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Title: Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus

Authors:
; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1398744
Grant/Contract Number:  
SC0002623
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 15; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Wang, Dan, Han, Dong, Li, Xian-Bin, Chen, Nian-Ke, West, Damien, Meunier, Vincent, Zhang, Shengbai, and Sun, Hong-Bo. Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.155424.
Wang, Dan, Han, Dong, Li, Xian-Bin, Chen, Nian-Ke, West, Damien, Meunier, Vincent, Zhang, Shengbai, & Sun, Hong-Bo. Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus. United States. doi:10.1103/PhysRevB.96.155424.
Wang, Dan, Han, Dong, Li, Xian-Bin, Chen, Nian-Ke, West, Damien, Meunier, Vincent, Zhang, Shengbai, and Sun, Hong-Bo. Mon . "Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus". United States. doi:10.1103/PhysRevB.96.155424.
@article{osti_1398744,
title = {Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus},
author = {Wang, Dan and Han, Dong and Li, Xian-Bin and Chen, Nian-Ke and West, Damien and Meunier, Vincent and Zhang, Shengbai and Sun, Hong-Bo},
abstractNote = {},
doi = {10.1103/PhysRevB.96.155424},
journal = {Physical Review B},
number = 15,
volume = 96,
place = {United States},
year = {2017},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.96.155424

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Cited by: 4 works
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