Using gapped topological surface states of Bi2Se3 films in a field effect transistor
Abstract
Three dimensional topological insulators are insulators with topologically protected surface states that can have a high band velocity and high mobility at room temperature. This then suggests electronic applications that exploit these surface states, but the lack of a band gap poses a fundamental difficulty. We report a first principles study based on density functional theory for thin Bi2Se3 films in the context of a field effect transistor. It is known that a gap is induced in thin layers due to hybridization between the top and bottom surfaces, but it is not known whether it is possible to use the topological states in this type of configuration. In particular, it is unclear whether the benefits of topological protection can be retained to a sufficient degree. We also show that there is a thickness regime in which the small gap induced by hybridization between the two surfaces is sufficient to obtain transistor operation at room temperature, and furthermore, that the band velocity and spin texture that are important for the mobility are preserved for Fermi levels of relevance to device application.
- Authors:
-
- Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
- Publication Date:
- Research Org.:
- Univ. of Missouri, Columbia, MO (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1399574
- Alternate Identifier(s):
- OSTI ID: 1361775
- Grant/Contract Number:
- SC0014607
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 121; Journal Issue: 6; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Topological insulator
Citation Formats
Sun, Jifeng, and Singh, David J. Using gapped topological surface states of Bi2Se3 films in a field effect transistor. United States: N. p., 2017.
Web. doi:10.1063/1.4975819.
Sun, Jifeng, & Singh, David J. Using gapped topological surface states of Bi2Se3 films in a field effect transistor. United States. https://doi.org/10.1063/1.4975819
Sun, Jifeng, and Singh, David J. Wed .
"Using gapped topological surface states of Bi2Se3 films in a field effect transistor". United States. https://doi.org/10.1063/1.4975819. https://www.osti.gov/servlets/purl/1399574.
@article{osti_1399574,
title = {Using gapped topological surface states of Bi2Se3 films in a field effect transistor},
author = {Sun, Jifeng and Singh, David J.},
abstractNote = {Three dimensional topological insulators are insulators with topologically protected surface states that can have a high band velocity and high mobility at room temperature. This then suggests electronic applications that exploit these surface states, but the lack of a band gap poses a fundamental difficulty. We report a first principles study based on density functional theory for thin Bi2Se3 films in the context of a field effect transistor. It is known that a gap is induced in thin layers due to hybridization between the top and bottom surfaces, but it is not known whether it is possible to use the topological states in this type of configuration. In particular, it is unclear whether the benefits of topological protection can be retained to a sufficient degree. We also show that there is a thickness regime in which the small gap induced by hybridization between the two surfaces is sufficient to obtain transistor operation at room temperature, and furthermore, that the band velocity and spin texture that are important for the mobility are preserved for Fermi levels of relevance to device application.},
doi = {10.1063/1.4975819},
journal = {Journal of Applied Physics},
number = 6,
volume = 121,
place = {United States},
year = {Wed Feb 08 00:00:00 EST 2017},
month = {Wed Feb 08 00:00:00 EST 2017}
}
Web of Science
Works referenced in this record:
Two-dimensional surface charge transport in topological insulators
journal, October 2010
- Culcer, Dimitrie; Hwang, E. H.; Stanescu, Tudor D.
- Physical Review B, Vol. 82, Issue 15, Article No. 155457
Generalized Gradient Approximation Made Simple
journal, October 1996
- Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
- Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
Electronic structure and thermoelectric properties of layered materials
journal, August 2009
- Zhang, Lijun; Singh, D. J.
- Physical Review B, Vol. 80, Issue 7
Carrier Transport in Two-Dimensional Graphene Layers
journal, May 2007
- Hwang, E. H.; Adam, S.; Sarma, S. Das
- Physical Review Letters, Vol. 98, Issue 18, Article No. 186806
Projector augmented-wave method
journal, December 1994
- Blöchl, P. E.
- Physical Review B, Vol. 50, Issue 24, p. 17953-17979
MoS2 transistors with 1-nanometer gate lengths
journal, October 2016
- Desai, S. B.; Madhvapathy, S. R.; Sachid, A. B.
- Science, Vol. 354, Issue 6308
Spin-Orbital Texture in Topological Insulators
journal, August 2013
- Zhang, Haijun; Liu, Chao-Xing; Zhang, Shou-Cheng
- Physical Review Letters, Vol. 111, Issue 6
Topological insulators with inversion symmetry
journal, July 2007
- Fu, Liang; Kane, C. L.
- Physical Review B, Vol. 76, Issue 4
Oscillatory crossover from two-dimensional to three-dimensional topological insulators
journal, January 2010
- Liu, Chao-Xing; Zhang, HaiJun; Yan, Binghai
- Physical Review B, Vol. 81, Issue 4
Robustness of Topologically Protected Surface States in Layering of Thin Films
journal, October 2010
- Park, Kyungwha; Heremans, J. J.; Scarola, V. W.
- Physical Review Letters, Vol. 105, Issue 18
The crystal structure of Bi2Te3−xSex
journal, March 1963
- Nakajima, Seizo
- Journal of Physics and Chemistry of Solids, Vol. 24, Issue 3
Topological insulator Bi 2 Se 3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
journal, December 2012
- Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.
- Journal of Applied Physics, Vol. 112, Issue 12
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996
- Kresse, G.; Furthmüller, J.
- Physical Review B, Vol. 54, Issue 16, p. 11169-11186
Observation of quantum-tunnelling-modulated spin texture in ultrathin topological insulator Bi2Se3 films
journal, May 2014
- Neupane, Madhab; Richardella, Anthony; Sánchez-Barriga, Jaime
- Nature Communications, Vol. 5, Issue 1
Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
journal, April 2012
- Kim, Dohun; Cho, Sungjae; Butch, Nicholas P.
- Nature Physics, Vol. 8, Issue 6
Connecting Thermoelectric Performance and Topological-Insulator Behavior: and from First Principles
journal, January 2015
- Shi, Hongliang; Parker, David; Du, Mao-Hua
- Physical Review Applied, Vol. 3, Issue 1
Surface-Dominated Conduction in a 6 nm thick Bi 2 Se 3 Thin Film
journal, February 2012
- He, Liang; Xiu, Faxian; Yu, Xinxin
- Nano Letters, Vol. 12, Issue 3
First-principles investigations of the atomic, electronic, and thermoelectric properties of equilibrium and strained Bi Se and Bi Te including van der Waals interactions
journal, November 2012
- Luo, Xin; Sullivan, Michael B.; Quek, Su Ying
- Physical Review B, Vol. 86, Issue 18
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
journal, May 2009
- Zhang, Haijun; Liu, Chao-Xing; Qi, Xiao-Liang
- Nature Physics, Vol. 5, Issue 6, p. 438-442
Electronic transport in two-dimensional graphene
journal, May 2011
- Das Sarma, S.; Adam, Shaffique; Hwang, E. H.
- Reviews of Modern Physics, Vol. 83, Issue 2, p. 407-470
Topological Insulators in Three Dimensions
journal, March 2007
- Fu, Liang; Kane, C. L.; Mele, E. J.
- Physical Review Letters, Vol. 98, Issue 10, Article No. 106803
Topological surface states protected from backscattering by chiral spin texture
journal, August 2009
- Roushan, Pedram; Seo, Jungpil; Parker, Colin V.
- Nature, Vol. 460, Issue 7259, p. 1106-1109
Surface and substrate induced effects on thin films of the topological insulators Bi Se and Bi Te
journal, May 2013
- Liu, Wenliang; Peng, Xiangyang; Wei, Xiaolin
- Physical Review B, Vol. 87, Issue 20
Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors
journal, April 2013
- Zhu, Hao; Richter, Curt A.; Zhao, Erhai
- Scientific Reports, Vol. 3, Issue 1
Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit
journal, July 2010
- Li, Yao-Yi; Wang, Guang; Zhu, Xie-Gang
- Advanced Materials, Vol. 22, Issue 36
Spin Polarization and Transport of Surface States in the Topological Insulators and from First Principles
journal, December 2010
- Yazyev, Oleg V.; Moore, Joel E.; Louie, Steven G.
- Physical Review Letters, Vol. 105, Issue 26
Layer-By-Layer Entangled Spin-Orbital Texture of the Topological Surface State in
journal, May 2013
- Zhu, Z. -H.; Veenstra, C. N.; Levy, G.
- Physical Review Letters, Vol. 110, Issue 21
Gate-Controlled Surface Conduction in Na-Doped Bi 2 Te 3 Topological Insulator Nanoplates
journal, February 2012
- Wang, Yong; Xiu, Faxian; Cheng, Lina
- Nano Letters, Vol. 12, Issue 3
Acoustic impedance and interface phonon scattering in Bi Te and other semiconducting materials
journal, January 2013
- Chen, Xin; Parker, David; Singh, David J.
- Physical Review B, Vol. 87, Issue 4
Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3Nanodevices
journal, December 2010
- Steinberg, Hadar; Gardner, Dillon R.; Lee, Young S.
- Nano Letters, Vol. 10, Issue 12, p. 5032-5036
First-principles study of the stability of BN and C
journal, October 2001
- Janotti, A.; Wei, S. -H.; Singh, D. J.
- Physical Review B, Vol. 64, Issue 17
BoltzTraP. A code for calculating band-structure dependent quantities
journal, July 2006
- Madsen, Georg K. H.; Singh, David J.
- Computer Physics Communications, Vol. 175, Issue 1
Spin Texture of Thin Films in the Quantum Tunneling Limit
journal, February 2014
- Landolt, Gabriel; Schreyeck, Steffen; Eremeev, Sergey V.
- Physical Review Letters, Vol. 112, Issue 5
Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment
journal, February 2012
- Chen, C.; He, S.; Weng, H.
- Proceedings of the National Academy of Sciences, Vol. 109, Issue 10
Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit
journal, June 2010
- Zhang, Yi; He, Ke; Chang, Cui-Zu
- Nature Physics, Vol. 6, Issue 8
First-principles studies of the three-dimensional strong topological insulators Bi 2 Te 3 , Bi 2 Se 3 and Sb 2 Te 3
journal, June 2010
- Zhang, Wei; Yu, Rui; Zhang, Hai-Jun
- New Journal of Physics, Vol. 12, Issue 6
Topological Dangling Bonds with Large Spin Splitting and Enhanced Spin Polarization on the Surfaces of Bi 2 Se 3
journal, April 2013
- Lin, Hsin; Das, Tanmoy; Okada, Yoshinori
- Nano Letters, Vol. 13, Issue 5
Quasiparticle effects in the bulk and surface-state bands of Bi Se and Bi Te topological insulators
journal, April 2012
- Yazyev, Oleg V.; Kioupakis, Emmanouil; Moore, Joel E.
- Physical Review B, Vol. 85, Issue 16
Insulating Behavior in Ultrathin Bismuth Selenide Field Effect Transistors
journal, May 2011
- Cho, Sungjae; Butch, Nicholas P.; Paglione, Johnpierre
- Nano Letters, Vol. 11, Issue 5
Semiempirical van der Waals correction to the density functional description of solids and molecular structures
journal, May 2006
- Ortmann, F.; Bechstedt, F.; Schmidt, W. G.
- Physical Review B, Vol. 73, Issue 20
A tunable topological insulator in the spin helical Dirac transport regime
journal, July 2009
- Hsieh, D.; Xia, Y.; Qian, D.
- Nature, Vol. 460, Issue 7259
Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi Se
journal, May 2012
- Wei, Peng; Wang, Zhiyong; Liu, Xinfei
- Physical Review B, Vol. 85, Issue 20
Spin Texture and Circular Dichroism in Photoelectron Spectroscopy from the Topological Insulator : First-Principles Photoemission Calculations
journal, July 2012
- Mirhosseini, H.; Henk, J.
- Physical Review Letters, Vol. 109, Issue 3
Massive Dirac fermions and spin physics in an ultrathin film of topological insulator
journal, March 2010
- Lu, Hai-Zhou; Shan, Wen-Yu; Yao, Wang
- Physical Review B, Vol. 81, Issue 11
Anomalous finite size effects on surface states in the topological insulator
journal, November 2009
- Linder, Jacob; Yokoyama, Takehito; Sudbø, Asle
- Physical Review B, Vol. 80, Issue 20
Electronic structure calculations of solids using the WIEN2k package for material sciences
journal, August 2002
- Schwarz, K.; Blaha, P.; Madsen, G. K. H.
- Computer Physics Communications, Vol. 147, Issue 1-2
Works referencing / citing this record:
Optical evidence for blue shift in topological insulator bismuth selenide in the few-layer limit
journal, May 2017
- Sapkota, Yub Raj; Alkabsh, Asma; Walber, Aaron
- Applied Physics Letters, Vol. 110, Issue 18
Bulk transport properties of bismuth selenide thin films grown by magnetron sputtering approaching the two-dimensional limit
journal, September 2018
- Sapkota, Yub Raj; Mazumdar, Dipanjan
- Journal of Applied Physics, Vol. 124, Issue 10
2D group 6 transition metal dichalcogenides toward wearable electronics and optoelectronics
journal, January 2020
- Yao, Jiandong; Yang, Guowei
- Journal of Applied Physics, Vol. 127, Issue 3
The Property, Preparation and Application of Topological Insulators: A Review
journal, July 2017
- Tian, Wenchao; Yu, Wenbo; Shi, Jing
- Materials, Vol. 10, Issue 7
The Property, Preparation and Application of Topological Insulators: A Review
journal, July 2017
- Tian, Wenchao; Yu, Wenbo; Shi, Jing
- Materials, Vol. 10, Issue 7