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Title: Infrared absorption and visible transparency in heavily doped p-type BaSnO 3

The recent experimental work shows that perovskite BaSnO 3 can be heavily doped by K to become a stable p-type semiconductor. Here, we find that p-type perovskite BaSnO 3 retains transparency for visible light while absorbing strongly in the infrared below 1.5 eV. The origin of the remarkable optical transparency even with heavy doping is that the interband transitions that are enabled by empty states at the top of the valence band are concentrated mainly in the energy range from 0.5 to 1.5 eV, i.e., not extending past the near IR. In contrast to n-type, the Burstein-Moss shift is slightly negative, but very small reflecting the heavier valence bands relative to the conduction bands.
Authors:
 [1] ;  [1] ; ORCiD logo [1]
  1. Univ. of Missouri, Columbia, MO (United States)
Publication Date:
Grant/Contract Number:
SC0014607
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 5; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Univ. of Missouri, Columbia, MO (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Transparent conductor
OSTI Identifier:
1399687
Alternate Identifier(s):
OSTI ID: 1351029