skip to main content

DOE PAGESDOE PAGES

This content will become publicly available on October 9, 2018

Title: Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus

Authors:
; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
SC0002623
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 96; Journal Issue: 15; Related Information: CHORUS Timestamp: 2017-10-09 14:39:11; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1398744