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Title: Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus

Authors:
; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
SC0002623
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 15; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1398744

Wang, Dan, Han, Dong, Li, Xian-Bin, Chen, Nian-Ke, West, Damien, Meunier, Vincent, Zhang, Shengbai, and Sun, Hong-Bo. Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus. United States: N. p., Web. doi:10.1103/PhysRevB.96.155424.
Wang, Dan, Han, Dong, Li, Xian-Bin, Chen, Nian-Ke, West, Damien, Meunier, Vincent, Zhang, Shengbai, & Sun, Hong-Bo. Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus. United States. doi:10.1103/PhysRevB.96.155424.
Wang, Dan, Han, Dong, Li, Xian-Bin, Chen, Nian-Ke, West, Damien, Meunier, Vincent, Zhang, Shengbai, and Sun, Hong-Bo. 2017. "Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus". United States. doi:10.1103/PhysRevB.96.155424.
@article{osti_1398744,
title = {Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus},
author = {Wang, Dan and Han, Dong and Li, Xian-Bin and Chen, Nian-Ke and West, Damien and Meunier, Vincent and Zhang, Shengbai and Sun, Hong-Bo},
abstractNote = {},
doi = {10.1103/PhysRevB.96.155424},
journal = {Physical Review B},
number = 15,
volume = 96,
place = {United States},
year = {2017},
month = {10}
}

Works referenced in this record:

Generalized Gradient Approximation Made Simple
journal, October 1996
  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012
  • Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras
  • Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712
  • DOI: 10.1038/nnano.2012.193

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Inhomogeneous Electron Gas
journal, November 1964

Graphene-Like Two-Dimensional Materials
journal, January 2013
  • Xu, Mingsheng; Liang, Tao; Shi, Minmin
  • Chemical Reviews, Vol. 113, Issue 5, p. 3766-3798
  • DOI: 10.1021/cr300263a

Single-layer MoS2 transistors
journal, January 2011
  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

Self-Consistent Equations Including Exchange and Correlation Effects
journal, November 1965