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Title: Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised $${\rm Si}_{0.55}{\rm Ge}_{0.45}$$ Source/Drain

Here, the total ionizing dose response of Ge channel pFETs with raised Si 0.55Ge 0.45 source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.
Authors:
 [1] ;  [2] ;  [2] ;  [2] ;  [2] ; ORCiD logo [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [3] ;  [3] ;  [3] ;  [3] ; ORCiD logo [4] ;  [2] ;  [2]
  1. Beijing Microelectronics Technology Institute, Beijing (China)
  2. Vanderbilt Univ., Nashville, TN (United States)
  3. Imec, Leuven (Belgium)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 62; Journal Issue: 6; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; Ge pFET; negative bias temperature instability (NBTI); radiation-induced leakage; threshold-voltage shift; total ionizing dose (TID); transconductance degradation
OSTI Identifier:
1399555

Wang, Liang, Zhang, En Xia, Schrimpf, Ronald D., Fleetwood, Daniel M., Duan, Guo Xing, Hachtel, Jordan A., Zhang, Cher Xuan, Reed, Robert A., Samsel, Isaak K., Alles, Michael L., Witters, Liesbeth, Collaert, Nadine, Linten, Dimitri, Mitard, Jerome, Chisholm, Matthew F., Pantelides, Sokrates T., and Galloway, Kenneth F.. Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised ${\rm Si}_{0.55}{\rm Ge}_{0.45}$ Source/Drain. United States: N. p., Web. doi:10.1109/TNS.2015.2489019.
Wang, Liang, Zhang, En Xia, Schrimpf, Ronald D., Fleetwood, Daniel M., Duan, Guo Xing, Hachtel, Jordan A., Zhang, Cher Xuan, Reed, Robert A., Samsel, Isaak K., Alles, Michael L., Witters, Liesbeth, Collaert, Nadine, Linten, Dimitri, Mitard, Jerome, Chisholm, Matthew F., Pantelides, Sokrates T., & Galloway, Kenneth F.. Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised ${\rm Si}_{0.55}{\rm Ge}_{0.45}$ Source/Drain. United States. doi:10.1109/TNS.2015.2489019.
Wang, Liang, Zhang, En Xia, Schrimpf, Ronald D., Fleetwood, Daniel M., Duan, Guo Xing, Hachtel, Jordan A., Zhang, Cher Xuan, Reed, Robert A., Samsel, Isaak K., Alles, Michael L., Witters, Liesbeth, Collaert, Nadine, Linten, Dimitri, Mitard, Jerome, Chisholm, Matthew F., Pantelides, Sokrates T., and Galloway, Kenneth F.. 2015. "Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised ${\rm Si}_{0.55}{\rm Ge}_{0.45}$ Source/Drain". United States. doi:10.1109/TNS.2015.2489019. https://www.osti.gov/servlets/purl/1399555.
@article{osti_1399555,
title = {Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised ${\rm Si}_{0.55}{\rm Ge}_{0.45}$ Source/Drain},
author = {Wang, Liang and Zhang, En Xia and Schrimpf, Ronald D. and Fleetwood, Daniel M. and Duan, Guo Xing and Hachtel, Jordan A. and Zhang, Cher Xuan and Reed, Robert A. and Samsel, Isaak K. and Alles, Michael L. and Witters, Liesbeth and Collaert, Nadine and Linten, Dimitri and Mitard, Jerome and Chisholm, Matthew F. and Pantelides, Sokrates T. and Galloway, Kenneth F.},
abstractNote = {Here, the total ionizing dose response of Ge channel pFETs with raised Si0.55Ge0.45 source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.},
doi = {10.1109/TNS.2015.2489019},
journal = {IEEE Transactions on Nuclear Science},
number = 6,
volume = 62,
place = {United States},
year = {2015},
month = {12}
}