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Title: Effective g factor of low-density two-dimensional holes in a Ge quantum well

Abstract

Here we report the measurements of the effective g factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective g factor in a magnetic field perpendicular to the sample surface. Very large values of the effective g factor, ranging from ~13 to ~28, are observed in the density range of 1.4×10 10 cm -2– 1.4×10 11 cm -2. When the magnetic field is oriented parallel to the sample surface, the effective g factor is obtained from a protrusion in the magneto-resistance data that signify full spin polarization. In the latter orientation, a small effective g factor, ~1.3-1.4, is measured in the density range of 1.5×10 10 cm -2–2×10 10 cm -2. Finally, this very strong anisotropy is consistent with theoretical predictions and previous measurements in other 2D hole systems, such as InGaAs and GaSb.

Authors:
ORCiD logo [1];  [2];  [3];  [3];  [3];  [3]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
  3. National Taiwan Univ., Taipei (Taiwan). Dept. of Electrical Engineering and Graduate Inst. of Electronic Engineering; National Nano Device Lab., Hsinchu (Taiwan)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF); Ministry of Science and Technology
OSTI Identifier:
1398779
Alternate Identifier(s):
OSTI ID: 1380047
Report Number(s):
[SAND-2017-9871J]
[Journal ID: ISSN 0003-6951; 656977]
Grant/Contract Number:  
[AC04-94AL85000; NA0003525]
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
[ Journal Volume: 111; Journal Issue: 10]; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; G factor; Quantum wells; Magnetic ordering; Semiconductors; Spintronics

Citation Formats

Lu, T. M., Harris, C. T., Huang, S. -H., Chuang, Y., Li, J. -Y., and Liu, C. W. Effective g factor of low-density two-dimensional holes in a Ge quantum well. United States: N. p., 2017. Web. doi:10.1063/1.4990569.
Lu, T. M., Harris, C. T., Huang, S. -H., Chuang, Y., Li, J. -Y., & Liu, C. W. Effective g factor of low-density two-dimensional holes in a Ge quantum well. United States. doi:10.1063/1.4990569.
Lu, T. M., Harris, C. T., Huang, S. -H., Chuang, Y., Li, J. -Y., and Liu, C. W. Mon . "Effective g factor of low-density two-dimensional holes in a Ge quantum well". United States. doi:10.1063/1.4990569. https://www.osti.gov/servlets/purl/1398779.
@article{osti_1398779,
title = {Effective g factor of low-density two-dimensional holes in a Ge quantum well},
author = {Lu, T. M. and Harris, C. T. and Huang, S. -H. and Chuang, Y. and Li, J. -Y. and Liu, C. W.},
abstractNote = {Here we report the measurements of the effective g factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective g factor in a magnetic field perpendicular to the sample surface. Very large values of the effective g factor, ranging from ~13 to ~28, are observed in the density range of 1.4×1010 cm-2– 1.4×1011 cm-2. When the magnetic field is oriented parallel to the sample surface, the effective g factor is obtained from a protrusion in the magneto-resistance data that signify full spin polarization. In the latter orientation, a small effective g factor, ~1.3-1.4, is measured in the density range of 1.5×1010 cm-2–2×1010 cm-2. Finally, this very strong anisotropy is consistent with theoretical predictions and previous measurements in other 2D hole systems, such as InGaAs and GaSb.},
doi = {10.1063/1.4990569},
journal = {Applied Physics Letters},
number = [10],
volume = [111],
place = {United States},
year = {2017},
month = {9}
}

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