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Title: Interfacial thermal conductance between few to tens of layered-MoS 2 and c-Si: Effect of MoS 2 thickness

Authors:
; ; ; ;
Publication Date:
Grant/Contract Number:
DENE0000671
Type:
Publisher's Accepted Manuscript
Journal Name:
Acta Materialia
Additional Journal Information:
Journal Volume: 122; Journal Issue: C; Related Information: CHORUS Timestamp: 2018-09-07 20:20:49; Journal ID: ISSN 1359-6454
Publisher:
Elsevier
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1398621

Yuan, Pengyu, Li, Chong, Xu, Shen, Liu, Jing, and Wang, Xinwei. Interfacial thermal conductance between few to tens of layered-MoS 2 and c-Si: Effect of MoS 2 thickness. United States: N. p., Web. doi:10.1016/j.actamat.2016.09.045.
Yuan, Pengyu, Li, Chong, Xu, Shen, Liu, Jing, & Wang, Xinwei. Interfacial thermal conductance between few to tens of layered-MoS 2 and c-Si: Effect of MoS 2 thickness. United States. doi:10.1016/j.actamat.2016.09.045.
Yuan, Pengyu, Li, Chong, Xu, Shen, Liu, Jing, and Wang, Xinwei. 2017. "Interfacial thermal conductance between few to tens of layered-MoS 2 and c-Si: Effect of MoS 2 thickness". United States. doi:10.1016/j.actamat.2016.09.045.
@article{osti_1398621,
title = {Interfacial thermal conductance between few to tens of layered-MoS 2 and c-Si: Effect of MoS 2 thickness},
author = {Yuan, Pengyu and Li, Chong and Xu, Shen and Liu, Jing and Wang, Xinwei},
abstractNote = {},
doi = {10.1016/j.actamat.2016.09.045},
journal = {Acta Materialia},
number = C,
volume = 122,
place = {United States},
year = {2017},
month = {1}
}