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Title: Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials: Transmission electron microscopy based interface analysis

Authors:
 [1] ;  [2] ;  [2] ;  [3] ;  [4]
  1. Department of Materials Science and Engineering, University of Central Florida, Orlando FL USA, Florida Solar Energy Center, University of Central Florida, Cocoa FL USA, c-Si Division, U.S. Photovoltaic Manufacturing Consortium, Orlando FL USA
  2. Fraunhofer-Institute for Solar Energy Systems ISE, Freiburg Germany
  3. Department of Materials Science and Engineering, University of Central Florida, Orlando FL USA, Florida Solar Energy Center, University of Central Florida, Cocoa FL USA, c-Si Division, U.S. Photovoltaic Manufacturing Consortium, Orlando FL USA, CREOL, the College of Optics & Photonics, University of Central Florida, Orlando FL USA
  4. Florida Solar Energy Center, University of Central Florida, Cocoa FL USA, c-Si Division, U.S. Photovoltaic Manufacturing Consortium, Orlando FL USA
Publication Date:
Grant/Contract Number:
EE0004947
Type:
Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi. A, Applications and Materials Science
Additional Journal Information:
Journal Name: Physica Status Solidi. A, Applications and Materials Science Journal Volume: 214 Journal Issue: 10; Journal ID: ISSN 1862-6300
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
Germany
Language:
English
OSTI Identifier:
1399158

Ali, Haider, Moldovan, Anamaria, Mack, Sebastian, Schoenfeld, Winston V., and Davis, Kristopher O.. Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials: Transmission electron microscopy based interface analysis. Germany: N. p., Web. doi:10.1002/pssa.201700286.
Ali, Haider, Moldovan, Anamaria, Mack, Sebastian, Schoenfeld, Winston V., & Davis, Kristopher O.. Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials: Transmission electron microscopy based interface analysis. Germany. doi:10.1002/pssa.201700286.
Ali, Haider, Moldovan, Anamaria, Mack, Sebastian, Schoenfeld, Winston V., and Davis, Kristopher O.. 2017. "Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials: Transmission electron microscopy based interface analysis". Germany. doi:10.1002/pssa.201700286.
@article{osti_1399158,
title = {Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials: Transmission electron microscopy based interface analysis},
author = {Ali, Haider and Moldovan, Anamaria and Mack, Sebastian and Schoenfeld, Winston V. and Davis, Kristopher O.},
abstractNote = {},
doi = {10.1002/pssa.201700286},
journal = {Physica Status Solidi. A, Applications and Materials Science},
number = 10,
volume = 214,
place = {Germany},
year = {2017},
month = {6}
}

Works referenced in this record:

Surface passivation of crystalline silicon solar cells: a review
journal, January 2000