Metastable defect response in CZTSSe from admittance spectroscopy

Koeper, Mark J.; Hages, Charles J.; Li, Jian V.; Levi, Dean; Agrawal, Rakesh

doi:10.1063/1.4996283

Title: Metastable defect response in CZTSSe from admittance spectroscopy

Abstract

Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se)₄ where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the device measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.

Authors:

Koeper, Mark J. ^[1]; Hages, Charles J. ^[2]; Li, Jian V. ^[3]; Levi, Dean ^[4]; Agrawal, Rakesh ^[1]

Purdue Univ., West Lafayette, IN (United States)
Helmholtz-Zentrum Berlin (HZB), (Germany)
Texas State Univ., San Marco, TX (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: Mon Oct 02 00:00:00 EDT 2017

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1405282

Alternate Identifier(s):: OSTI ID: 1398122

Report Number(s):: NREL/JA-5J00-70373
Journal ID: ISSN 0003-6951

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 111; Journal Issue: 14; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; spectroscopy; garnet; activation energies; chemical kinetics; dielectrics

Citation Formats


                    Koeper, Mark J., Hages, Charles J., Li, Jian V., Levi, Dean, and Agrawal, Rakesh. Metastable defect response in CZTSSe from admittance spectroscopy.  United States: N. p., 2017. 
Web.  doi:10.1063/1.4996283.

Copy to clipboard


                    Koeper, Mark J., Hages, Charles J., Li, Jian V., Levi, Dean, & Agrawal, Rakesh. Metastable defect response in CZTSSe from admittance spectroscopy.  United States.  https://doi.org/10.1063/1.4996283

Copy to clipboard


                    Koeper, Mark J., Hages, Charles J., Li, Jian V., Levi, Dean, and Agrawal, Rakesh. Mon .  
"Metastable defect response in CZTSSe from admittance spectroscopy".  United States.  https://doi.org/10.1063/1.4996283.  https://www.osti.gov/servlets/purl/1405282.

Copy to clipboard


                    
@article{osti_1405282,

  title        = {Metastable defect response in CZTSSe from admittance spectroscopy},

  author       = {Koeper, Mark J. and Hages, Charles J. and Li, Jian V. and Levi, Dean and Agrawal, Rakesh},

  abstractNote = {Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se)4 where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the device measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.},

  doi          = {10.1063/1.4996283},

  journal      = {Applied Physics Letters},

  number       = 14,

  volume       = 111,

  place        = {United States},

  year         = {Mon Oct 02 00:00:00 EDT 2017},

  month        = {Mon Oct 02 00:00:00 EDT 2017}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1063/1.4996283

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 15 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Electronic properties of the Cu ₂ ZnSn(Se,S) ₄ absorber layer in solar cells as revealed by admittance spectroscopy and related methods
journal, June 2012

Gunawan, Oki; Gokmen, Tayfun; Warren, Charles W.
Applied Physics Letters, Vol. 100, Issue 25
DOI: 10.1063/1.4729751

9.0% efficient Cu ₂ ZnSn(S,Se) ₄ solar cells from selenized nanoparticle inks : 9.2% efficient Cu
journal, February 2014

Miskin, Caleb K.; Yang, Wei-Chang; Hages, Charles J.
Progress in Photovoltaics: Research and Applications, Vol. 23, Issue 5
DOI: 10.1002/pip.2472

Characterization of metastabilities in Cu(In,Ga)Se ₂ thin-film solar cells by capacitance and current-voltage spectroscopy
journal, November 2011

Eisenbarth, Tobias; Caballero, Raquel; Nichterwitz, Melanie
Journal of Applied Physics, Vol. 110, Issue 9
DOI: 10.1063/1.3656453

Characterization of nanocrystal-ink based CZTSSe and CIGSSe solar cells using voltage-dependent admittance spectroscopy
conference, June 2014

Sun, Xingshu; Hages, Charles J.; Carter, Nathaniel J.
2014 IEEE 40th Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
DOI: 10.1109/PVSC.2014.6925415

Direct Evaluation of Defect Distributions From Admittance Spectroscopy
journal, November 2014

Weiss, Thomas Paul; Redinger, Alex; Regesch, David
IEEE Journal of Photovoltaics, Vol. 4, Issue 6
DOI: 10.1109/JPHOTOV.2014.2358073

Generalized quantum efficiency analysis for non-ideal solar cells: Case of Cu ₂ ZnSnSe ₄
journal, January 2016

Hages, Charles J.; Carter, Nathaniel J.; Agrawal, Rakesh
Journal of Applied Physics, Vol. 119, Issue 1
DOI: 10.1063/1.4939487

Deep Defects in ${Cu}_{2} ZnSn {(S, Se)}_{4}$ Solar Cells with Varying Se Content
journal, February 2016

Levcenko, S.; Just, J.; Redinger, A.
Physical Review Applied, Vol. 5, Issue 2
DOI: 10.1103/PhysRevApplied.5.024004

Kesterite Thin-Film Solar Cells: Advances in Materials Modelling of Cu2ZnSnS4
journal, March 2012

Walsh, Aron; Chen, Shiyou; Wei, Su-Huai
Advanced Energy Materials, Vol. 2, Issue 4
DOI: 10.1002/aenm.201100630

Effects of sodium incorporation in Co-evaporated Cu ₂ ZnSnSe ₄ thin-film solar cells
journal, April 2013

Li, Jian V.; Kuciauskas, Darius; Young, Matthew R.
Applied Physics Letters, Vol. 102, Issue 16
DOI: 10.1063/1.4802972

Meyer–Neldel behavior of deep level parameters in heterojunctions to Cu(In,Ga)(S,Se) ₂
journal, November 1996

Herberholz, R.; Walter, T.; Müller, C.
Applied Physics Letters, Vol. 69, Issue 19
DOI: 10.1063/1.117352

Device comparison of champion nanocrystal-ink based CZTSSe and CIGSSe solar cells: Capacitance spectroscopy
conference, June 2013

Hages, Charles J.; Carter, Nathaniel J.; Moore, James
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)
DOI: 10.1109/PVSC.2013.6744856

Experimental evidence of light soaking effect in Cd-free Cu2ZnSn(S,Se)4-based solar cells
journal, August 2014

Grenet, Louis; Grondin, Pauline; Coumert, Karol
Thin Solid Films, Vol. 564
DOI: 10.1016/j.tsf.2014.05.033

Intragrain charge transport in kesterite thin films—Limits arising from carrier localization
journal, November 2016

Hempel, Hannes; Redinger, Alex; Repins, Ingrid
Journal of Applied Physics, Vol. 120, Issue 17
DOI: 10.1063/1.4965868

The metastable changes of the trap spectra of CuInSe ₂ ‐based photovoltaic devices
journal, November 1996

Igalson, M.; Schock, H. W.
Journal of Applied Physics, Vol. 80, Issue 10
DOI: 10.1063/1.363631

Mos Conductance Technique for Measuring Surface State Parameters
journal, October 1965

Nicollian, E. H.; Goetzberger, A.
Applied Physics Letters, Vol. 7, Issue 8
DOI: 10.1063/1.1754385

Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se ₂ based heterojunctions
journal, October 1996

Walter, T.; Herberholz, R.; Müller, C.
Journal of Applied Physics, Vol. 80, Issue 8
DOI: 10.1063/1.363401

Device limitations and light-soaking effects in CZTSSe and CZTGeSSe
conference, June 2012

Hages, Charles J.; Moore, James; Dongaonkar, Sourabh
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE Photovoltaic Specialists Conference
DOI: 10.1109/PVSC.2012.6318142

Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials
journal, May 2017

Hages, Charles J.; Redinger, Alex; Levcenko, Sergiu
Advanced Energy Materials, Vol. 7, Issue 18
DOI: 10.1002/aenm.201700167

The path towards a high-performance solution-processed kesterite solar cell
journal, June 2011

Mitzi, David B.; Gunawan, Oki; Todorov, Teodor K.
Solar Energy Materials and Solar Cells, Vol. 95, Issue 6, p. 1421-1436
DOI: 10.1016/j.solmat.2010.11.028

Defect distributions in thin film solar cells deduced from admittance measurements under different bias voltages
journal, September 2011

Decock, Koen; Khelifi, Samira; Buecheler, Stephan
Journal of Applied Physics, Vol. 110, Issue 6
DOI: 10.1063/1.3641987

Bulk and metastable defects in CuIn1−xGaxSe2 thin films using drive-level capacitance profiling
journal, February 2004

Heath, Jennifer T.; Cohen, J. David; Shafarman, William N.
Journal of Applied Physics, Vol. 95, Issue 3
DOI: 10.1063/1.1633982

Works referencing / citing this record:

Influences of buffer material and fabrication atmosphere on the electrical properties of CdTe solar cells
journal, September 2019

Awni, Rasha A.; Li, Deng‐Bing; Song, Zhaoning
Progress in Photovoltaics: Research and Applications, Vol. 27, Issue 12
DOI: 10.1002/pip.3192

The Effects of Hydrogen Iodide Back Surface Treatment on CdTe Solar Cells
journal, January 2019

Awni, Rasha A.; Li, Deng-Bing; Grice, Corey R.
Solar RRL, Vol. 3, Issue 3
DOI: 10.1002/solr.201800304

The electrical and optical properties of kesterites
journal, August 2019

Grossberg, Maarja; Krustok, Jüri; Hages, Charles J.
Journal of Physics: Energy, Vol. 1, Issue 4
DOI: 10.1088/2515-7655/ab29a0

Similar Records in DOE PAGES and OSTI.GOV collections:

Admittance Spectroscopy in CZTSSe: Metastability Behavior and Voltage Dependent Defect Study

Conference Koeper, Mark J. ; Hages, Charles J. ; Li, Jian V. ; ... - Conference Record of the IEEE Photovoltaic Specialists Conference

Admittance spectroscopy has been performed on a CZTSSe device with a carrier injection pretreatment and under electronically relaxed conditions to demonstrate metastability behavior. We show that the measurements with the carrier injection pretreatment demonstrate two admittance signatures while the relaxed measurement demonstrates only one admittance signature with a different activation energy. Additionally, voltage dependent admittance spectroscopy was performed using the carrier injection pretreatment method at each of the applied voltage bias. The activation energies of the two admittance signatures were calculated and are shown to be independent of the voltage bias.
https://doi.org/10.1109/PVSC.2016.7750025
Comparison and Interpretation of Admittance Spectroscopy and Deep Level Transient Spectroscopy from Co-Evaporated and Solution-Deposited Cu2ZnSn(Sx, Se1-x)4 Solar Cells

Conference Caruso, A. E. ; Lund, E. A. ; Kosyak, V. ; ...

Cu2ZnSn(S, Se)4 (CZTSe) is an earth-abundant semiconductor with potential for economical thin-film photovoltaic devices. Short minority carrier lifetimes contribute to low open circuit voltage and efficiency. Deep level defects that may contribute to lower minority carrier lifetimes in kesterites have been theoretically predicted, however very little experimental characterization of these deep defects exists. In this work we use admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) to characterize devices built using CZTSSe absorber layers deposited via both coevaporation and solution processing. AS reveals a band of widely-distributed activation energies for traps or energy barriers for transport, especially in themore »« less
https://doi.org/10.1109/PVSC.2016.7750218
Minority Carrier Electron Traps in CZTSSe Solar Cells Characterized by DLTS and DLOS

Conference Kheraj, V. ; Lund, E. A. ; Caruso, A. E. ; ...

We report observations of minority carrier interactions with deep levels in 6-8% efficient Cu2ZnSn(S, Se)4 (CZTSSe) devices using conventional and minority deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS). Directly observing defect interactions with minority carriers is critical to understanding the recombination impact of deep levels. In devices with Cu2ZnSn(S, Se)4 nanoparticle ink absorber layers we identify a mid-gap state capturing and emitting minority electrons. It is 590+/-50 meV from the conduction band mobility edge, has a concentration near 1015/cm3, and has an apparent electron capture cross section ~10-14 cm2. We conclude that, while energetically positioned nearly-ideallymore »« less
https://doi.org/10.1109/PVSC.2016.7750024
Defect distribution and metastability in chalcopyrite semiconductors

Conference Walter, T ; Herberholz, R ; Mueller, C ; ...

Deep levels in chalcopyrite based heterojunctions are investigated by capacitance techniques. A method is presented which allows the determination of defect distributions from admittance measurements. For CuInSe{sub 2} a defect level at 280 meV above the valence band with an attempt to escape frequency of about 10{sup 11} s{sup {minus}1} is detected. A characteristic defect structure consisting of a shallow defect level and a broad deep structure is observed for Cu(In,Ga)Se{sub 2}. The depth of the shallow defect level and a broad deep structure is observed for Cu(In,Ga)Se{sub 2}. The depth of the shallow defect is affected by annealing treatmentsmore »« less
Study of charge transport properties in a ZnO/CdS/Cu(In,Ga)Se₂ solar cell via admittance spectroscopy

Journal Article Paul, Sanjoy ; Lopez, Roberto ; Repins, Ingrid L. ; ... - Journal of Vacuum Science and Technology B

We investigate the charge carrier transport properties in a thin-film heterojunction Cu(In,Ga)Se2 (CIGS) solar cell device via coordinated capacitance-voltage and admittance spectroscopic measurements. The CIGS absorber width was measured using temperature dependent depletion width in the freeze-out regime and its acceptor density extracted from conventional capacitance-voltage analysis in the non-freeze-out regime. The bias-dependent modified dielectric relaxation in the Cu(In,Ga)Se2 solar cell was exploited to extract the absorber’s resistivity, hole mobility, and their temperature dependency, all by admittance spectroscopy. In the temperature range of 133 – 300 K, the extracted hole mobility in the CIGS device increases from 7.55 × 10-3more »« less
Cited by 13
https://doi.org/10.1116/1.5013046

Full Text Available

Similar Records

Title: Metastable defect response in CZTSSe from admittance spectroscopy

Abstract

Citation Formats

Electronic properties of the Cu 2 ZnSn(Se,S) 4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods journal, June 2012

9.0% efficient Cu 2 ZnSn(S,Se) 4 solar cells from selenized nanoparticle inks : 9.2% efficient Cu journal, February 2014

Characterization of metastabilities in Cu(In,Ga)Se 2 thin-film solar cells by capacitance and current-voltage spectroscopy journal, November 2011

Characterization of nanocrystal-ink based CZTSSe and CIGSSe solar cells using voltage-dependent admittance spectroscopy conference, June 2014

Direct Evaluation of Defect Distributions From Admittance Spectroscopy journal, November 2014

Generalized quantum efficiency analysis for non-ideal solar cells: Case of Cu 2 ZnSnSe 4 journal, January 2016

Deep Defects in Cu 2 ZnSn ( S , Se ) 4 Solar Cells with Varying Se Content journal, February 2016

Kesterite Thin-Film Solar Cells: Advances in Materials Modelling of Cu2ZnSnS4 journal, March 2012

Effects of sodium incorporation in Co-evaporated Cu 2 ZnSnSe 4 thin-film solar cells journal, April 2013

Meyer–Neldel behavior of deep level parameters in heterojunctions to Cu(In,Ga)(S,Se) 2 journal, November 1996

Device comparison of champion nanocrystal-ink based CZTSSe and CIGSSe solar cells: Capacitance spectroscopy conference, June 2013

Experimental evidence of light soaking effect in Cd-free Cu2ZnSn(S,Se)4-based solar cells journal, August 2014

Intragrain charge transport in kesterite thin films—Limits arising from carrier localization journal, November 2016

The metastable changes of the trap spectra of CuInSe 2 ‐based photovoltaic devices journal, November 1996

Mos Conductance Technique for Measuring Surface State Parameters journal, October 1965

Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se 2 based heterojunctions journal, October 1996

Device limitations and light-soaking effects in CZTSSe and CZTGeSSe conference, June 2012

Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials journal, May 2017

The path towards a high-performance solution-processed kesterite solar cell journal, June 2011

Defect distributions in thin film solar cells deduced from admittance measurements under different bias voltages journal, September 2011

Bulk and metastable defects in CuIn1−xGaxSe2 thin films using drive-level capacitance profiling journal, February 2004

Influences of buffer material and fabrication atmosphere on the electrical properties of CdTe solar cells journal, September 2019

The Effects of Hydrogen Iodide Back Surface Treatment on CdTe Solar Cells journal, January 2019

The electrical and optical properties of kesterites journal, August 2019

Electronic properties of the Cu ₂ ZnSn(Se,S) ₄ absorber layer in solar cells as revealed by admittance spectroscopy and related methods
journal, June 2012

9.0% efficient Cu ₂ ZnSn(S,Se) ₄ solar cells from selenized nanoparticle inks : 9.2% efficient Cu
journal, February 2014

Characterization of metastabilities in Cu(In,Ga)Se ₂ thin-film solar cells by capacitance and current-voltage spectroscopy
journal, November 2011

Characterization of nanocrystal-ink based CZTSSe and CIGSSe solar cells using voltage-dependent admittance spectroscopy
conference, June 2014

Direct Evaluation of Defect Distributions From Admittance Spectroscopy
journal, November 2014

Generalized quantum efficiency analysis for non-ideal solar cells: Case of Cu ₂ ZnSnSe ₄
journal, January 2016

Deep Defects in ${Cu}_{2} ZnSn {(S, Se)}_{4}$ Solar Cells with Varying Se Content
journal, February 2016

Kesterite Thin-Film Solar Cells: Advances in Materials Modelling of Cu2ZnSnS4
journal, March 2012

Effects of sodium incorporation in Co-evaporated Cu ₂ ZnSnSe ₄ thin-film solar cells
journal, April 2013

Meyer–Neldel behavior of deep level parameters in heterojunctions to Cu(In,Ga)(S,Se) ₂
journal, November 1996

Device comparison of champion nanocrystal-ink based CZTSSe and CIGSSe solar cells: Capacitance spectroscopy
conference, June 2013

Experimental evidence of light soaking effect in Cd-free Cu2ZnSn(S,Se)4-based solar cells
journal, August 2014

Intragrain charge transport in kesterite thin films—Limits arising from carrier localization
journal, November 2016

The metastable changes of the trap spectra of CuInSe ₂ ‐based photovoltaic devices
journal, November 1996

Mos Conductance Technique for Measuring Surface State Parameters
journal, October 1965

Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se ₂ based heterojunctions
journal, October 1996

Device limitations and light-soaking effects in CZTSSe and CZTGeSSe
conference, June 2012

Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials
journal, May 2017

The path towards a high-performance solution-processed kesterite solar cell
journal, June 2011

Defect distributions in thin film solar cells deduced from admittance measurements under different bias voltages
journal, September 2011

Bulk and metastable defects in CuIn1−xGaxSe2 thin films using drive-level capacitance profiling
journal, February 2004

Influences of buffer material and fabrication atmosphere on the electrical properties of CdTe solar cells
journal, September 2019

The Effects of Hydrogen Iodide Back Surface Treatment on CdTe Solar Cells
journal, January 2019

The electrical and optical properties of kesterites
journal, August 2019