Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime
A distributed impedance “field cage” structure is proposed and evaluated for electric field control in GaN-based, lateral high electron mobility transistors (HEMTs) operating as kilovolt-range power devices. In this structure, a resistive voltage divider is used to control the electric field throughout the active region. The structure complements earlier proposals utilizing floating field plates that did not employ resistively connected elements. Transient results, not previously reported for field plate schemes using either floating or resistively connected field plates, are presented for ramps of dV ds /dt = 100 V/ns. For both DC and transient results, the voltage between the gate and drain is laterally distributed, ensuring the electric field profile between the gate and drain remains below the critical breakdown field as the source-to-drain voltage is increased. Our scheme indicates promise for achieving breakdown voltage scalability to a few kV.
- Authors:
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[1]
; [2]
; [3]
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; [1]
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- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Pennsylvania State Univ., University Park, PA (United States)
- Intel Corporation, Boise, ID (United States)
- Publication Date:
- Report Number(s):
- SAND-2017-6267J; SAND2016-12707J
Journal ID: ISSN 0018-9383; 654451
- Grant/Contract Number:
- AC04-94AL85000
- Type:
- Accepted Manuscript
- Journal Name:
- IEEE Transactions on Electron Devices
- Additional Journal Information:
- Journal Volume: 64; Journal Issue: 9; Journal ID: ISSN 0018-9383
- Publisher:
- IEEE
- Research Org:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org:
- USDOE National Nuclear Security Administration (NNSA)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
- OSTI Identifier:
- 1399503
- Alternate Identifier(s):
- OSTI ID: 1399881
Tierney, Brian D., Choi, Sukwon, DasGupta, Sandeepan, Dickerson, Jeramy R., Reza, Shahed, Kaplar, Robert J., Baca, Albert G., and Marinella, Matthew J.. Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime. United States: N. p.,
Web. doi:10.1109/ted.2017.2729544.
Tierney, Brian D., Choi, Sukwon, DasGupta, Sandeepan, Dickerson, Jeramy R., Reza, Shahed, Kaplar, Robert J., Baca, Albert G., & Marinella, Matthew J.. Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime. United States. doi:10.1109/ted.2017.2729544.
Tierney, Brian D., Choi, Sukwon, DasGupta, Sandeepan, Dickerson, Jeramy R., Reza, Shahed, Kaplar, Robert J., Baca, Albert G., and Marinella, Matthew J.. 2017.
"Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime". United States.
doi:10.1109/ted.2017.2729544. https://www.osti.gov/servlets/purl/1399503.
@article{osti_1399503,
title = {Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime},
author = {Tierney, Brian D. and Choi, Sukwon and DasGupta, Sandeepan and Dickerson, Jeramy R. and Reza, Shahed and Kaplar, Robert J. and Baca, Albert G. and Marinella, Matthew J.},
abstractNote = {A distributed impedance “field cage” structure is proposed and evaluated for electric field control in GaN-based, lateral high electron mobility transistors (HEMTs) operating as kilovolt-range power devices. In this structure, a resistive voltage divider is used to control the electric field throughout the active region. The structure complements earlier proposals utilizing floating field plates that did not employ resistively connected elements. Transient results, not previously reported for field plate schemes using either floating or resistively connected field plates, are presented for ramps of dVds /dt = 100 V/ns. For both DC and transient results, the voltage between the gate and drain is laterally distributed, ensuring the electric field profile between the gate and drain remains below the critical breakdown field as the source-to-drain voltage is increased. Our scheme indicates promise for achieving breakdown voltage scalability to a few kV.},
doi = {10.1109/ted.2017.2729544},
journal = {IEEE Transactions on Electron Devices},
number = 9,
volume = 64,
place = {United States},
year = {2017},
month = {8}
}
- Free Publicly Accessible Full Text
-
Accepted Manuscript (DOE)
- Publisher's Version of Record
- https://doi.org/10.1109/ted.2017.2729544