Mechanically controlling the reversible phase transformation from zinc blende to wurtzite in AlN
Abstract
III–V and other binary octet semiconductors often take two phase forms—wurtzite (wz) and zinc blende (zb) crystal structures—with distinct functional performance at room temperature. Here, we investigate how to control the synthesized phase structure to either wz or zb phase by tuning the interfacial strain by taking AlN as a representative III–V compound. Furthermore, by applying in situ mechanical tests at atomic scale in a transmission electron microscope, we observed the reversible phase transformation from zb to wz, and characterized the transition path—the collective glide of Shockley partials on every two {111} planes of the zb AlN.
- Authors:
-
- Center for Integrated Nanotechnologies, MPA-CINT, Los Alamos National Laboratory, Los Alamos, NM, USA, Department of Physics, Indiana University, Bloomington, IN, USA
- Materials Science and Technology Division, MST-8, Los Alamos National Laboratory, Los Alamos, NM, USA
- Center for Integrated Nanotechnologies, MPA-CINT, Los Alamos National Laboratory, Los Alamos, NM, USA
- Center for Integrated Nanotechnologies, MPA-CINT, Los Alamos National Laboratory, Los Alamos, NM, USA, Institute for Materials Science, Los Alamos National Laboratory, Los Alamos, NM, USA
- Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, USA
- Department of Physics, Indiana University, Bloomington, IN, USA
- Department of Materials Science, University of Michigan, Ann Arbor, MI, USA
- Publication Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1510117
- Alternate Identifier(s):
- OSTI ID: 1398929
- Report Number(s):
- LA-UR-17-27506
Journal ID: ISSN 2166-3831; 8
- Grant/Contract Number:
- AC52-06NA25396
- Resource Type:
- Published Article
- Journal Name:
- Materials Research Letters
- Additional Journal Information:
- Journal Name: Materials Research Letters Journal Volume: 5 Journal Issue: 6; Journal ID: ISSN 2166-3831
- Publisher:
- Informa UK Limited
- Country of Publication:
- United Kingdom
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; reversible phase transformation; in situ TEM; aluminum nitride; wurtzite; zinc blende
Citation Formats
Li, Zhen, Yadav, Satyesh, Chen, Youxing, Li, Nan, Liu, Xiang-Yang, Wang, Jian, Zhang, Shixiong, Baldwin, Jon Kevin, Misra, Amit, and Mara, Nathan. Mechanically controlling the reversible phase transformation from zinc blende to wurtzite in AlN. United Kingdom: N. p., 2017.
Web. doi:10.1080/21663831.2017.1303793.
Li, Zhen, Yadav, Satyesh, Chen, Youxing, Li, Nan, Liu, Xiang-Yang, Wang, Jian, Zhang, Shixiong, Baldwin, Jon Kevin, Misra, Amit, & Mara, Nathan. Mechanically controlling the reversible phase transformation from zinc blende to wurtzite in AlN. United Kingdom. https://doi.org/10.1080/21663831.2017.1303793
Li, Zhen, Yadav, Satyesh, Chen, Youxing, Li, Nan, Liu, Xiang-Yang, Wang, Jian, Zhang, Shixiong, Baldwin, Jon Kevin, Misra, Amit, and Mara, Nathan. Mon .
"Mechanically controlling the reversible phase transformation from zinc blende to wurtzite in AlN". United Kingdom. https://doi.org/10.1080/21663831.2017.1303793.
@article{osti_1510117,
title = {Mechanically controlling the reversible phase transformation from zinc blende to wurtzite in AlN},
author = {Li, Zhen and Yadav, Satyesh and Chen, Youxing and Li, Nan and Liu, Xiang-Yang and Wang, Jian and Zhang, Shixiong and Baldwin, Jon Kevin and Misra, Amit and Mara, Nathan},
abstractNote = {III–V and other binary octet semiconductors often take two phase forms—wurtzite (wz) and zinc blende (zb) crystal structures—with distinct functional performance at room temperature. Here, we investigate how to control the synthesized phase structure to either wz or zb phase by tuning the interfacial strain by taking AlN as a representative III–V compound. Furthermore, by applying in situ mechanical tests at atomic scale in a transmission electron microscope, we observed the reversible phase transformation from zb to wz, and characterized the transition path—the collective glide of Shockley partials on every two {111} planes of the zb AlN.},
doi = {10.1080/21663831.2017.1303793},
journal = {Materials Research Letters},
number = 6,
volume = 5,
place = {United Kingdom},
year = {Mon Apr 10 00:00:00 EDT 2017},
month = {Mon Apr 10 00:00:00 EDT 2017}
}
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https://doi.org/10.1080/21663831.2017.1303793
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Cited by: 14 works
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Works referenced in this record:
High Resolution Transmission Electron Microscope Observation of Zero-Strain Deformation Twinning Mechanisms in Ag
journal, April 2011
- Liu, L.; Wang, J.; Gong, S. K.
- Physical Review Letters, Vol. 106, Issue 17
Stabilization of zinc-blende cubic AlN in AlN/W superlattices
journal, September 2001
- Kim, I. W.; Madan, A.; Guruz, M. W.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 5
Structural properties of 〈111〉B -oriented III–V nanowires
journal, June 2006
- Johansson, Jonas; Karlsson, Lisa S.; Patrik T. Svensson, C.
- Nature Materials, Vol. 5, Issue 7
Pressure‐induced rocksalt phase of aluminum nitride: A metastable structure at ambient condition
journal, June 1993
- Xia, Qing; Xia, Hui; Ruoff, Arthur L.
- Journal of Applied Physics, Vol. 73, Issue 12
Tribology and oxidation behavior of TiN/AlN nano-multilayer films
journal, April 2006
- Yao, S. H.; Su, Y. L.; Kao, W. H.
- Tribology International, Vol. 39, Issue 4
Wurtzite to Zinc Blende Phase Transition in GaAs Nanowires Induced by Epitaxial Burying
journal, June 2008
- Patriarche, Gilles; Glas, Frank; Tchernycheva, Maria
- Nano Letters, Vol. 8, Issue 6
Optical and structural properties of III-V nitrides under pressure
journal, August 1994
- Christensen, N. E.; Gorczyca, I.
- Physical Review B, Vol. 50, Issue 7
Electronic structure of AlN
journal, October 1986
- Ching, W. Y.; Harmon, B. N.
- Physical Review B, Vol. 34, Issue 8
Shock-Induced Structural Phase Transition, Plasticity, and Brittle Cracks in Aluminum Nitride Ceramic
journal, February 2006
- Branicio, Paulo S.; Kalia, Rajiv K.; Nakano, Aiichiro
- Physical Review Letters, Vol. 96, Issue 6
Nanometre-scale electronics with III–V compound semiconductors
journal, November 2011
- del Alamo, Jesús A.
- Nature, Vol. 479, Issue 7373
Growth of aluminum nitride on (111) silicon: Microstructure and interface structure
journal, February 1998
- Bourret, A.; Barski, A.; Rouvière, J. L.
- Journal of Applied Physics, Vol. 83, Issue 4
Calculated structural phase transitions of aluminum nitride under pressure
journal, February 1993
- Christensen, N. E.; Gorczyca, I.
- Physical Review B, Vol. 47, Issue 8
Dislocation structures of Σ3 {112} twin boundaries in face centered cubic metals
journal, July 2009
- Wang, J.; Anderoglu, O.; Hirth, J. P.
- Applied Physics Letters, Vol. 95, Issue 2
The optical absorption edge of single‐crystal AlN prepared by a close‐spaced vapor process
journal, August 1978
- Perry, P. B.; Rutz, R. F.
- Applied Physics Letters, Vol. 33, Issue 4
X-ray observation of the structural phase transition of aluminum nitride under high pressure
journal, May 1992
- Ueno, M.; Onodera, A.; Shimomura, O.
- Physical Review B, Vol. 45, Issue 17
Group-IV and group-V substitutional impurities in cubic group-III nitrides
journal, August 2003
- Ramos, L. E.; Furthmüller, J.; Leite, J. R.
- Physical Review B, Vol. 68, Issue 8
Microstructure and strengthening mechanisms in Cu/Fe multilayers
journal, October 2012
- Chen, Y.; Liu, Y.; Sun, C.
- Acta Materialia, Vol. 60, Issue 18
First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory
journal, July 2001
- Zoroddu, Agostino; Bernardini, Fabio; Ruggerone, Paolo
- Physical Review B, Vol. 64, Issue 4
Phase Perfection in Zinc Blende and Wurtzite III−V Nanowires Using Basic Growth Parameters
journal, March 2010
- Joyce, Hannah J.; Wong-Leung, Jennifer; Gao, Qiang
- Nano Letters, Vol. 10, Issue 3
Dynamic Process of Phase Transition from Wurtzite to Zinc Blende Structure in InAs Nanowires
journal, November 2013
- Zheng, He; Wang, Jian; Huang, Jian Yu
- Nano Letters, Vol. 13, Issue 12
Elastic, structural, bonding, and defect properties of zinc-blende BN, AlN, GaN, InN and their alloys
journal, March 2002
- Talwar, D. N.; Sofranko, D.; Mooney, C.
- Materials Science and Engineering: B, Vol. 90, Issue 3
Ab initio modeling of zincblende AlN layer in Al-AlN-TiN multilayers
journal, June 2016
- Yadav, S. K.; Wang, J.; Liu, X. -Y.
- Journal of Applied Physics, Vol. 119, Issue 22
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
journal, August 2001
- Cui, Yi; Wei, Qingqiao; Park, Hongkun
- Science, Vol. 293, Issue 5533, p. 1289-1292
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
journal, May 2006
- Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
- Nature, Vol. 441, Issue 7091, p. 325-328
Stabilization of Cubic AlN in Epitaxial AlN/TiN Superlattices
journal, March 1997
- Madan, A.; Kim, I. W.; Cheng, S. C.
- Physical Review Letters, Vol. 78, Issue 9
Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?
journal, October 2007
- Glas, Frank; Harmand, Jean-Christophe; Patriarche, Gilles
- Physical Review Letters, Vol. 99, Issue 14
Growth and Stress-induced Transformation of Zinc blende AlN Layers in Al-AlN-TiN Multilayers
journal, December 2015
- Li, Nan; Yadav, Satyesh K.; Wang, Jian
- Scientific Reports, Vol. 5, Issue 1
Deposition pressure effect on chemical, morphological and optical properties of binary Al-nitrides
journal, June 2015
- Pérez Taborda, Jaime Andrés; Caicedo, J. C.; Grisales, M.
- Optics & Laser Technology, Vol. 69
Ab initio calculation of structural phase transitions in AlN crystal
journal, September 2006
- Siegel, A.; Parlinski, K.; Wdowik, U. D.
- Physical Review B, Vol. 74, Issue 10
High strength Mg/Nb nanolayer composites
journal, February 2011
- Ham, B.; Zhang, X.
- Materials Science and Engineering: A, Vol. 528, Issue 4-5
Controlled polytypic and twin-plane superlattices in iii–v nanowires
journal, November 2008
- Caroff, P.; Dick, K. A.; Johansson, J.
- Nature Nanotechnology, Vol. 4, Issue 1
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
journal, February 2000
- Dietl, T.
- Science, Vol. 287, Issue 5455
High pressure phase transition in aluminium nitride
journal, September 1991
- Gorczyca, I.; Christensen, N. E.; Perlin, P.
- Solid State Communications, Vol. 79, Issue 12
Zinc-blende–wurtzite polytypism in semiconductors
journal, October 1992
- Yeh, Chin-Yu; Lu, Z. W.; Froyen, S.
- Physical Review B, Vol. 46, Issue 16
Observation of a Wurtzite Form of Gallium Arsenide
journal, November 2005
- McMahon, M. I.; Nelmes, R. J.
- Physical Review Letters, Vol. 95, Issue 21
Stacking fault and partial dislocation dominated strengthening mechanisms in highly textured Cu/Co multilayers
journal, October 2013
- Liu, Y.; Chen, Y.; Yu, K. Y.
- International Journal of Plasticity, Vol. 49
Direct Band Gap Wurtzite Gallium Phosphide Nanowires
journal, March 2013
- Assali, S.; Zardo, I.; Plissard, S.
- Nano Letters, Vol. 13, Issue 4
Yield properties, phase transition, and equation of state of aluminum nitride (AlN) under shock compression up to 150 GPa
journal, December 1999
- Mashimo, Tsutomu; Uchino, Masakazu; Nakamura, Akira
- Journal of Applied Physics, Vol. 86, Issue 12
Experimental Quantification of Resolved Shear Stresses for Dislocation Motion in TiN
journal, June 2015
- Li, N.; Misra, A.; Shao, S.
- Nano Letters, Vol. 15, Issue 7
Crystal Structure Control of Zinc-Blende CdSe/CdS Core/Shell Nanocrystals: Synthesis and Structure-Dependent Optical Properties
journal, November 2012
- Nan, Wennuan; Niu, Yuan; Qin, Haiyan
- Journal of the American Chemical Society, Vol. 134, Issue 48
Synthesis of metastable epitaxial zinc‐blende‐structure AlN by solid‐state reaction
journal, May 1992
- Petrov, I.; Mojab, E.; Powell, R. C.
- Applied Physics Letters, Vol. 60, Issue 20
Phase transition of ultrathin AlN interlayer at AlGaN∕GaN interface
journal, March 2007
- Cai, Duanjun; Kang, Junyong
- Applied Physics Letters, Vol. 90, Issue 12
An atomic and probabilistic perspective on twin nucleation in Mg
journal, October 2010
- Wang, J.; Beyerlein, I. J.; Tomé, C. N.
- Scripta Materialia, Vol. 63, Issue 7
A plane-wave pseudopotential study on III V zinc-blende and wurtzite semiconductors under pressure
journal, October 2002
- Wang, S. Q.; Ye, H. Q.
- Journal of Physics: Condensed Matter, Vol. 14, Issue 41
Works referencing / citing this record:
Structure, microhardness and thermal conducting properties of the high-pressure high-temperature-treated Al–Ti–N materials
journal, January 2019
- Kudyakova, V. S.; Chukin, A. V.; Dorokhin, M. V.
- Applied Physics A, Vol. 125, Issue 2
First-principles study of structural phase transformation and dynamical stability of cubic AlN semiconductors
journal, December 2018
- Yaddanapudi, Krishna
- AIP Advances, Vol. 8, Issue 12