Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime
A distributed impedance “field cage” structure is proposed and evaluated for electric field control in GaN-based, lateral high electron mobility transistors (HEMTs) operating as kilovolt-range power devices. In this structure, a resistive voltage divider is used to control the electric field throughout the active region. The structure complements earlier proposals utilizing floating field plates that did not employ resistively connected elements. Transient results, not previously reported for field plate schemes using either floating or resistively connected field plates, are presented for ramps of dVds /dt = 100 V/ns. For both DC and transient results, the voltage between the gate and drain is laterally distributed, ensuring the electric field profile between the gate and drain remains below the critical breakdown field as the source-to-drain voltage is increased. Our scheme indicates promise for achieving breakdown voltage scalability to a few kV.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1399503
- Alternate ID(s):
- OSTI ID: 1399881
- Report Number(s):
- SAND--2017-6267J; 654451
- Journal Information:
- IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 9 Vol. 64; ISSN 0018-9383
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors
Passivation of AlN/GaN HEMTs Using Ozone Treatment