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Title: Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised $${\rm Si}_{0.55}{\rm Ge}_{0.45}$$ Source/Drain

Here, the total ionizing dose response of Ge channel pFETs with raised Si 0.55Ge 0.45 source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.
Authors:
 [1] ;  [2] ;  [2] ;  [2] ;  [2] ; ORCiD logo [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [3] ;  [3] ;  [3] ;  [3] ; ORCiD logo [4] ;  [2] ;  [2]
  1. Beijing Microelectronics Technology Institute, Beijing (China)
  2. Vanderbilt Univ., Nashville, TN (United States)
  3. Imec, Leuven (Belgium)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 62; Journal Issue: 6; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; Ge pFET; negative bias temperature instability (NBTI); radiation-induced leakage; threshold-voltage shift; total ionizing dose (TID); transconductance degradation
OSTI Identifier:
1399555