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Title: Hole trapping in amorphous HfO 2 and Al 2 O 3 as a source of positive charging

Authors:
; ; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Microelectronic Engineering
Additional Journal Information:
Journal Volume: 178; Journal Issue: C; Related Information: CHORUS Timestamp: 2018-09-01 20:00:07; Journal ID: ISSN 0167-9317
Publisher:
Elsevier
Sponsoring Org:
USDOE
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1397659

Strand, Jack, Dicks, Oliver A., Kaviani, Moloud, and Shluger, Alexander L.. Hole trapping in amorphous HfO 2 and Al 2 O 3 as a source of positive charging. Netherlands: N. p., Web. doi:10.1016/j.mee.2017.05.012.
Strand, Jack, Dicks, Oliver A., Kaviani, Moloud, & Shluger, Alexander L.. Hole trapping in amorphous HfO 2 and Al 2 O 3 as a source of positive charging. Netherlands. doi:10.1016/j.mee.2017.05.012.
Strand, Jack, Dicks, Oliver A., Kaviani, Moloud, and Shluger, Alexander L.. 2017. "Hole trapping in amorphous HfO 2 and Al 2 O 3 as a source of positive charging". Netherlands. doi:10.1016/j.mee.2017.05.012.
@article{osti_1397659,
title = {Hole trapping in amorphous HfO 2 and Al 2 O 3 as a source of positive charging},
author = {Strand, Jack and Dicks, Oliver A. and Kaviani, Moloud and Shluger, Alexander L.},
abstractNote = {},
doi = {10.1016/j.mee.2017.05.012},
journal = {Microelectronic Engineering},
number = C,
volume = 178,
place = {Netherlands},
year = {2017},
month = {6}
}