Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices
This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiC MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.
[1]- Publication Date:
- Grant/Contract Number:
- AC05-00OR22725
- Type:
- Accepted Manuscript
- Journal Name:
- IEEE Transactions on Power Electronics
- Additional Journal Information:
- Journal Volume: 32; Journal Issue: 12; Journal ID: ISSN 0885-8993
- Publisher:
- IEEE
- Research Org:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org:
- USDOE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 30 DIRECT ENERGY CONVERSION; crosstalk suppression; fast switching; gate drive IC; intelligent gate drive (IGD); phase-leg configuration; silicon carbide (SiC)
- OSTI Identifier:
- 1399114
- Free Publicly Accessible Full Text
-
Accepted Manuscript (DOE)
- Publisher's Version of Record
- https://doi.org/10.1109/TPEL.2017.2655496