Program of China; National Science Foundation (NSF); National Natural Science Foundation of China (NNSFC); Science and Technology Program of Guangzhou (China)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BiFeO3; depolarization field; domain wall; exchange bias; multiferroic; superlattices
OSTI Identifier:
1400211
Alternate Identifier(s):
OSTI ID: 1459377