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This content will become publicly available on October 11, 2018

Title: Weak antilocalization effect due to topological surface states in Bi 2 Se 2.1 Te 0.9

Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5]
  1. Idaho National Laboratory, 2525 Fremont Ave., Idaho Falls, Idaho 83402, USA
  2. National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32306-4005, USA
  3. Institute of Optical Materials and Technology, Bulgarian Academy of Sciences, Academy G. Bontchev Street 109, Sofia 1113, Bulgaria
  4. TCSUH and Department of Physics, University of Houston, 3369 Cullen Boulevard, Houston, Texas 77204-5002, USA
  5. TCSUH and Department of Physics, University of Houston, 3369 Cullen Boulevard, Houston, Texas 77204-5002, USA, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 14; Related Information: CHORUS Timestamp: 2018-02-14 13:41:08; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1399058