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Title: Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials: Transmission electron microscopy based interface analysis

Authors:
 [1] ;  [2] ;  [2] ;  [3] ;  [4]
  1. Department of Materials Science and Engineering, University of Central Florida, Orlando FL USA, Florida Solar Energy Center, University of Central Florida, Cocoa FL USA, c-Si Division, U.S. Photovoltaic Manufacturing Consortium, Orlando FL USA
  2. Fraunhofer-Institute for Solar Energy Systems ISE, Freiburg Germany
  3. Department of Materials Science and Engineering, University of Central Florida, Orlando FL USA, Florida Solar Energy Center, University of Central Florida, Cocoa FL USA, c-Si Division, U.S. Photovoltaic Manufacturing Consortium, Orlando FL USA, CREOL, the College of Optics & Photonics, University of Central Florida, Orlando FL USA
  4. Florida Solar Energy Center, University of Central Florida, Cocoa FL USA, c-Si Division, U.S. Photovoltaic Manufacturing Consortium, Orlando FL USA
Publication Date:
Grant/Contract Number:
EE0004947
Type:
Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi. A, Applications and Materials Science
Additional Journal Information:
Journal Volume: 214; Journal Issue: 10; Related Information: CHORUS Timestamp: 2018-08-13 16:46:53; Journal ID: ISSN 1862-6300
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
Germany
Language:
English
OSTI Identifier:
1399158