skip to main content


This content will become publicly available on August 28, 2018

Title: Structural and electrical properties of single crystalline SrZrO 3 epitaxially grown on Ge (001)

Here, we present structural and electrical characterization of SrZrO 3 that has been epitaxially grown on Ge(001) by oxide molecular beam epitaxy. Single crystalline SrZrO 3 can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 ºC in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO 3 exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.65 eV, respectively. As a standalone film, SrZrO 3 exhibits several characteristics that are ideal for applications as a gate dielectric on Ge. We find that 4 nm thick films exhibit low leakage current densities, and a dielectric constant of κ ~ 25 that corresponds to an equivalent oxide thickness of 0.70 nm.
 [1] ;  [1] ;  [2] ; ORCiD logo [3] ;  [3] ;  [1] ;  [2] ;  [3] ;  [1]
  1. Univ. of Texas, Arlington, TX (United States)
  2. North Carolina State Univ., Raleigh, NC (United States)
  3. Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 0021-8979; 49306; KC0203020
Grant/Contract Number:
AC05-76RL01830; 10122
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 8; Journal ID: ISSN 0021-8979
American Institute of Physics (AIP)
Research Org:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
Sponsoring Org:
Country of Publication:
United States
74 ATOMIC AND MOLECULAR PHYSICS; Environmental Molecular Sciences Laboratory
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1377670