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Title: Thermally ruggedized ITO transparent electrode films for high power optoelectronics

Here, we present two strategies to minimize laser damage in transparent conductive films. The first consists of improving heat dissipation by selection of substrates with high thermal diffusivity or by addition of capping layer heatsinks. The second is reduction of bulk energy absorption by lowering free carrier density and increasing mobility, while maintaining film conductance with thicker films. Multi-pulse laser damage tests were performed on tin-doped indium oxide (ITO) films configured to improve optical lifetime damage performance. Conditions where improvements were not observed are also described. Finally, when bulk heating is not the dominant damage process, discrete defect-induced damage limits damage behavior.
Authors:
ORCiD logo [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). Physical and Life Sciences and NIF and Photon Sciences
  2. United States Air Force Academy, CO (United States). Department of Mechanical Engineering
Publication Date:
Report Number(s):
LLNL-JRNL-737685
Journal ID: ISSN 1094-4087; OPEXFF
Grant/Contract Number:
AC52-07NA27344; 15-ERD-057
Type:
Published Article
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 25; Journal Issue: 21; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America (OSA)
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; Lasers and laser optics; Laser materials; Laser damage; Optics at surfaces
OSTI Identifier:
1398300
Alternate Identifier(s):
OSTI ID: 1406438

Yoo, Jae-Hyuck, Matthews, Manyalibo, Ramsey, Phil, Barrios, Antonio Correa, Carter, Austin, Lange, Andrew, Bude, Jeff, and Elhadj, Selim. Thermally ruggedized ITO transparent electrode films for high power optoelectronics. United States: N. p., Web. doi:10.1364/OE.25.025533.
Yoo, Jae-Hyuck, Matthews, Manyalibo, Ramsey, Phil, Barrios, Antonio Correa, Carter, Austin, Lange, Andrew, Bude, Jeff, & Elhadj, Selim. Thermally ruggedized ITO transparent electrode films for high power optoelectronics. United States. doi:10.1364/OE.25.025533.
Yoo, Jae-Hyuck, Matthews, Manyalibo, Ramsey, Phil, Barrios, Antonio Correa, Carter, Austin, Lange, Andrew, Bude, Jeff, and Elhadj, Selim. 2017. "Thermally ruggedized ITO transparent electrode films for high power optoelectronics". United States. doi:10.1364/OE.25.025533.
@article{osti_1398300,
title = {Thermally ruggedized ITO transparent electrode films for high power optoelectronics},
author = {Yoo, Jae-Hyuck and Matthews, Manyalibo and Ramsey, Phil and Barrios, Antonio Correa and Carter, Austin and Lange, Andrew and Bude, Jeff and Elhadj, Selim},
abstractNote = {Here, we present two strategies to minimize laser damage in transparent conductive films. The first consists of improving heat dissipation by selection of substrates with high thermal diffusivity or by addition of capping layer heatsinks. The second is reduction of bulk energy absorption by lowering free carrier density and increasing mobility, while maintaining film conductance with thicker films. Multi-pulse laser damage tests were performed on tin-doped indium oxide (ITO) films configured to improve optical lifetime damage performance. Conditions where improvements were not observed are also described. Finally, when bulk heating is not the dominant damage process, discrete defect-induced damage limits damage behavior.},
doi = {10.1364/OE.25.025533},
journal = {Optics Express},
number = 21,
volume = 25,
place = {United States},
year = {2017},
month = {10}
}